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22 Jul 2002

Volume 81, Issue 4, pp. 571-782

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Bias effect on the growth of carbon nanotips using microwave plasma chemical vapor deposition

C. L. Tsai, C. F. Chen, and L. K. Wu

Appl. Phys. Lett. 81, 721 (2002); http://dx.doi.org/10.1063/1.1494839 (3 pages) | Cited 25 times

Online Publication Date: 16 July 2002

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Carbon nanotips with a high-aspect ratio were directly grown on Pt films. Carbon nanotips grew up to 5.4 μm length and 64 nm diameter under a −120 V bias. Compared to the hollow structure of carbon nanotubes, transmission electron microscopy images indicate its solid body, which is made of graphite. Carbon nanotips possess good field emission characteristics, that is, a turn-on field of 1.5 V/μm and 761 μA/cm2 under 2.2 V/μm. The Pt films provide a good conduction path for electron transport from the cathode to the emission site and do not act as catalysts. © 2002 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials
79.70.+q Field emission, ionization, evaporation, and desorption

Nanorheology measurement on a single polymer chain

Yasuhiro Sakai, Takayuki Ikehara, Toshio Nishi, Ken Nakajima, and Masahiko Hara

Appl. Phys. Lett. 81, 724 (2002); http://dx.doi.org/10.1063/1.1494862 (3 pages) | Cited 17 times

Online Publication Date: 16 July 2002

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The mechanical properties of a single chain of a synthesized polystyrene were measured by atomic force microscopy (AFM). In the conventional force-distance curve measurement, the stress-strain behavior of a chain was obtained. We also measured the dynamic sinusoidal response, as in macroscopic rheological studies, repeatedly at several extension lengths before full stretching or rupturing, by a “nanorheology AFM” that we constructed. It enabled us to design any required movements on a z-piezoelectric scanner, especially sinusoidal movements. The rheological properties of a single polymer chain were discussed from the frequency-dependent measurement. © 2002 American Institute of Physics.
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83.80.Rs Polymer solutions
46.35.+z Viscoelasticity, plasticity, viscoplasticity
83.60.Bc Linear viscoelasticity
62.10.+s Mechanical properties of liquids
07.79.Lh Atomic force microscopes
61.25.H- Macromolecular and polymers solutions; polymer melts

Experimental studies of the electron–phonon interaction in InGaAs quantum wires

T. Sugaya, J. P. Bird, D. K. Ferry, A. Sergeev, V. Mitin, K.-Y. Jang, M. Ogura, and Y. Sugiyama

Appl. Phys. Lett. 81, 727 (2002); http://dx.doi.org/10.1063/1.1495089 (3 pages) | Cited 11 times

Online Publication Date: 16 July 2002

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Electron-heating measurements are used to compare the form of the electron–phonon interaction in two-dimensional, and quasi-one-dimensional, InGaAs quantum wires. Evidence for a strongly enhanced interaction is found in the quasi-one-dimensional wire, and is suggested to result from the presence of the singularities in its electronic density of states. The Bloch–Gruneisen criterion is easily violated in this wire, and its energy-loss function is found to show a weak temperature dependence, which is argued to result from a saturation of scattering processes in the uppermost one-dimensional subband. © 2002 American Institute of Physics.
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73.21.Hb Quantum wires
81.07.Vb Quantum wires
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions
73.20.At Surface states, band structure, electron density of states

Fabrication of nanoscale gaps in integrated circuits

Roman Krahne, Amir Yacoby, Hadas Shtrikman, Israel Bar-Joseph, Tali Dadosh, and Joseph Sperling

Appl. Phys. Lett. 81, 730 (2002); http://dx.doi.org/10.1063/1.1495080 (3 pages) | Cited 32 times

Online Publication Date: 16 July 2002

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Nanosize objects such as metal clusters present an ideal system for the study of quantum phenomena and for the construction of practical quantum devices. Integrating these small objects in a macroscopic circuit is, however, a difficult task. So far, nanoparticles have been contacted and addressed by highly sophisticated techniques not suitable for large-scale integration in macroscopic circuits. We present an optical lithography method that allows for the fabrication of a network of electrodes separated by gaps of controlled nanometer size. The main idea is to control the gap size with subnanometer precision using a structure grown by molecular-beam epitaxy. © 2002 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Sz Deposition technology

Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

Anri Nakajima, Yuhei Ito, and Shin Yokoyama

Appl. Phys. Lett. 81, 733 (2002); http://dx.doi.org/10.1063/1.1492318 (3 pages) | Cited 9 times

Online Publication Date: 16 July 2002

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Uniformly doped Si single-electron transistors consisting of a one-dimensional regular array of multiple tunnel junctions (MTJs) and islands have been fabricated. The Coulomb blockade effect is found to play an important role in carrier conduction in the MTJ system at low temperatures (6 K). The conduction mechanism can be interpreted well by considering soliton. The soliton extends less than three islands in our MTJs, and the energy of a single soliton is found to be 0.024 eV from an analysis of low-temperature current–voltage characteristics. For high-temperature operation, it is effective to reduce the parasitic capacitance of each island, which leads to an increase in soliton length. © 2002 American Institute of Physics.
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85.35.Gv Single electron devices
73.23.Hk Coulomb blockade; single-electron tunneling
81.05.Cy Elemental semiconductors
85.35.Ds Quantum interference devices
73.61.Cw Elemental semiconductors

Tuning the electronic behavior of Au nanoparticles with capping molecules

P. Zhang and T. K. Sham

Appl. Phys. Lett. 81, 736 (2002); http://dx.doi.org/10.1063/1.1494120 (3 pages) | Cited 57 times

Online Publication Date: 16 July 2002

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The electronic behavior of gold nanoparticles (NPs) of ∼ 2 nm capped with dendrimer and thiol molecules was studied with Au L3,2-edge x-ray absorption near-edge structure (XANES). The results reveal the tunability of the d-electron distribution in the Au NPs by selective capping. That is, that the Au atoms in the NPs gain 5d electrons (relative to the bulk) when capped with weakly interacting dendrimers and lose 5d electrons when capped with strongly interacting thiol molecules. A semiquantitative analysis of the d-charge (holes) distribution is presented. This work demonstrates the important role of the capping molecules in the d-charge distribution of Au NPs and the usefulness of XANES in probing the electronic behavior of transition metal NPs. © 2002 American Institute of Physics.
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73.22.Lp Collective excitations
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.70.Dm X-ray absorption spectra

High-purity carbon nanotubes synthesis method by an arc discharging in magnetic field

Kazunori Anazawa, Kei Shimotani, Chikara Manabe, Hiroyuki Watanabe, and Masaaki Shimizu

Appl. Phys. Lett. 81, 739 (2002); http://dx.doi.org/10.1063/1.1491302 (3 pages) | Cited 27 times

Online Publication Date: 16 July 2002

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We developed a synthesis method of multiwalled carbon nanotubes (MWNTs), in which an arc discharging was controlled by a magnetic field. Using this method, we can obtain high-purity MWNTs (purity >95%) without purification which disorders walls of MWNTs. The current–voltage measurements show that the carriers would transport ballistically through our defect-free MWNTs with the maximum current density of ∼ 1011 A/m2. Therefore, our method provides defect-free/high-purity MWNTs as nanosized electric wires for device fabrication. © 2002 American Institute of Physics.
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81.07.De Nanotubes
81.15.Rs Spray coating techniques
73.63.Fg Nanotubes
52.77.Fv High-pressure, high-current plasmas (plasma spray, arc welding, etc.)
61.46.-w Structure of nanoscale materials

Growth of low-dimensional magnetic nanostructures on an insulator

Zheng Gai, G. A. Farnan, J. P. Pierce, and J. Shen

Appl. Phys. Lett. 81, 742 (2002); http://dx.doi.org/10.1063/1.1495085 (3 pages) | Cited 18 times

Online Publication Date: 16 July 2002

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Iron nanometer-scaled wires and ultrathin films have been successfully prepared on an insulating NaCl(001) single-crystal surface by electron beam deposition using different growth conditions. In situ noncontact atomic force microscopy (NC-AFM) shows that the heights and widths of the wires, which are formed by a one-dimensional array of clusters aligned on top of the step edges, are very uniform. The films are atomically flat and are formed due to a high nucleation density achieved through a low temperature growth procedure. © 2002 American Institute of Physics.
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75.75.-c Magnetic properties of nanostructures
61.46.-w Structure of nanoscale materials
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Tungsten nanowires and their field electron emission properties

Yun-Hi Lee, Chang-Hoon Choi, Yoon-Taek Jang, Eun-Kyu Kim, Byeong-Kwon Ju, Nam-Ki Min, and Jin-Ho Ahn

Appl. Phys. Lett. 81, 745 (2002); http://dx.doi.org/10.1063/1.1490625 (3 pages) | Cited 81 times

Online Publication Date: 16 July 2002

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We report the fabrication of tungsten nanowires, by simple thermal treatment of W films, that behave as self-catalytic layers and their excellent electron field emission properties as well. The obtained nanowires have a diameter ranging from 10 to 50 nm, showing perfect straightness and neat appearance. Typical turn-on field for the electron emission is about 5 V/μm, and the field enhancement factor β becomes 38 256, which is very close to that of the high efficient single-wall carbon nanotube emitters. The most exciting result is the possibility of easy fabrication of perfectly straight nanowires as promising building blocks for terabit-level interconnection and nanomachine components without the intentional use of any heterogeneous catalysts. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Giant exciton-light coupling in ZnO quantum dots

Bernard Gil and Alexey V. Kavokin

Appl. Phys. Lett. 81, 748 (2002); http://dx.doi.org/10.1063/1.1494864 (3 pages) | Cited 46 times

Online Publication Date: 16 July 2002

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We investigate the strength of the coupling of the electronic states with the electromagnetic field in ZnO nanospheres, taking into account the retardation effect. We show that the coupling strength is particularly strong: the bulk properties are so enhanced that the radiative decay time can reach some 200 ps for quantum dot sizes of some 30 nm. © 2002 American Institute of Physics.
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71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.21.La Quantum dots
78.67.Hc Quantum dots
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.22.Dj Single particle states

Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

J. D. R. Buchanan, T. P. A. Hase, B. K. Tanner, N. D. Hughes, and R. J. Hicken

Appl. Phys. Lett. 81, 751 (2002); http://dx.doi.org/10.1063/1.1496131 (3 pages) | Cited 23 times

Online Publication Date: 16 July 2002

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The barrier thickness in magnetic spin-dependent tunnel junctions with Al2O3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al2O3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density–voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness. © 2002 American Institute of Physics.
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72.25.Mk Spin transport through interfaces
73.40.Rw Metal-insulator-metal structures
85.75.Mm Spin polarized resonant tunnel junctions
73.40.Gk Tunneling
75.45.+j Macroscopic quantum phenomena in magnetic systems
68.55.-a Thin film structure and morphology
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
73.61.Ng Insulators
68.35.Ct Interface structure and roughness
68.65.Ac Multilayers
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Sergei V. Kalinin, Dawn A. Bonnell, Marcus Freitag, and A. T. Johnson

Appl. Phys. Lett. 81, 754 (2002); http://dx.doi.org/10.1063/1.1496129 (3 pages) | Cited 14 times

Online Publication Date: 16 July 2002

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Scanning surface potential microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip–surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies. Based on experimental observations, an analytical form for the differential tip–surface capacitance is obtained. © 2002 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
81.07.De Nanotubes
06.20.F- Units and standards

Formation of ZnO nanostructures by a simple way of thermal evaporation

B. D. Yao, Y. F. Chan, and N. Wang

Appl. Phys. Lett. 81, 757 (2002); http://dx.doi.org/10.1063/1.1495878 (3 pages) | Cited 348 times

Online Publication Date: 16 July 2002

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Mass production of ZnO nanowires, nanoribbons, and needle-like rods has been achieved by a simple method of thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. Temperature is the critical experimental parameter for the formation of different morphologies of ZnO nanostructures. Zn or Zn suboxide plays a crucial role for the nucleation of ZnO nanostructures. The as-prepared ZnO nanowires consist of single crystalline cores and thin amorphous shells. As determined by electron diffraction, the growth direction of ZnO nanowires is [001], which has no orientation relationship with the substrate. A strong room-temperature photoluminescence in ZnO nanostructures has been demonstrated. © 2002 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.46.-w Structure of nanoscale materials
81.16.-c Methods of micro- and nanofabrication and processing
81.05.Dz II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
68.55.A- Nucleation and growth
78.55.Et II-VI semiconductors

Electrical characterization of nanocontacts fabricated by nanoindentation and electrodeposition

J. Carrey, K. Bouzehouane, J. M. George, C. Ceneray, T. Blon, M. Bibes, A. Vaurès, S. Fusil, S. Kenane, L. Vila, and L. Piraux

Appl. Phys. Lett. 81, 760 (2002); http://dx.doi.org/10.1063/1.1495524 (3 pages) | Cited 8 times

Online Publication Date: 16 July 2002

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We report on the electrical characterization of various types of nanocontacts fabricated by nanoindentation and electrodeposition. Arrays of holes with depths ranging from 0 to 20 nm were produced by nanoindenting at different strengths an Al2O3-50 Å/NiFe-150 Å//Si bilayer. NiFe was then electrodeposited, which led to the growth of particles in the holes. The resistance of the particles was measured with a conducting tip atomic force microscope. Depending on the strength used during the nanoindentation, the resistance ranges from less than 5×103 Ω to more than 1012 Ω. The low-resistance constrictions can be used to study ballistic transport in materials. High-resistance contacts presumably correspond to tunnel nanojunctions. © 2002 American Institute of Physics.
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73.63.Bd Nanocrystalline materials
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.23.Ad Ballistic transport
81.07.Bc Nanocrystalline materials
81.15.Pq Electrodeposition, electroplating
68.35.Gy Mechanical properties; surface strains
82.45.Qr Electrodeposition and electrodissolution
68.37.Ps Atomic force microscopy (AFM)
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
81.16.-c Methods of micro- and nanofabrication and processing
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