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Applied Physics Letters / Volume 81 / Issue 5 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 81, 883 (2002); http://dx.doi.org/10.1063/1.1496498 (3 pages)

Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

A. Galeckas, J. Linnros, and P. Pirouz

Department of Electronics, Royal Institute of Technology, Electrum 229, SE-164 40 Stockholm, Sweden

(Received 8 April 2002; accepted 31 May 2002)

The extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation energy of 0.27 eV is obtained. Based on this and analysis of the emission spectra, a radiative recombination level of 2.8 eV for the stacking fault, and two energy levels for the partial dislocation, a radiative one at 1.8 eV and a nonradiative at 2.2 eV, have been determined. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon compounds, wide band gap semiconductors, p-i-n diodes, stacking faults, dislocation motion, optical microscopy, radiative lifetimes, nonradiative transitions, defect states, electroluminescence

PACS

  • 85.30.Kk

    Junction diodes

  • 61.72.Nn

    Stacking faults and other planar or extended defects

  • 61.72.Lk

    Linear defects: dislocations, disclinations

  • 78.60.Fi

    Electroluminescence

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

  • 71.55.Ht

    Other nonmetals

  • 73.20.Hb

    Impurity and defect levels; energy states of adsorbed species

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1496498

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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