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29 Jul 2002

Volume 81, Issue 5, pp. 789-944

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Low-voltage inverted transparent vacuum deposited organic light-emitting diodes using electrical doping

X. Zhou, M. Pfeiffer, J. S. Huang, J. Blochwitz-Nimoth, D. S. Qin, A. Werner, J. Drechsel, B. Maennig, and K. Leo

Appl. Phys. Lett. 81, 922 (2002); http://dx.doi.org/10.1063/1.1496502 (3 pages) | Cited 82 times

Online Publication Date: 22 July 2002

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We demonstrate low-voltage inverted transparent vacuum deposited organic light-emitting diodes employing an indium-tin-oxide coated glass substrate directly as cathode and a semitransparent top Au thin film as anode. The devices comprise an intrinsic 8-tris-hydroxyquinoline aluminum (Alq3) emitting layer sandwiched in between n- and p-doped charge transport layer with appropriate blocking layers. They exhibit low driving voltages (∼4 V for a luminance of ∼100 cd/m2). The devices are about 50% transparent in the Alq3 emission region and emit green light from both sides with a total external current efficiency of about 2.5 cd/A. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices

DNA spintronics

M. Zwolak and M. Di Ventra

Appl. Phys. Lett. 81, 925 (2002); http://dx.doi.org/10.1063/1.1496504 (3 pages) | Cited 47 times

Online Publication Date: 22 July 2002

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We predict, using a tight-binding model, that spin-dependent transport can be observed in short DNA molecules sandwiched between ferromagnetic contacts. In particular, we show that a DNA spin valve can be realized with magnetoresistance values of as much as 26% for Ni and 16% for Fe contacts. Spin-dependent transport can broaden the possible applications of DNA as a component in molecular electronics and shed new light into the transport properties of this important biological molecule. © 2002 American Institute of Physics.
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85.65.+h Molecular electronic devices
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.De Giant magnetoresistance
72.15.Gd Galvanomagnetic and other magnetotransport effects

Electrochromism in Ir–Mg oxide films

A. Azens and C. G. Granqvist

Appl. Phys. Lett. 81, 928 (2002); http://dx.doi.org/10.1063/1.1497189 (2 pages) | Cited 10 times

Online Publication Date: 22 July 2002

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Thin films of IrMgyOz with 2<y<5 were produced by reactive dc magnetron sputtering. Electrochromism was investigated by voltammetric cycling in proprionic acid and by spectrophotometry. The Mg addition yielded enhanced optical modulation and bleached state transparency, while good cycling durability prevailed. © 2002 American Institute of Physics.
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42.79.Wc Optical coatings
78.66.Nk Insulators
78.20.Jq Electro-optical effects
81.15.Cd Deposition by sputtering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Negative differential conductance in the tunnel Schottky contact with two-dimensional channel

Michael N. Feiginov

Appl. Phys. Lett. 81, 930 (2002); http://dx.doi.org/10.1063/1.1497715 (3 pages) | Cited 4 times

Online Publication Date: 22 July 2002

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A semiconductor tunnel structure with negative differential conductance (NDC) is proposed and analyzed theoretically. NDC appears due to tunneling through a Schottky barrier into a quantum well. That can be realized in the structures similar to high electron-mobility transistor (HEMT) with tunneling between the gate and two-dimensional channel. Both diodes (two-terminal devices) and transistors (in particular, HEMTs) with NDC could be realized on the basis of the structures. Such structures could be used for generation of high-frequency radiation. The proposed structure should also have the current–voltage characteristic of N type. © 2002 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling

Reduction of the light-onset voltage of light-emitting diodes based on a soluble poly(p-phenylene vinylene) by grafting polar molecules onto indium–tin oxide

J. Morgado, A. Charas, and N. Barbagallo

Appl. Phys. Lett. 81, 933 (2002); http://dx.doi.org/10.1063/1.1497440 (3 pages) | Cited 12 times

Online Publication Date: 22 July 2002

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We report on the reduction of the light-onset voltage of light-emitting diodes based on poly[(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] with aluminum cathodes down to 2.2 V by grafting polar molecules onto indium-tin oxide. This value is close to Eg/e = 2.13 V, Eg being the energy gap estimated from the absorption onset and e the electron charge, in spite of the poor electron injection ability of the aluminum cathode. In addition, there is a very efficient suppression of the commonly observed low-voltage current peaks. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
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