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29 Jul 2002

Volume 81, Issue 5, pp. 789-944

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Strontium–titanate-doped lead metaniobate ferroelectric thin films

J. M. Xue, S. Ezhilvalavan, X. S. Gao, and J. Wang

Appl. Phys. Lett. 81, 877 (2002); http://dx.doi.org/10.1063/1.1494838 (3 pages) | Cited 3 times

Online Publication Date: 22 July 2002

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Ferroelectric polymorph of lead metaniobate (PbNb2O6) exhibits an orthorhombic structure, which is metastable at room temperature and can only be obtainable by quenching from high temperatures ( ∼ 1200 °C). In this letter, we report a ferroelectric PbNb2O6 thin film doped with SrTiO3 (Pb0.95Sr0.05(Nb2)0.98Ti0.05O6) with orthorhombic structure on Pt/Ti/Si substrate, which was prepared via a sol-gel route. The orthorhombic structure was developed at 900 °C at a normal heating rate of 5 °C/min and cooling rate of 10 °C/min. The PbNb2O6 film exhibited a remanent polarization (Pr) of 12.3 μC/cm2 and a coercive field (Ec) of 39 kV/cm, respectively, when measured at an applied field of 143 kV/cm. The leakage current density was 1.02×10−5 A/cm2 at 100 kV/cm. The room-temperature dielectric constant and dissipation factor was stable ( ∼ 325 and ∼ 1.5%, respectively) over a frequency range of 1 kHz to 1 MHz. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Leakage current characteristics of laser-ablated SrBi2Nb2O9 thin films

Rasmi R. Das, P. Bhattacharya, W. Pérez, Ram S. Katiyar, and A. S. Bhalla

Appl. Phys. Lett. 81, 880 (2002); http://dx.doi.org/10.1063/1.1495880 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2002

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We have studied the leakage current conduction mechanism of pulsed-laser-deposited SrBi2Nb2O9 (SBN) thin films on platinized silicon substrates. The time-dependent dc leakage current densities of SBN thin films do not follow Curie–von Schweidler power law. Instead the contribution of conduction current is predominantly electronic. At lower fields, the leakage current follows the ohmic behavior, and it increases exponentially for higher fields. The leakage current density of the SBN thin films was studied at elevated temperatures, and the data were fitted with the Schottky emission model. The effective Richardson’s constant was calculated to be about 8.7×10−6 A/cm2 K2. The Schottky barrier height of the SBN thin films was estimated to be 1.37 eV. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
73.30.+y Surface double layers, Schottky barriers, and work functions

Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

A. Galeckas, J. Linnros, and P. Pirouz

Appl. Phys. Lett. 81, 883 (2002); http://dx.doi.org/10.1063/1.1496498 (3 pages) | Cited 58 times

Online Publication Date: 22 July 2002

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The extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation energy of 0.27 eV is obtained. Based on this and analysis of the emission spectra, a radiative recombination level of 2.8 eV for the stacking fault, and two energy levels for the partial dislocation, a radiative one at 1.8 eV and a nonradiative at 2.2 eV, have been determined. © 2002 American Institute of Physics.
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85.30.Kk Junction diodes
61.72.Nn Stacking faults and other planar or extended defects
61.72.Lk Linear defects: dislocations, disclinations
78.60.Fi Electroluminescence
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
71.55.Ht Other nonmetals
73.20.Hb Impurity and defect levels; energy states of adsorbed species

From incipient ferroelectricity in CaTiO3 to real ferroelectricity in Ca1−xPbxTiO3 solid solutions

V. V. Lemanov, A. V. Sotnikov, E. P. Smirnova, and M. Weihnacht

Appl. Phys. Lett. 81, 886 (2002); http://dx.doi.org/10.1063/1.1497199 (3 pages) | Cited 21 times

Online Publication Date: 22 July 2002

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Dielectric spectra of ceramic samples of Ca1−xPbxTiO3 (0 ⩽ x ⩽ 0.4) solid solutions were studied at frequencies between 10 Hz and 1 MHz in a temperature range of 4.2–300 K. A ferroelectric phase transition was observed at x = 0.3 with transformation to a relaxor type behavior at x>0.3. The transition temperature Tc follows a linear dependence Tc∝(x−xc) with xc = 0.28 contrary to a square-root dependence Tc∝(x−xc)1/2 predicted by the theory for incipient ferroelectrics. The critical concentration essentially exceeds the xc values for SrTiO3 and KTaO3 incipient ferroelectrics. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitors

L. J. Sinnamon, R. M. Bowman, and J. M. Gregg

Appl. Phys. Lett. 81, 889 (2002); http://dx.doi.org/10.1063/1.1496144 (3 pages) | Cited 36 times

Online Publication Date: 22 July 2002

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Pulsed-laser deposition has been used to fabricate Au/Ba0.5Sr0.5TiO3/SrRuO3/MgO thin film capacitor structures. Crystallographic and microstructural investigations indicated that the Ba0.5Sr0.5TiO3 (BST) had grown epitaxially onto the SrRuO3 lower electrode, inducing in-plane compressive and out-of-plane tensile strain in the BST. The magnitude of strain developed increased systematically as film thickness decreased. At room temperature this composition of BST is paraelectric in bulk. However, polarization measurements suggested that strain had stabilized the ferroelectric state, and that the decrease in film thickness caused an increase in remanent polarization. An increase in the paraelectric–ferroelectric transition temperature upon a decrease in thickness was confirmed by dielectric measurements. Polarization loops were fitted to Landau–Ginzburg–Devonshire (LGD) polynomial expansion, from which a second order paraelectric–ferroelectric transition in the films was suggested at a thickness of ∼500 nm. Further, the LGD analysis showed that the observed changes in room temperature polarization were entirely consistent with strain coupling in the system. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.B- Phase transitions and Curie point
68.60.Bs Mechanical and acoustical properties
77.22.Ej Polarization and depolarization

Shear-mode piezoelectric properties of Pb(Yb1/2Nb1/2)O3–PbTiO3 single crystals

Shujun Zhang, Lebrun Laurent, Sorah Rhee, Clive A. Randall, and Thomas R. Shrout

Appl. Phys. Lett. 81, 892 (2002); http://dx.doi.org/10.1063/1.1497435 (3 pages) | Cited 20 times

Online Publication Date: 22 July 2002

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In this letter, the shear-mode piezoelectric and electromechanical properties of 0.55Pb(Yb1/2Nb1/2)O3–0.45PbTiO3 (PYNT45) single crystals are reported. The piezoelectric coefficients d15 and g15 were found to be 2100 pC/N and 0.064 Vm/N, respectively, with an electromechanical coupling coefficient k15 of 91% at room temperature. With increasing temperature, the values decreased dramatically above 168 °C, corresponding to the ferroelectric–ferroelectric phase transition temperature. In contrast to 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 single crystals, PYNT45 crystals exhibit a larger g15 and the useful temperature range is significantly expanded. High-temperature aging experiments showed that PYNT45 single crystals exhibit good domain stability. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis

Ferroelectric Pb(Zr,Ti)O3/Al2O3/4H–SiC diode structures

S.-M. Koo, S. I. Khartsev, C.-M. Zetterling, A. M. Grishin, and M. Östling

Appl. Phys. Lett. 81, 895 (2002); http://dx.doi.org/10.1063/1.1497443 (3 pages) | Cited 5 times

Online Publication Date: 22 July 2002

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Pb(Zr,Ti)O3 (PZT) films (450 nm thick) were grown on 4H–silicon carbide (SiC) substrates by a pulsed-laser deposition technique. X-ray diffraction confirms single PZT phase without a preferred orientation. Stable capacitance–voltage (C–V) loops with low conductance (<0.1 mS/cm2, tan δ ∼ 0.0007 at 400 kHz) and memory window as wide as 10 V were obtained when 5-nm-thick Al2O3 was used as a high band gap (Eg ∼ 9 eV) barrier buffer layer between PZT (Eg ∼ 3.5 eV) and SiC (Eg ∼ 3.2 eV). High-frequency (400 kHz) C–V characteristics revealed clear accumulation, and depletion behavior. Although the charge injection from SiC is the dominant mechanism for C–V hysteresis in PZT/Al2O3/SiC, negligible sweep rate dependence and negligible applied bias dependence were observed compared to that of PZT/SiC. By using room-temperature photoilluminated C–V measurements, the interface states as well as the charge trapping in the PZT/Al2O3 stacks have been calculated. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.Gk Non-volatile ferroelectric memories
71.20.Nr Semiconductor compounds

Effect of atmosphere during heating of substrate on the low temperature deposition of metalorganic chemical vapor deposited Pb(Zrx,Ti1−x)O3 thin films

Kouji Tokita, Masanori Aratani, and Hiroshi Funakubo

Appl. Phys. Lett. 81, 898 (2002); http://dx.doi.org/10.1063/1.1497446 (3 pages) | Cited 7 times

Online Publication Date: 22 July 2002

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The effect of the atmosphere during the heating of a substrate before starting the deposition on the characteristics of the deposited Pb(Zrx,Ti1−x)O3 (PZT) films was investigated. Rhombohedral PZT films were prepared on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) from 415 to 580 °C. PZT films with smooth surfaces and low leakage current densities were obtained when the substrate was heated under an Ar atmosphere at the heating rate of 7 °C/min. Moreover, a crystalline PZT film having good ferroelectricity was obtained at as low as 415 °C when the substrate was heated under the Ar atmosphere, while the film consisted of an amorphous phase when the substrate was heated under an O2 atmosphere. These results clearly show that heating the substrate under an Ar atmosphere before starting the deposition is effective for obtaining a film with a large ferroelectricity at a low deposition temperature for the MOCVD process. © 2002 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Gh Other heat and thermomechanical treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Ng Insulators
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