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29 Jul 2002

Volume 81, Issue 5, pp. 789-944

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Optical waveguides fabricated by pulsed-laser deposition of SiO2 films with different refractive indices

M. Okoshi, M. Kuramatsu, and N. Inoue

Appl. Phys. Lett. 81, 789 (2002); http://dx.doi.org/10.1063/1.1496134 (3 pages)

Online Publication Date: 22 July 2002

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We deposited pure SiO2 films with different refractive indices by pulsed-laser deposition with silicone targets. The refractive index of the films could be controlled by the deposition rate. Lowering of the deposition rate helped to make a dense film, showing higher refractive index. A 0.4-μm-thick SiO2 cladding film deposited at 0.1 nm/pulse was first formed on the whole surface of a Si wafer, and then a 1-μm-thick SiO2 core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as an optical waveguide for a 633 nm line of He–Ne laser. © 2002 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
81.15.Fg Pulsed laser ablation deposition
42.79.Wc Optical coatings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Europium complex as a highly efficient red emitter in electroluminescent devices

Pei-Pei Sun, Jiun-Pey Duan, Huai-Ting Shih, and Chien-Hong Cheng

Appl. Phys. Lett. 81, 792 (2002); http://dx.doi.org/10.1063/1.1497714 (3 pages) | Cited 66 times

Online Publication Date: 22 July 2002

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Several devices using a europium complex Eu(TTA)3(DPPz)(TTA = 2-thenoyltrifluoroacetonate, DPPz = dipyrido[3,2-a:2′,3′-c]phenazine) as dopant emitter were fabricated. The performances of these devices are among the best reported for devices incorporating a europium complex as a red emitter. One such device with structure TPD (50 nm)/Eu:CBP (4.5%, 30 nm)/BCP (30 nm)/Alq (25 nm) exhibits an external quantum efficiency 2.1%, current efficiency 4.4 cd/A, power efficiency 2.1 lm/W, and brightness 1670 cd/m2. © 2002 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Polymeric multimode waveguide based electro-optic modulator with a vertically configured dumping planar waveguide

Xuejun Lu, Chiou-hung Jang, Dechang An, Qingjun Zhou, Lin Sun, Xuping Zhang, Ray T. Chen, and Dan Dawson

Appl. Phys. Lett. 81, 795 (2002); http://dx.doi.org/10.1063/1.1497186 (3 pages) | Cited 3 times

Online Publication Date: 22 July 2002

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An electro-optic modulator based on a polymeric multimode waveguide coupler was developed. A guiding multimode waveguide with a vertically configured dumping planar waveguide was employed in the design to increase the device packing density. A modulation depth of 91% at 1330 nm was experimentally achieved. This device shows that the multimode optical waveguide with the vertically configured dumping planar waveguide is promising in electro-optic modulator designs. This modulator can be used in multimode optical interconnection systems such as data communications and fiber sensor networks. © 2002 American Institute of Physics.
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42.82.Gw Other integrated-optical elements and systems
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics

Design of one-dimensional random surfaces with specified scattering properties

E. R. Méndez, E. E. García-Guerrero, T. A. Leskova, A. A. Maradudin, J. Muñoz-López, and I. Simonsen

Appl. Phys. Lett. 81, 798 (2002); http://dx.doi.org/10.1063/1.1495900 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2002

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We propose a method for designing a one-dimensional random perfectly conducting surface which, when illuminated by a plane wave, scatters it with a prescribed angular distribution of intensity. The method is applied to the design of a surface that scatters light uniformly within a specified range of scattering angles, and produces no scattering outside this range. It is tested by computer simulations, and a procedure for fabricating such surfaces on photoresist is described. © 2002 American Institute of Physics.
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42.25.Fx Diffraction and scattering

Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, and M. Razeghi

Appl. Phys. Lett. 81, 801 (2002); http://dx.doi.org/10.1063/1.1497709 (2 pages) | Cited 43 times

Online Publication Date: 22 July 2002

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We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ∼5 V with a differential resistance of ∼40 Ω. The peak emission wavelength redshifts ∼1 nm at high injection currents. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Electric-field tuning of the Rabi splitting in a superlattice-embedded microcavity

J. H. Dickerson, J. K. Son, E. E. Mendez, and A. A. Allerman

Appl. Phys. Lett. 81, 803 (2002); http://dx.doi.org/10.1063/1.1495901 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2002

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We have demonstrated comprehensive electric field tuning of the Rabi splitting between the excitonic and photonic modes of a superlattice-embedded microcavity. Using photocurrent spectroscopy to measure the coupling between the modes, we have tuned the microcavity to the maximum possible splitting. We have observed a marked increase in the splitting from 4.5 to 11.5 meV, due to the electric-field enhancement of the superlattice exciton’s oscillator strength and the oscillator strength’s subsequent decrease due to the quantum confined Stark effect. As well, we have determined the oscillator strength for the exciton, finding good agreement with theoretical and experimental values. © 2002 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.21.Cd Superlattices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena

Organic single-layer electroluminescent devices fabricated on CuOx-coated indium tin oxide substrate

Wenping Hu and Michio Matsumura

Appl. Phys. Lett. 81, 806 (2002); http://dx.doi.org/10.1063/1.1497441 (2 pages) | Cited 18 times

Online Publication Date: 22 July 2002

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Organic single-layer devices were fabricated by depositing tris(8-quinolinato)aluminum (ALQ) layer on CuOx-coated indium tin oxide (ITO) substrates. These organic single-layer devices showed luminance as high as 2500 cd/m2, and the luminance-current efficiency reached 1.2 cd/A, which was higher than that of single-layer devices fabricated on conventional ITO substrates by eight times. The improvement in the electroluminescent properties of these devices was attributed to the enhanced hole injection from the CuOx-coated ITO into the ALQ layer. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices

Lasing from semiconductor microring on the end of an optical fiber

B. Corbett, P. Lambkin, G. H. Wu, J. Houlihan, and G. Huyet

Appl. Phys. Lett. 81, 808 (2002); http://dx.doi.org/10.1063/1.1496496 (3 pages) | Cited 3 times

Online Publication Date: 22 July 2002

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Isolated InGaAsP microrings with an outer diameter of 5.8 μm, a width of 1 μm, and a thickness of 0.41 μm were fabricated by epitaxial separation. Individual devices were bonded to multimode optical fiber using Van der Waals forces and optically pumped through the fiber. Lasing around 1505 nm was measured under pulsed and cw pumping at room temperature. The threshold pump power for pulsed operation was estimated to be 38 and 80 μW for cw operation. Multiple radial and azimuthal modes were present due to strong, three-dimensional confinement. Under strong pulsed pumping thermal effects caused the emission wavelength to chirp. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.Fc Modulation, tuning, and mode locking

Enhanced fundamental and self-frequency-doubling laser emission efficiency in 4F3/2 directly pumped Nd-activated nonlinear crystals: The case of GdCa4O(BO3)3

V. Lupei, G. Aka, and D. Vivien

Appl. Phys. Lett. 81, 811 (2002); http://dx.doi.org/10.1063/1.1494119 (3 pages) | Cited 10 times

Online Publication Date: 22 July 2002

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The possibilities of improvement of laser emission characteristics and reduction of heat generation by direct pumping at 887 nm into the emitting level 4F3/2 of Nd3+ in the self-frequency-doubling crystal Nd–GdCOB [GdCa4O(BO3)3] are discussed. Enhanced laser emission performances at fundamental 1060 nm, and especially at the self-frequency-doubled 530 nm wavelengths as compared to the traditional 811 nm pumping into the 4F5/2 level, are demonstrated. © 2002 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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