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29 Jul 2002

Volume 81, Issue 5, pp. 789-944

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Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki

Appl. Phys. Lett. 81, 817 (2002); http://dx.doi.org/10.1063/1.1496142 (3 pages) | Cited 12 times

Online Publication Date: 22 July 2002

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SiGe microcavities with Ge dots were fabricated by employing strain-balanced SiGe/Si Bragg reflectors, and it was observed that photoluminescence from Ge dots embedded in the microcavity structure was significantly modulated due to the cavity effect. The characteristic luminescence of the microcavity was observed up to 200 K, and the thermal activation energy of the luminescence was largely improved compared with that of cavities with quantum wells. © 2002 American Institute of Physics.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.55.Hx Other solid inorganic materials
78.55.Ap Elemental semiconductors
68.60.Bs Mechanical and acoustical properties
68.65.Hb Quantum dots (patterned in quantum wells)
42.55.Sa Microcavity and microdisk lasers
81.05.Cy Elemental semiconductors
81.05.Hd Other semiconductors
78.66.Db Elemental semiconductors and insulators

Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer

W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, and H. H. Cheng

Appl. Phys. Lett. 81, 820 (2002); http://dx.doi.org/10.1063/1.1494103 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2002

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Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si–Ge devices. © 2002 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Ls Metallization, contacts, interconnects; device isolation
68.55.A- Nucleation and growth
68.37.Lp Transmission electron microscopy (TEM)
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
81.05.Hd Other semiconductors
73.40.Ns Metal-nonmetal contacts
68.35.Dv Composition, segregation; defects and impurities
68.35.Ct Interface structure and roughness
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature

X. Zhang, H. Wang, R. O. Scattergood, J. Narayan, C. C. Koch, A. V. Sergueeva, and A. K. Mukherjee

Appl. Phys. Lett. 81, 823 (2002); http://dx.doi.org/10.1063/1.1494866 (3 pages) | Cited 32 times

Online Publication Date: 22 July 2002

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Tensile tests were performed for Zn at room temperature, which show elongations of 110%–20% for average grain sizes of 240–23 nm, respectively. The ductility of ultrafine-grained and nanocrystalline Zn was found to decrease with grain size refinement. The deformation mechanisms in ultrafine-grained Zn are believed to be a mixture of grain boundary sliding of small nanograins and intra-grain dislocation creep within the large grains. © 2002 American Institute of Physics.
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81.40.Lm Deformation, plasticity, and creep
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
62.25.-g Mechanical properties of nanoscale systems
62.20.F- Deformation and plasticity
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.40.Gh Other heat and thermomechanical treatments
62.20.Hg Creep

Dependence of boron cluster dissolution on the annealing ambient

Ljubo Radic, Aaron D. Lilak, and Mark E. Law

Appl. Phys. Lett. 81, 826 (2002); http://dx.doi.org/10.1063/1.1496505 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2002

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Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process. © 2002 American Institute of Physics.
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66.30.J- Diffusion of impurities
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.72.uf Ge and Si
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
61.72.S- Impurities in crystals
66.30.Lw Diffusion of other defects

Short Bragg mirrors with adiabatic modal conversion

D. Peyrade, E. Silberstein, Ph. Lalanne, A. Talneau, and Y. Chen

Appl. Phys. Lett. 81, 829 (2002); http://dx.doi.org/10.1063/1.1497722 (3 pages) | Cited 24 times

Online Publication Date: 22 July 2002

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A silicon-on-insulator waveguide-based microcavity with short tapers has been realized by incorporating two identical eight-groove tapers at the two reflector extremities. The microstructure has an overall length of 14 μm and consists of two first-order Bragg mirrors with narrow slits (90 nm) and of four series of slits with progressively varying widths (tapers). A comparison with a nontapered cavity evidences the beneficial effect of the taper, a lowering of the radiation losses. © 2002 American Institute of Physics.
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42.82.Gw Other integrated-optical elements and systems
42.79.Bh Lenses, prisms and mirrors
42.79.Gn Optical waveguides and couplers

Femtosecond laser induced crystallization and permanent relief grating structures in amorphous inorganic (In2O3+1 wt % TiO2) films

Shigeru Katayama, Naoto Tsutsumi, Toshitaka Nakamura, Mika Horiike, and Kazuyuki Hirao

Appl. Phys. Lett. 81, 832 (2002); http://dx.doi.org/10.1063/1.1497713 (3 pages) | Cited 4 times

Online Publication Date: 22 July 2002

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This letter presents an investigation of crystalline relief grating structures induced by irradiation of near-infrared femtosecond laser pulses on an amorphous inorganic (In2O3+1 wt % TiO2) film. The shapes of crystallized relief structures were sensitive to the scanning rate and the focused point height of irradiation, and the optimized irradiation condition gave cone-shaped cross section structures. Selective wet etching on unirradiated amorphous regions using a 3% hydrochloric acid solution could make sharper relief grating structures of crystalline regions. Diffraction efficiency of the relief grating structures with Au coating was measured, and it was confirmed that first-order diffraction, efficiencies were approximately 40% and 20% for etched and nonetched samples, respectively. © 2002 American Institute of Physics.
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42.62.-b Laser applications
42.79.Dj Gratings
68.35.Rh Phase transitions and critical phenomena
79.20.Ds Laser-beam impact phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.65.Cf Surface cleaning, etching, patterning
61.72.Cc Kinetics of defect formation and annealing

Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films

J.-P. Palmquist, U. Jansson, T. Seppänen, P. O. Å. Persson, J. Birch, L. Hultman, and P. Isberg

Appl. Phys. Lett. 81, 835 (2002); http://dx.doi.org/10.1063/1.1494865 (3 pages) | Cited 58 times

Online Publication Date: 22 July 2002

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We report on the synthesis and characterization of epitaxial single-crystalline Ti3SiC2 films (Mn+1AXn-phase). Two original deposition techniques are described, (i) magnetron sputtering from Ti3SiC2 compound target and (ii) sputtering from individual titanium and silicon targets with co-evaporated C60 as carbon source. Epitaxial Ti3SiC2 films of single-crystal quality were grown at 900 °C with both techniques. Epitaxial TiC(111) deposited in situ on MgO(111) by Ti sputtering using C60 as carbon source was used to nucleate the Ti3SiC2 films. The epitaxial relationship was found to be Ti3SiC2(0001)//TiC(111)//MgO(111) with the in-plane orientation Ti3SiC2[100]//TiC[101]//MgO[101]. © 2002 American Institute of Physics.
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81.15.Cd Deposition by sputtering
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Photonic crystals of shape-anisotropic colloidal particles

Krassimir P. Velikov, Teun van Dillen, Albert Polman, and Alfons van Blaaderen

Appl. Phys. Lett. 81, 838 (2002); http://dx.doi.org/10.1063/1.1497197 (3 pages) | Cited 36 times

Online Publication Date: 22 July 2002

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Spherical silica (SiO2), zinc sulfide (ZnS), and core-shell particles of these materials undergo substantial anisotropic plastic deformation under high-energy ion irradiation. Individual particles can be turned into oblate or prolate ellipsoids with exact control over the aspect ratio. In this letter, we report on the fabrication and optical characterization of thin three-dimensional photonic crystals of spherical particles, which have been anisotropically deformed into spheroidal oblates by means of ion irradiation. As a result of the collective deformation process, both the unit cell symmetry and the particle form factor have been changed leading to appreciable tunability in the optical properties of the photonic crystal. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
82.70.Dd Colloids
62.20.F- Deformation and plasticity
61.80.Jh Ion radiation effects

Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes

J. Narayan, H. Wang, Jinlin Ye, Schang-Jing Hon, Kenneth Fox, Jyh Chia Chen, H. K. Choi, and John C. C. Fan

Appl. Phys. Lett. 81, 841 (2002); http://dx.doi.org/10.1063/1.1496145 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2002

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InxGa(1−x)N/GaN multiquantum-well light-emitting diodes (LEDs) having periodic thickness variations (TVs) in InxGa(1−x)N active layers exhibit substantially higher optical efficiency than LEDs with uniform InxGa(1−x)N layers. In these nanostructured LEDs, the thickness variation of the active layers is found to be more important than the In composition fluctuation in quantum confinement of excitons (carriers). Detailed scanning transmission electron microscopy-atomic number Z contrast analysis, where image contrast is proportional to Z2 (Z being the atomic number), was carried out to investigate the variation in thickness as well as the spatial distribution of In. In the nanostructured LEDs, there are short-range thickness variations (SR-TVs) (3–4 nm) and long-range thickness variations (LR-TVs) (50–100 nm) in InxGa(1−x)N layers. It is envisaged that LR-TV is key to quantum confinement of the carriers and enhancement of the optical efficiency. We propose that the LR-TV is caused by two-dimensional strain in the InxGa(1−x)N layer below its critical thickness. The SR-TV may be caused by In composition fluctuation. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
68.65.Fg Quantum wells
81.05.Ea III-V semiconductors
73.21.Fg Quantum wells
81.07.St Quantum wells
68.37.Lp Transmission electron microscopy (TEM)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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