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19 Aug 2002

Volume 81, Issue 8, pp. 1369-1534

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Comment on “Forward current propagation beyond the virtual cathode formed by a high injection current” [Appl. Phys. Lett, 79, 913 (2001)]

Alexander E. Dubinov and Irina A. Efimova

Appl. Phys. Lett. 81, 1530 (2002); http://dx.doi.org/10.1063/1.1495884 (2 pages) | Cited 4 times

Online Publication Date: 9 August 2002

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Abstract Unavailable
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
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Response to “Comment on ‘Forward current propagation beyond the virtual cathode formed by a high injection current’ ” [Appl. Phys. Lett. 81, 1530 (2002)]

Han S. Uhm, Eun H. Choi, and Myung C. Choi

Appl. Phys. Lett. 81, 1532 (2002); http://dx.doi.org/10.1063/1.1495885 (2 pages) | Cited 1 time

Online Publication Date: 9 August 2002

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
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