APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Aug 2002

Volume 81, Issue 8, pp. 1369-1534

Return to All Sections
back to top
RSS Feeds

Crystallographic orientation of Cr in longitudinal recording media and its relation to magnetic anisotropy

Antony Ajan and Iwao Okamoto

Appl. Phys. Lett. 81, 1465 (2002); http://dx.doi.org/10.1063/1.1500433 (3 pages) | Cited 9 times

Online Publication Date: 9 August 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A specific growth of Cr layer grains is found to exist when grown on the mechanically textured NiP–Al substrates used for longitudinal recording. High resolution transmission electron microscopy analysis of a large number of individual Cr grains indicate a Cr[110] preferential growth along the textured direction (groove or circumferential direction). This particular orientation of the Cr underlayer is found to be the cause of an in-plane magnetic anisotropy of the Co based magnetic layer. The temperature dependence of this in-plane magnetic anisotropy study indicated the importance of the specific crystallographic orientations of both the underlayer and the magnetic layer. © 2002 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.50.Ss Magnetic recording materials
68.37.Lp Transmission electron microscopy (TEM)

Characterization of spin valves fabricated on opaque substrates by optical ferromagnetic resonance

A. Barman, V. V. Kruglyak, R. J. Hicken, C. H. Marrows, M. Ali, A. T. Hindmarch, and B. J. Hickey

Appl. Phys. Lett. 81, 1468 (2002); http://dx.doi.org/10.1063/1.1501159 (3 pages) | Cited 4 times

Online Publication Date: 9 August 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have used a transmission line deposited on a transparent substrate to deliver an optically triggered magnetic field pulse to a spin valve structure deposited upon an opaque substrate. The ensuing ferromagnetic resonance oscillations have been studied in optical pump-probe experiments in which the probe passes through the transmission line substrate. The resonance frequencies have been modeled by solving the Landau–Lifshitz equation and are used in determining the anisotropy, exchange bias, and interlayer coupling parameters of the sample. © 2002 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.De Giant magnetoresistance
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.30.Gw Magnetic anisotropy
75.30.Et Exchange and superexchange interactions

Epitaxial growth of an n-type ferromagnetic semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

Y. D. Park, A. T. Hanbicki, J. E. Mattson, and B. T. Jonker

Appl. Phys. Lett. 81, 1471 (2002); http://dx.doi.org/10.1063/1.1498503 (3 pages) | Cited 16 times

Online Publication Date: 9 August 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic, and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ∼ 125 Oe. Temperature-dependent transport data show that the films are semiconducting in character and n type as grown, with room-temperature carrier concentrations of n ∼ 1×1018 cm−3. © 2002 American Institute of Physics.
Show PACS
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Hd Other semiconductors
75.50.Pp Magnetic semiconductors
72.80.Ga Transition-metal compounds
75.50.Dd Nonmetallic ferromagnetic materials
73.61.Le Other inorganic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close