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19 Aug 2002

Volume 81, Issue 8, pp. 1369-1534

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Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

J. Maes, M. Hayne, V. V. Moshchalkov, A. Patanè, M. Henini, L. Eaves, and P. C. Main

Appl. Phys. Lett. 81, 1480 (2002); http://dx.doi.org/10.1063/1.1501160 (3 pages) | Cited 5 times

Online Publication Date: 9 August 2002

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We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to three-dimensional charge confinement is observed for InAs deposited on (100) GaAs. On the tilted (311)B substrates, the quantum dot morphology is different, resulting in a weaker charge confinement that gradually increases with the amount of deposited InAs. At 1.9 monolayers, the quantum-dot confinement on this substrate orientation is as effective as for the (100) oriented substrates. By studying the confinement of the charges in samples with quantum dots at different stages of development, we are able to give insight into the quantum-dot formation process. © 2002 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Cr III-V semiconductors
78.20.Ls Magneto-optical effects

Nanoscale patterning of magnetic islands by imprint lithography using a flexible mold

Gary M. McClelland, Mark W. Hart, Charles T. Rettner, Margaret E. Best, Kenneth R. Carter, and Bruce D. Terris

Appl. Phys. Lett. 81, 1483 (2002); http://dx.doi.org/10.1063/1.1501763 (3 pages) | Cited 79 times

Online Publication Date: 9 August 2002

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A nanomolding process for producing 55-nm-diameter magnetic islands over 3-cm-wide areas is described. A master pattern of SiO2 pillars is used to form a polymeric mold, which is in turn used to mold a photopolymer resist film. This latter film is used as a resist for etching SiO2, yielding a pattern of pillars. Finally, an 11-nm-CoPt multilayer is deposited. Magnetic force microscopy reveals that the film on top of each pillar is a magnetically isolated single domain that switches independently. © 2002 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.Ac Multilayers
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning
68.37.Rt Magnetic force microscopy (MFM)

Metal–insulator–semiconductor electrostatics of carbon nanotubes

Jing Guo, Sebastien Goasguen, Mark Lundstrom, and Supriyo Datta

Appl. Phys. Lett. 81, 1486 (2002); http://dx.doi.org/10.1063/1.1502188 (3 pages) | Cited 43 times

Online Publication Date: 9 August 2002

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Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C–V curves reflect the local peaks of the one-dimensional density-of-states in the nanotube. This effect provides the possibility to use C–V measurements to diagnose the electronic structures of nanotubes. Results of the electrostatic calculations can also be applied to estimate the upper-limit on-current of carbon nanotube field-effect transistors. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.63.Fg Nanotubes
85.35.Kt Nanotube devices
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems

Polarized luminescence from self-assembled, aligned, and cleaved supramolecules of highly ordered rodlike polymers

M. Knaapila, O. Ikkala, M. Torkkeli, K. Jokela, R. Serimaa, I. P. Dolbnya, W. Bras, G. ten Brinke, L. E. Horsburgh, L.-O. Pålsson, and A. P. Monkman

Appl. Phys. Lett. 81, 1489 (2002); http://dx.doi.org/10.1063/1.1499222 (3 pages) | Cited 10 times

Online Publication Date: 9 August 2002

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A hierarchical self-assembly in comb-shaped supramolecules of conjugated rodlike polymers is reported. The supramolecules consist of poly(2,5-pyridinediyl), acid dopants, and hydrogen bonded alkyl side chains. A thermotropic smectic state with an exceptionally large coherence length is formed without additional solvent. This allows facile overall alignment resulting in high dichroism and polarized photoluminescence. Solid films are formed by cleaving side groups from the supramolecules which retain the optical anisotropy together with the high photoluminescence quantum yield of pristine polymer. © 2002 American Institute of Physics.
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78.55.Bq Liquids
61.30.Vx Polymer liquid crystals
61.25.H- Macromolecular and polymers solutions; polymer melts
78.20.Fm Birefringence

Nanoscale anodization of an amorphous silicon surface with an atomic force microscope

Ikurou Umezu, Takashi Yoshida, Kimihisa Matsumoto, Akira Sugimura, and Mitsuru Inada

Appl. Phys. Lett. 81, 1492 (2002); http://dx.doi.org/10.1063/1.1501452 (2 pages)

Online Publication Date: 9 August 2002

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Nanoscale anodization was performed on the surface of amorphous silicon thin films by means of an atomic force microscope. The anodization mechanism was different from that previously reported on metal thin films. We found that the anodization was a function of defect density and current through the sample. The optical properties of the anodized area were measured by means of micro-photoluminescence, in which photoluminescence intensity decreases with oxidation. We concluded that both defect reaction and creation processes are important during the nanoscale anodization of amorphous material. © 2002 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Gc Amorphous semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys
81.16.Pr Micro- and nano-oxidation
81.16.Ta Atom manipulation
78.66.Jg Amorphous semiconductors; glasses
78.55.Ap Elemental semiconductors

Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

Qiliang Li, Guru Mathur, Mais Homsi, Shyam Surthi, Veena Misra, Vladimir Malinovskii, Karl-Heinz Schweikart, Lianhe Yu, Jonathan S. Lindsey, Zhiming Liu, Rajeev B. Dabke, Amir Yasseri, David F. Bocian, and Werner G. Kuhr

Appl. Phys. Lett. 81, 1494 (2002); http://dx.doi.org/10.1063/1.1500781 (3 pages) | Cited 39 times

Online Publication Date: 9 August 2002

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Self-assembled monolayers of 4-ferrocenylbenzyl alcohol attached to silicon provided the basis for electrolyte-molecule-silicon capacitors. Characterization by conventional capacitance and conductance techniques showed very high capacitance and conductance peaks near ∼0.6 V associated with charging and discharging of electrons into and from discrete levels in the monolayer owing to the presence of the redox-active ferrocenes. The reversible charge trapping of these molecules suggest their potential application in memory devices. Due to the molecular scalability and low-power operation, molecular-silicon hybrid devices may be strong candidates for next-generation electronic devices. © 2002 American Institute of Physics.
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85.65.+h Molecular electronic devices
84.32.Tt Capacitors
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