APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

10 Mar 2003

Volume 82, Issue 10, pp. 1497-1639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages)

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson
Enlarge Image | Read More
Page 1 of 2 Pages Next Page | Jump to Page
back to top
RSS Feeds

Fiber-taper-coupled L-band Er3+-doped tellurite glass microsphere laser

Xiang Peng, Feng Song, Shibin Jiang, N. Peyghambarian, Makoto Kuwata-Gonokami, and Lei Xu

Appl. Phys. Lett. 82, 1497 (2003); http://dx.doi.org/10.1063/1.1559653 (3 pages) | Cited 25 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Er3+-doped tellurite glass microspheres were fabricated. The microspheres were made by a spin method. A tapered fiber was used to couple the pump into the microsphere and couple out the laser. L-band microsphere laser is demonstrated. This miniature Er3+-doped tellurite glass microsphere laser can be used in photonic microdevices. © 2003 American Institute of Physics.
Show PACS
42.55.Wd Fiber lasers
42.70.Ce Glasses, quartz

The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

Nelson Tansu and Luke J. Mawst

Appl. Phys. Lett. 82, 1500 (2003); http://dx.doi.org/10.1063/1.1558218 (3 pages) | Cited 34 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices. © 2003 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Hs Quantum wells

Simulated causal subwavelength focusing by a negative refractive index slab

Steven A. Cummer

Appl. Phys. Lett. 82, 1503 (2003); http://dx.doi.org/10.1063/1.1554778 (3 pages) | Cited 56 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Subwavelength electromagnetic focusing by a negative refractive index slab is shown to occur in a full wave numerical simulation of a causal, physically realizable negative index material. Limitations on the observability of this effect in simulations and experiments are discussed. © 2003 American Institute of Physics.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.25.Gy Edge and boundary effects; reflection and refraction

Limitations on subdiffraction imaging with a negative refractive index slab

David R. Smith, David Schurig, Marshall Rosenbluth, Sheldon Schultz, S. Anantha Ramakrishna, and John B. Pendry

Appl. Phys. Lett. 82, 1506 (2003); http://dx.doi.org/10.1063/1.1554779 (3 pages) | Cited 179 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A planar slab of material, for which both the permittivity and permeability have the values of −1, can bring not only the propagating fields associated with a source to a focus, but can also refocus the nonpropagating near fields, thereby achieving resolution beyond the diffraction limit. We study the sensitivity of this subwavelength focus to the slab material properties and periodicity, and note the connection to slab surface plasmon modes. We conclude that significant subwavelength resolution is achievable with a single negative index slab, but only over a restrictive range of parameters. © 2003 American Institute of Physics.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.25.Gy Edge and boundary effects; reflection and refraction

Generating visible single photons on demand with single InP quantum dots

V. Zwiller, T. Aichele, W. Seifert, J. Persson, and O. Benson

Appl. Phys. Lett. 82, 1509 (2003); http://dx.doi.org/10.1063/1.1558952 (3 pages) | Cited 47 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present photon correlation measurements performed on a device based on single InP quantum dots. The device consists of a 400 nm thick membrane containing a low density of quantum dots on a metal mirror. Measurements done under continuous excitation reveal a very pronounced antibunching dip while measurements done under pulsed excitation enable the generation of single photons on demand at the optimum wavelength for silicon-based single-photon detectors. © 2003 American Institute of Physics.
Show PACS
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.50.Dv Quantum state engineering and measurements

Tailoring the photonic band gap of a porous silicon dielectric mirror

V. Agarwal and J. A. del Río

Appl. Phys. Lett. 82, 1512 (2003); http://dx.doi.org/10.1063/1.1559420 (3 pages) | Cited 52 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A systematic method to fabricate porous-silicon one-dimensional photonic crystals has been engineered to have a photonic bandwidth up to 2000 nm. The observation of the tailorability of the photonic band gap (PBG) underscores the requirement of the large refractive index contrast for making broad PBG structures. In this letter, we present the fabrication and characteristics of such structures that may be promising structures for a large variety of applications. © 2003 American Institute of Physics.
Show PACS
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.05.Rm Porous materials; granular materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
81.05.Cy Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
42.79.Wc Optical coatings
42.79.Bh Lenses, prisms and mirrors
81.65.Cf Surface cleaning, etching, patterning

Integrated optical distributed feedback laser with Ti:Fe:Er:LiNbO3 waveguide

B. K. Das, R. Ricken, and W. Sohler

Appl. Phys. Lett. 82, 1515 (2003); http://dx.doi.org/10.1063/1.1559443 (3 pages) | Cited 30 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A distributed feedback (DFB) laser in LiNbO3 is demonstrated using a Ti:Fe:Er:LiNbO3 waveguide with a holographically written photorefractive grating. The DFB laser was combined with a waveguide amplifier on the same substrate. Up to 1.12 mW of output power at λ = 1531.35 nm was emitted by the laser/amplifier combination at a pump power level of 240 mW (λP = 1480 nm). The emission spectrum consists of the two lowest-order DFB modes of about 3.9 GHz frequency spacing. Whereas the measured threshold gain of ∼ 3.3 dB/cm approximately agreed with the modeling results, the observed mode spacing was clearly smaller than calculated. © 2003 American Institute of Physics.
Show PACS
42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.40.Eq Holographic optical elements; holographic gratings
42.65.Yj Optical parametric oscillators and amplifiers
85.30.De Semiconductor-device characterization, design, and modeling

High-performance continuous-wave operation of superlattice terahertz quantum-cascade lasers

Rüdeger Köhler, Alessandro Tredicucci, Fabio Beltram, Harvey E. Beere, Edmund H. Linfield, A. Giles Davies, David A. Ritchie, Sukhdeep S. Dhillon, and Carlo Sirtori

Appl. Phys. Lett. 82, 1518 (2003); http://dx.doi.org/10.1063/1.1559419 (3 pages) | Cited 28 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The cw operation of chirped-superlattice quantum-cascade lasers emitting at λ ∼ 67 μm (4.4 THz) is analyzed. Collected (min. 33% efficiency) output powers of 4 mW per facet are measured at liquid helium temperatures and a maximum operating temperature of 48 K is reached. Under pulsed excitation at duty cycles of 0.5%–1%, slightly higher (10%) peak powers are reached, and the device can be operated up to 67 K. Low threshold current densities of 165 and 185 A cm−2 are observed in pulsed and cw operation, respectively. The operation of the laser is examined using the Hakki–Paoli technique to estimate the net gain of the structure. © 2003 American Institute of Physics.
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Approach for imaging optical super-resolution based on Sb films

Ding Rong Ou, Jing Zhu, and Jia Hao Zhao

Appl. Phys. Lett. 82, 1521 (2003); http://dx.doi.org/10.1063/1.1555707 (3 pages) | Cited 5 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Super-resolution technology has been applied to overcome the optical diffraction limit in recent years. In this work, optical super resolution based on Sb films has been studied. Experimental results show that the amorphous Sb–SR will considerably concentrate the energy into the center of the laser beam, while the crystal Sb–SR will not. Considering Sb as a semiconductor with a small energy gap, a three-order nonlinear response of surface plasmons is deduced to explain the phenomenon. Estimation is made and the calculated results are in agreement with the experimental results. © 2003 American Institute of Physics.
Show PACS
42.70.Ln Holographic recording materials; optical storage media
78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.30.Va Image forming and processing
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes

G. M. Lewis, P. M. Smowton, P. Blood, and W. W. Chow

Appl. Phys. Lett. 82, 1524 (2003); http://dx.doi.org/10.1063/1.1559658 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polarization sensitive measurements, in real units, of gain and spontaneous emission of GaInP lasers with three strain and well-width combinations allow us to isolate the intrinsic effects of strain when the well width is also adjusted to maintain a fixed output wavelength. Varying tensile strain and well width, for 635 nm operation, have no effect on transverse magnetic polarized recombination at fixed gain, which is consistent with a constant effective mass in the uppermost valence band, but the total transparency current decreases from 116 to 83 A cm−2 due to increasing separation of light and heavy hole bands. © 2003 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
68.65.Fg Quantum wells

Effect of numerical aperture on the spectral splitting feature near phase singularities of focused waves

Djenan Ganic, James W. M. Chon, and Min Gu

Appl. Phys. Lett. 82, 1527 (2003); http://dx.doi.org/10.1063/1.1560555 (2 pages) | Cited 10 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that because of the depolarization effect associated with a high-numerical-aperture lens, the recently predicted spectral splitting phenomenon near phase singularities of focused waves [G. Gbur, T. D. Visser, and E. Wolf, Phys. Rev. Lett. 88, 013901 (2002)] disappears when the numerical aperture is higher than critical values that are different between the incident polarization direction and the axial direction. © 2003 American Institute of Physics.
Show PACS
42.79.Bh Lenses, prisms and mirrors
42.30.-d Imaging and optical processing
back to top
RSS Feeds

Measurement of highly transient electrical charging following high-intensity laser–solid interaction

M. Borghesi, L. Romagnani, A. Schiavi, D. H. Campbell, M. G. Haines, O. Willi, A. J. Mackinnon, M. Galimberti, L. Gizzi, R. J. Clarke, and S. Hawkes

Appl. Phys. Lett. 82, 1529 (2003); http://dx.doi.org/10.1063/1.1560554 (3 pages) | Cited 31 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The multi-million-electron-volt proton beams accelerated during high-intensity laser–solid interactions have been used as a particle probe to investigate the electric charging of microscopic targets laser-irradiated at intensity ∼ 1019 W cm2. The charge-up, detected via the proton deflection with high temporal and spatial resolution, is due to the escape of energetic electrons generated during the interaction. The analysis of the data is supported by three-dimensional tracing of the proton trajectories. © 2003 American Institute of Physics.
Show PACS
73.40.-c Electronic transport in interface structures
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
41.75.Ak Positive-ion beams
back to top
RSS Feeds

Structural evolution of crystalline polymer latex films: Propagating and confined acoustic modes

Matteo Pierno, Carlo S. Casari, Roberto Piazza, and Carlo E. Bottani

Appl. Phys. Lett. 82, 1532 (2003); http://dx.doi.org/10.1063/1.1558972 (3 pages)

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Structural evolution of polytetrafluoroethylene latex polymer films has been studied by Brillouin light scattering and atomic force microscopy (AFM). Using a tunable sintering process, we have controlled the degree of particle connectivity yielding a crossover in the behavior of acoustic excitations ranging from confined modes to propagating phonons. This transition has been correlated also to the surface morphology by AFM. Fully sintered films are characterized by extended “fibrillar” crystalline regions embedded in a disordered matrix, which still retain features of the original particulate structure. © 2003 American Institute of Physics.
Show PACS
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
68.37.Ps Atomic force microscopy (AFM)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
78.66.Qn Polymers; organic compounds

Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well optical modulators

X. T. Wang and F. C. Jain

Appl. Phys. Lett. 82, 1535 (2003); http://dx.doi.org/10.1063/1.1559645 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of intrinsic strain on the surface acoustic wave (SAW)-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well (MQW) optical modulators is investigated. We solve the exciton equation in momentum space using a two-dimensional quadrature method to obtain the birefringence Δn by the SAW induced strain. Our calculations are in good agreement with the experimental results in AlGaAs–GaAs and InGaAs–GaAs MQWs. Intrinsic strain influences the band mixing of valance subbands in quantum wells in the presence of asymmetric strain. We have shown that birefringence (Δn∼0.06) is significantly higher in tensile strained (ε∼0.7%) InGaAsP–InP MQWs than in compressively strained In0.21Ga0.79As–GaAs MQW devices. © 2003 American Institute of Physics.
Show PACS
42.79.Jq Acousto-optical devices
42.79.Hp Optical processors, correlators, and modulators
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.65.Fg Quantum wells
73.21.Fg Quantum wells
78.20.Fm Birefringence
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
68.35.Iv Acoustical properties
71.35.-y Excitons and related phenomena

Faraday effect of photonic crystals

C. Koerdt, G. L. J. A. Rikken, and E. P. Petrov

Appl. Phys. Lett. 82, 1538 (2003); http://dx.doi.org/10.1063/1.1558954 (3 pages) | Cited 24 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We measured Faraday rotation in three-dimensional photonic colloidal crystals impregnated with a Faraday active, transparent liquid. The Faraday effect was found to strongly increase inside the stop band, whereas outside it follows the normal spectral behavior of a paramagnetic dielectric with an effective Verdet constant equal to the product of the liquid’s Verdet constant and its filling fraction. © 2003 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
78.20.Ls Magneto-optical effects
78.40.-q Absorption and reflection spectra: visible and ultraviolet
82.70.Dd Colloids

Determination of built-in electric fields in quaternary InAlGaN heterostructures

H. Teisseyre, T. Suski, S. P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama, and Y. Aoyagi

Appl. Phys. Lett. 82, 1541 (2003); http://dx.doi.org/10.1063/1.1559948 (3 pages) | Cited 12 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A study of internal electric field contribution to the light emission mechanism of InAlGaN based multiquantum wells was performed. To determine the magnitude of the built-in electric field we employed: (i) theoretical estimation of the piezoelectric and spontaneous polarizations, (ii) analysis of the emission energy as a function of the quantum well width, (iii) hydrostatic pressure experiments, and finally (iv) measurements of photoluminescence decay. Performed calculations gave high magnitude of the built-in electric field. On the contrary, independently of the quantum well width the pressure shift of the light emission energy and the photoluminescence decay time showed almost constant values. These observations are interpreted as evidence of a lack of the built-in electric field in the used quaternary quantum wells. Possible reasons for the controversies between theory and experiment are suggested. © 2003 American Institute of Physics.
Show PACS
78.67.De Quantum wells
78.66.Fd III-V semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
77.65.-j Piezoelectricity and electromechanical effects
78.55.Cr III-V semiconductors
77.22.Ej Polarization and depolarization
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Polycrystalline silicon layer transfer by ion-cut

C. H. Yun, N. Quitoriano, and N. W. Cheung

Appl. Phys. Lett. 82, 1544 (2003); http://dx.doi.org/10.1063/1.1559655 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ion-cut polycrystalline silicon (polysilicon) layer transfer by thermal separation was demonstrated after observing hydrogen-induced surface blistering and direct bonding of a chemomechanically polished surface. After hydrogen implantation into a chemical-vapor deposited polysilicon wafer (the donor wafer), the wafer surface was polished for wafer bonding. The hydrogen-implanted and polished wafer was then bonded to a thermally oxidized silicon wafer (the handle wafer) by low-temperature wafer direct bonding. The bonded pair was then heated until hydrogen-induced silicon layer cleavage occurred along the hydrogen-implanted layer, resulting in the transfer of the polysilicon layer to the handle substrate. The transferred polysilicon surface had the same roughness as ion-cut single-crystal silicon layers. The layer transfer time of polysilicon was significantly reduced from that of single-crystal silicon, and had an activation energy nearly ten times lower than that of its single-crystal counterpart. © 2003 American Institute of Physics.
Show PACS
81.05.Cy Elemental semiconductors
81.65.Ps Polishing, grinding, surface finishing
61.72.Cc Kinetics of defect formation and annealing

Vacancies and voids in hydrogenated amorphous silicon

A. H. M. Smets, W. M. M. Kessels, and M. C. M. van de Sanden

Appl. Phys. Lett. 82, 1547 (2003); http://dx.doi.org/10.1063/1.1559657 (3 pages) | Cited 45 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network have been studied by means of infrared absorption spectroscopy. The results on the film mass density of a-Si:H deposited by means of an expanding thermal plasma reveal the presence of two distinct regions in terms of hydrogen content and microstructure: below approximately 14 at. % H a-Si:H contains predominantly divacancies decorated by hydrogen, above 14 at. % H a-Si:H contains microscopic voids. These two distinct regions provide additional information on the origin of the low and high hydride stretching modes at 1980–2010 and 2070–2100 cm−1, respectively. © 2003 American Institute of Physics.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.43.Dq Amorphous semiconductors, metals, and alloys
78.66.Jg Amorphous semiconductors; glasses
63.50.-x Vibrational states in disordered systems
78.66.Db Elemental semiconductors and insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Porous silicon free-standing coupled microcavities

M. Ghulinyan, C. J. Oton, Z. Gaburro, P. Bettotti, and L. Pavesi

Appl. Phys. Lett. 82, 1550 (2003); http://dx.doi.org/10.1063/1.1559949 (3 pages) | Cited 24 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the experimental characterization of porous silicon free-standing coupled microcavities. We have grown free-standing structures of up to 109 stacked layers. Free-standing structures are interesting because reflectance spectra can be measured on both sides of the samples. The comparison of reflectance spectra from the front and back side indicates that the porous silicon anodization process has a natural drift along the growth direction. However, we demonstrate that this drift can be compensated, showing a homogeneous structure of ten coupled microcavities, in which all ten resonance peaks are resolved in both transmission and reflection measurements. © 2003 American Institute of Physics.
Show PACS
81.65.-b Surface treatments
82.45.Vp Semiconductor materials in electrochemistry
82.45.Cc Anodic films
78.20.-e Optical properties of bulk materials and thin films

Photonic properties of an inverted face centered cubic opal under stretch and shear

V. Babin, P. Garstecki, and R. Hołyst

Appl. Phys. Lett. 82, 1553 (2003); http://dx.doi.org/10.1063/1.1558898 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present the results of numerical calculations of the dispersion relations for an inverted fcc opal structure subjected to a stretch and shear. We find that shearing of the crystal only lowers the gap width and slightly changes the midgap frequency. Interestingly, that in a large range of stretch amplitudes (up to 10%) the gap width is preserved and even slightly enhanced. The midgap frequency depends almost linearly on the stretch amplitude allowing for tuning an inverted fcc opal structure to a desired operational frequency. This last property may be important for the manufacturing process. © 2003 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study

M. Katsikini, F. Pinakidou, E. C. Paloura, and W. Wesch

Appl. Phys. Lett. 82, 1556 (2003); http://dx.doi.org/10.1063/1.1559650 (3 pages) | Cited 22 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 1014–1018 cm−2. It is found that two of the implantation-induced defects introduce characteristic resonances (hereafter called RL1 and RL2) in the near-edge x-ray absorption fine structure spectra. RL1 appears 1.7 eV below the absorption edge, its formation is independent of the projectile and the implantation dose, and is attributed to nitrogen interstitials. RL2, which appears at about 1.0 eV above the absorption edge, is generated when the dose exceeds 1016 cm−2 and is attributed to nitrogen dangling bonds. © 2003 American Institute of Physics.
Show PACS
71.55.Eq III-V semiconductors
78.70.Dm X-ray absorption spectra
52.77.Dq Plasma-based ion implantation and deposition
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
71.20.Nr Semiconductor compounds
back to top
RSS Feeds

Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Meng Tao, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, and Wiley P. Kirk

Appl. Phys. Lett. 82, 1559 (2003); http://dx.doi.org/10.1063/1.1559418 (3 pages) | Cited 35 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dangling bonds and surface states are inherent to semiconductor surfaces. By passivating dangling bonds on the silicon (001) surface with a monolayer of selenium, surface states are removed from the band gap. Magnesium contacts on selenium-passivated silicon (001) behave ohmically, as expected from the work function of magnesium and the electron affinity of silicon. After rapid thermal annealing and hot-plate annealing, magnesium contacts on selenium-passivated silicon (001) show better thermal stability than on hydrogen-passivated silicon (001), which is attributed to the suppression of silicide formation by selenium passivation. © 2003 American Institute of Physics.
Show PACS
81.65.Rv Passivation
81.05.Cy Elemental semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Cn Elemental semiconductors
68.47.Fg Semiconductor surfaces
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
73.40.Ns Metal-nonmetal contacts

Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z.-Q. Fang, D. C. Look, X.-L. Wang, Jung Han, F. A. Khan, and I. Adesida

Appl. Phys. Lett. 82, 1562 (2003); http://dx.doi.org/10.1063/1.1560562 (3 pages) | Cited 15 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By using deep-level transient spectroscopy (DLTS), deep centers have been characterized in unintentionally doped n-GaN samples grown by metalorganic chemical-vapor deposition and subjected to inductively coupled plasma reactive ion etching. At least six DLTS traps exist in the control sample: A1 (∼0.90 eV), Ax (∼0.72 eV), B (0.61 eV), C1 (0.44 eV), D (0.25 eV), and E1 (0.17 eV), with B dominant. Then, as the etching bias-voltage increases from −50 to −150 V, trap D increases strongly and becomes dominant, while traps A1, C (0.34 eV), and E1 increase at a slower rate. Trap B, on the other hand, is nearly unchanged. Previous electron-irradiation studies are consistent with the E1 traps being N-vacancy related. It is likely that the D traps are also, except that they are in the regions of dislocations. © 2003 American Institute of Physics.
Show PACS
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
61.72.J- Point defects and defect clusters

Vertical and lateral mobilities in n-(Ga, Mn)N

Jihyun Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada, and R. G. Wilson

Appl. Phys. Lett. 82, 1565 (2003); http://dx.doi.org/10.1063/1.1559442 (3 pages) | Cited 9 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lateral electron mobilities in 0.2-μm-thick n-(Ga, Mn)N films were obtained from Hall measurements, producing values of 116 ∼ 102 cm2/V s in the temperature range from 298 to 373 K. These values are comparable to, but slightly lower than, electron mobilities in n-GaN of the same electron concentration. By sharp contrast, analysis of the reverse saturation current in mesa Schottky diodes fabricated in the n-(Ga, Mn)N show vertical electron mobilities of 840 ∼ 336 cm2/V s in the temperature range from 298 to 373 K. This is consistent with a reduction in electron scattering by charged dislocations for vertical transport geometries [M. Misra, A. V. Sampath, and T. D. Moustakas, Appl. Phys. Lett. 76, 1045 (2000)]. © 2003 American Institute of Physics.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors

Shot noise in negative-differential-conductance devices

W. Song, E. E. Mendez, V. Kuznetsov, and B. Nielsen

Appl. Phys. Lett. 82, 1568 (2003); http://dx.doi.org/10.1063/1.1558953 (3 pages) | Cited 16 times

Online Publication Date: 4 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current–voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2eI in the NDC region, that of the latter device remained 2eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices. © 2003 American Institute of Physics.
Show PACS
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close