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10 Mar 2003

Volume 82, Issue 10, pp. 1497-1639

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Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages)

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson
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Oxygen induced p-doping of α-nickel phthalocyanine vacuum sublimed films: Implication for its use in organic photovoltaics

Thomas D. Anthopoulos and Torfeh S. Shafai

Appl. Phys. Lett. 82, 1628 (2003); http://dx.doi.org/10.1063/1.1559649 (3 pages) | Cited 29 times

Online Publication Date: 4 March 2003

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The effects of oxygen doping on the charge transport and photovoltaic properties of α-nickel phthalocyanine (α-NiPc) based devices are investigated using in situ and ex situ I–V measurements. I–V characteristics for devices employing gold contacts indicate ohmic conduction at low voltages, followed by space-charge-limited conduction in higher fields. Upon exposure of NiPc to dry air an increase in the hole concentration (p0) from 8.5×1010 to 2.6×1015 m−3 is observed. When the top gold ohmic cathode is replaced by lead, Schottky type behavior is evident with the junction exhibiting photovoltaic effect. The energy conversion efficiency of the cell increases following exposure to oxygen. These results suggest that fabrication of air stable electronic devices based on NiPc is feasible. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.50.Pz Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ph Polymers; organic compounds
73.30.+y Surface double layers, Schottky barriers, and work functions
73.50.Fq High-field and nonlinear effects
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