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10 Mar 2003

Volume 82, Issue 10, pp. 1497-1639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages)

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson
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Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Meng Tao, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, and Wiley P. Kirk

Appl. Phys. Lett. 82, 1559 (2003); http://dx.doi.org/10.1063/1.1559418 (3 pages) | Cited 35 times

Online Publication Date: 4 March 2003

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Dangling bonds and surface states are inherent to semiconductor surfaces. By passivating dangling bonds on the silicon (001) surface with a monolayer of selenium, surface states are removed from the band gap. Magnesium contacts on selenium-passivated silicon (001) behave ohmically, as expected from the work function of magnesium and the electron affinity of silicon. After rapid thermal annealing and hot-plate annealing, magnesium contacts on selenium-passivated silicon (001) show better thermal stability than on hydrogen-passivated silicon (001), which is attributed to the suppression of silicide formation by selenium passivation. © 2003 American Institute of Physics.
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81.65.Rv Passivation
81.05.Cy Elemental semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Cn Elemental semiconductors
68.47.Fg Semiconductor surfaces
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
73.40.Ns Metal-nonmetal contacts

Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z.-Q. Fang, D. C. Look, X.-L. Wang, Jung Han, F. A. Khan, and I. Adesida

Appl. Phys. Lett. 82, 1562 (2003); http://dx.doi.org/10.1063/1.1560562 (3 pages) | Cited 15 times

Online Publication Date: 4 March 2003

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By using deep-level transient spectroscopy (DLTS), deep centers have been characterized in unintentionally doped n-GaN samples grown by metalorganic chemical-vapor deposition and subjected to inductively coupled plasma reactive ion etching. At least six DLTS traps exist in the control sample: A1 (∼0.90 eV), Ax (∼0.72 eV), B (0.61 eV), C1 (0.44 eV), D (0.25 eV), and E1 (0.17 eV), with B dominant. Then, as the etching bias-voltage increases from −50 to −150 V, trap D increases strongly and becomes dominant, while traps A1, C (0.34 eV), and E1 increase at a slower rate. Trap B, on the other hand, is nearly unchanged. Previous electron-irradiation studies are consistent with the E1 traps being N-vacancy related. It is likely that the D traps are also, except that they are in the regions of dislocations. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
61.72.J- Point defects and defect clusters

Vertical and lateral mobilities in n-(Ga, Mn)N

Jihyun Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada, and R. G. Wilson

Appl. Phys. Lett. 82, 1565 (2003); http://dx.doi.org/10.1063/1.1559442 (3 pages) | Cited 9 times

Online Publication Date: 4 March 2003

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Lateral electron mobilities in 0.2-μm-thick n-(Ga, Mn)N films were obtained from Hall measurements, producing values of 116 ∼ 102 cm2/V s in the temperature range from 298 to 373 K. These values are comparable to, but slightly lower than, electron mobilities in n-GaN of the same electron concentration. By sharp contrast, analysis of the reverse saturation current in mesa Schottky diodes fabricated in the n-(Ga, Mn)N show vertical electron mobilities of 840 ∼ 336 cm2/V s in the temperature range from 298 to 373 K. This is consistent with a reduction in electron scattering by charged dislocations for vertical transport geometries [M. Misra, A. V. Sampath, and T. D. Moustakas, Appl. Phys. Lett. 76, 1045 (2000)]. © 2003 American Institute of Physics.
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72.20.Fr Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors

Shot noise in negative-differential-conductance devices

W. Song, E. E. Mendez, V. Kuznetsov, and B. Nielsen

Appl. Phys. Lett. 82, 1568 (2003); http://dx.doi.org/10.1063/1.1558953 (3 pages) | Cited 16 times

Online Publication Date: 4 March 2003

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We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current–voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2eI in the NDC region, that of the latter device remained 2eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices. © 2003 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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