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10 Mar 2003

Volume 82, Issue 10, pp. 1497-1639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages)

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson
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Fiber-taper-coupled L-band Er3+-doped tellurite glass microsphere laser

Xiang Peng, Feng Song, Shibin Jiang, N. Peyghambarian, Makoto Kuwata-Gonokami, and Lei Xu

Appl. Phys. Lett. 82, 1497 (2003); http://dx.doi.org/10.1063/1.1559653 (3 pages) | Cited 25 times

Online Publication Date: 4 March 2003

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Er3+-doped tellurite glass microspheres were fabricated. The microspheres were made by a spin method. A tapered fiber was used to couple the pump into the microsphere and couple out the laser. L-band microsphere laser is demonstrated. This miniature Er3+-doped tellurite glass microsphere laser can be used in photonic microdevices. © 2003 American Institute of Physics.
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42.55.Wd Fiber lasers
42.70.Ce Glasses, quartz

The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

Nelson Tansu and Luke J. Mawst

Appl. Phys. Lett. 82, 1500 (2003); http://dx.doi.org/10.1063/1.1558218 (3 pages) | Cited 34 times

Online Publication Date: 4 March 2003

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We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Hs Quantum wells

Simulated causal subwavelength focusing by a negative refractive index slab

Steven A. Cummer

Appl. Phys. Lett. 82, 1503 (2003); http://dx.doi.org/10.1063/1.1554778 (3 pages) | Cited 56 times

Online Publication Date: 4 March 2003

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Subwavelength electromagnetic focusing by a negative refractive index slab is shown to occur in a full wave numerical simulation of a causal, physically realizable negative index material. Limitations on the observability of this effect in simulations and experiments are discussed. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.25.Gy Edge and boundary effects; reflection and refraction

Limitations on subdiffraction imaging with a negative refractive index slab

David R. Smith, David Schurig, Marshall Rosenbluth, Sheldon Schultz, S. Anantha Ramakrishna, and John B. Pendry

Appl. Phys. Lett. 82, 1506 (2003); http://dx.doi.org/10.1063/1.1554779 (3 pages) | Cited 179 times

Online Publication Date: 4 March 2003

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A planar slab of material, for which both the permittivity and permeability have the values of −1, can bring not only the propagating fields associated with a source to a focus, but can also refocus the nonpropagating near fields, thereby achieving resolution beyond the diffraction limit. We study the sensitivity of this subwavelength focus to the slab material properties and periodicity, and note the connection to slab surface plasmon modes. We conclude that significant subwavelength resolution is achievable with a single negative index slab, but only over a restrictive range of parameters. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.25.Gy Edge and boundary effects; reflection and refraction

Generating visible single photons on demand with single InP quantum dots

V. Zwiller, T. Aichele, W. Seifert, J. Persson, and O. Benson

Appl. Phys. Lett. 82, 1509 (2003); http://dx.doi.org/10.1063/1.1558952 (3 pages) | Cited 47 times

Online Publication Date: 4 March 2003

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We present photon correlation measurements performed on a device based on single InP quantum dots. The device consists of a 400 nm thick membrane containing a low density of quantum dots on a metal mirror. Measurements done under continuous excitation reveal a very pronounced antibunching dip while measurements done under pulsed excitation enable the generation of single photons on demand at the optimum wavelength for silicon-based single-photon detectors. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.50.Dv Quantum state engineering and measurements

Tailoring the photonic band gap of a porous silicon dielectric mirror

V. Agarwal and J. A. del Río

Appl. Phys. Lett. 82, 1512 (2003); http://dx.doi.org/10.1063/1.1559420 (3 pages) | Cited 52 times

Online Publication Date: 4 March 2003

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A systematic method to fabricate porous-silicon one-dimensional photonic crystals has been engineered to have a photonic bandwidth up to 2000 nm. The observation of the tailorability of the photonic band gap (PBG) underscores the requirement of the large refractive index contrast for making broad PBG structures. In this letter, we present the fabrication and characteristics of such structures that may be promising structures for a large variety of applications. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
81.05.Rm Porous materials; granular materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
81.05.Cy Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
42.79.Wc Optical coatings
42.79.Bh Lenses, prisms and mirrors
81.65.Cf Surface cleaning, etching, patterning

Integrated optical distributed feedback laser with Ti:Fe:Er:LiNbO3 waveguide

B. K. Das, R. Ricken, and W. Sohler

Appl. Phys. Lett. 82, 1515 (2003); http://dx.doi.org/10.1063/1.1559443 (3 pages) | Cited 30 times

Online Publication Date: 4 March 2003

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A distributed feedback (DFB) laser in LiNbO3 is demonstrated using a Ti:Fe:Er:LiNbO3 waveguide with a holographically written photorefractive grating. The DFB laser was combined with a waveguide amplifier on the same substrate. Up to 1.12 mW of output power at λ = 1531.35 nm was emitted by the laser/amplifier combination at a pump power level of 240 mW (λP = 1480 nm). The emission spectrum consists of the two lowest-order DFB modes of about 3.9 GHz frequency spacing. Whereas the measured threshold gain of ∼ 3.3 dB/cm approximately agreed with the modeling results, the observed mode spacing was clearly smaller than calculated. © 2003 American Institute of Physics.
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42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.40.Eq Holographic optical elements; holographic gratings
42.65.Yj Optical parametric oscillators and amplifiers
85.30.De Semiconductor-device characterization, design, and modeling

High-performance continuous-wave operation of superlattice terahertz quantum-cascade lasers

Rüdeger Köhler, Alessandro Tredicucci, Fabio Beltram, Harvey E. Beere, Edmund H. Linfield, A. Giles Davies, David A. Ritchie, Sukhdeep S. Dhillon, and Carlo Sirtori

Appl. Phys. Lett. 82, 1518 (2003); http://dx.doi.org/10.1063/1.1559419 (3 pages) | Cited 28 times

Online Publication Date: 4 March 2003

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The cw operation of chirped-superlattice quantum-cascade lasers emitting at λ ∼ 67 μm (4.4 THz) is analyzed. Collected (min. 33% efficiency) output powers of 4 mW per facet are measured at liquid helium temperatures and a maximum operating temperature of 48 K is reached. Under pulsed excitation at duty cycles of 0.5%–1%, slightly higher (10%) peak powers are reached, and the device can be operated up to 67 K. Low threshold current densities of 165 and 185 A cm−2 are observed in pulsed and cw operation, respectively. The operation of the laser is examined using the Hakki–Paoli technique to estimate the net gain of the structure. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Approach for imaging optical super-resolution based on Sb films

Ding Rong Ou, Jing Zhu, and Jia Hao Zhao

Appl. Phys. Lett. 82, 1521 (2003); http://dx.doi.org/10.1063/1.1555707 (3 pages) | Cited 5 times

Online Publication Date: 4 March 2003

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Super-resolution technology has been applied to overcome the optical diffraction limit in recent years. In this work, optical super resolution based on Sb films has been studied. Experimental results show that the amorphous Sb–SR will considerably concentrate the energy into the center of the laser beam, while the crystal Sb–SR will not. Considering Sb as a semiconductor with a small energy gap, a three-order nonlinear response of surface plasmons is deduced to explain the phenomenon. Estimation is made and the calculated results are in agreement with the experimental results. © 2003 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.30.Va Image forming and processing
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes

G. M. Lewis, P. M. Smowton, P. Blood, and W. W. Chow

Appl. Phys. Lett. 82, 1524 (2003); http://dx.doi.org/10.1063/1.1559658 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

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Polarization sensitive measurements, in real units, of gain and spontaneous emission of GaInP lasers with three strain and well-width combinations allow us to isolate the intrinsic effects of strain when the well width is also adjusted to maintain a fixed output wavelength. Varying tensile strain and well width, for 635 nm operation, have no effect on transverse magnetic polarized recombination at fixed gain, which is consistent with a constant effective mass in the uppermost valence band, but the total transparency current decreases from 116 to 83 A cm−2 due to increasing separation of light and heavy hole bands. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
68.65.Fg Quantum wells

Effect of numerical aperture on the spectral splitting feature near phase singularities of focused waves

Djenan Ganic, James W. M. Chon, and Min Gu

Appl. Phys. Lett. 82, 1527 (2003); http://dx.doi.org/10.1063/1.1560555 (2 pages) | Cited 10 times

Online Publication Date: 4 March 2003

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We demonstrate that because of the depolarization effect associated with a high-numerical-aperture lens, the recently predicted spectral splitting phenomenon near phase singularities of focused waves [G. Gbur, T. D. Visser, and E. Wolf, Phys. Rev. Lett. 88, 013901 (2002)] disappears when the numerical aperture is higher than critical values that are different between the incident polarization direction and the axial direction. © 2003 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.30.-d Imaging and optical processing
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