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10 Mar 2003

Volume 82, Issue 10, pp. 1497-1639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages)

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson
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Combined scanning electrochemical atomic force microscopy for tapping mode imaging

A. Kueng, C. Kranz, B. Mizaikoff, A. Lugstein, and E. Bertagnolli

Appl. Phys. Lett. 82, 1592 (2003); http://dx.doi.org/10.1063/1.1559652 (3 pages) | Cited 24 times

Online Publication Date: 4 March 2003

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With the integration of submicro- and nanoelectrodes into atomic force microscopy (AFM) tips using microfabrication techniques, an elegant approach combining scanning electrochemical microscopy (SECM) with atomic force microscopy has recently been demonstrated. Simultaneous imaging of topography and electrochemistry at a sample surface in AFM tapping mode with integrated SECM–AFM cantilevers oscillated at or near their resonance frequency is shown. In contrast to contact mode AFM imaging frictional forces at the sample surface are minimized. Hence, topographical and electrochemical information of soft surfaces (e.g., biological species) can be obtained. © 2003 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2

C. Garcia, B. Garrido, P. Pellegrino, R. Ferre, J. A. Moreno, J. R. Morante, L. Pavesi, and M. Cazzanelli

Appl. Phys. Lett. 82, 1595 (2003); http://dx.doi.org/10.1063/1.1558894 (3 pages) | Cited 64 times

Online Publication Date: 4 March 2003

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Photoluminescence lifetimes and optical absorption cross sections of Si nanocrystals embedded in SiO2 have been studied as a function of their average size and emission energy. The lifetimes span from 20 μs for the smallest sizes (2.5 nm) to more than 200 μs for the largest ones (7 nm). The passivation of nonradiative interface states by hydrogenation increases the lifetime for a given size. In contrast with porous Si, the cross section per nanocrystal shows a nonmonotonic behavior with emission energy. In fact, although the density of states above the gap increases for larger nanocrystals, this trend is compensated by a stronger reduction of the oscillator strength, providing an overall reduction of the absorption cross section per nanocrystal for increasing size. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
78.55.Ap Elemental semiconductors
73.20.At Surface states, band structure, electron density of states
73.22.-f Electronic structure of nanoscale materials and related systems

The use of capillary force for fabricating probe tips for scattering-type near-field scanning optical microscopes

Yoshimasa Kawata, Seiji Urahama, Manambu Murakami, and Futoshi Iwata

Appl. Phys. Lett. 82, 1598 (2003); http://dx.doi.org/10.1063/1.1559441 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

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We present a fabrication technique of a probe tip for scattering-type near-field microscopes. In the technique, capillary force is used to attach a metal particle at the apex of micropipettes. We can attach various kinds of particles, such as fluorescent particles, semiconductor particles, nonlinear materials, as well as metal particles. We have attached particles smaller than 180 nm in diameter. © 2003 American Institute of Physics.
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81.16.Ta Atom manipulation
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.79.Fc Near-field scanning optical microscopes

Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh

Appl. Phys. Lett. 82, 1601 (2003); http://dx.doi.org/10.1063/1.1558216 (3 pages) | Cited 57 times

Online Publication Date: 4 March 2003

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Dislocation-free vertical GaN pillars in nanoscale were grown on Si (111) surface through self-assembly by molecular-beam epitaxy. No extra catalytic or nanostructural assistance has been employed. These nanorods have a lateral dimension from ≲10 nm to ∼800 nm and a height of ≲50 nm to ≳3 μm protruding above the film, depending on the growth parameters. The top view of the nanorods has a hexagonal shape from scanning electron microscopy. Transmission electron microscopy shows that the nanorods are hexagonal, single crystal GaN along the c-axis. An extra peak at 363 nm originated from nanorods was observed in photoluminescence spectra at 66 K, which is ascribed to the surface states according to the results of surface passivation. Micro-Raman spectroscopy on a single nanorod reveals E1 and E2 modes at 559.0 and 567.4 cm−1, respectively. Large strain was observed in both the transmission electron micrograph and the Raman shift. A possible growth mechanism is discussed. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Cr III-V semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
73.22.-f Electronic structure of nanoscale materials and related systems
81.65.Rv Passivation
78.30.Fs III-V and II-VI semiconductors

Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

E. L. Colla, I. Stolichnov, P. E. Bradely, and N. Setter

Appl. Phys. Lett. 82, 1604 (2003); http://dx.doi.org/10.1063/1.1559951 (3 pages) | Cited 27 times

Online Publication Date: 4 March 2003

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The direct observation of blocked polarization domains at the electrode–ferroelectric interface of electrically fatigued ferroelectric films is reported. Blocked nanodomains are believed to be the origin of polarization fatigue in ferroelectric nonvolatile memories but have not been directly observed so far due to the required upper metal electrode which impedes the direct access to the surface of the ferroelectric film. This problem has been solved by using low temperature melting metal as removable top electrode. After fatigue and subsequent top electrode removal it was possible to observe the polarization state of the fatigued capacitor and its depth profile by means of detection of the local piezoelectric activity with a conductive atomic force microscope tip. Blocked polarization domains with opposite polarization compared to the film body could be directly observed at the upper ferroelectrics surface. © 2003 American Institute of Physics.
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84.32.Tt Capacitors
85.50.Gk Non-volatile ferroelectric memories
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
84.30.Sk Pulse and digital circuits
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis

Ultraviolet laser treatment of multiwall carbon nanotubes grown at low temperature

J. S. Kim, K. S. Ahn, C. O. Kim, and J. P. Hong

Appl. Phys. Lett. 82, 1607 (2003); http://dx.doi.org/10.1063/1.1559654 (3 pages) | Cited 28 times

Online Publication Date: 4 March 2003

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Simple laser irradiation of well-aligned multiwall carbon nanotubes (MWCNTs) was performed to intentionally modify structural defects and to ablate possible contamination of the MWCNTs. Scanning electron microscopy and transmission electron microscopy confirmed the clear presence of the MWCNTs with open tips. A Raman spectra exhibited a decrease in an intensity ratio (ID/IG) of 1352 cm−1 (D band) over 1583 cm−1 (G band) peaks by significantly reducing the amorphous carbon phases of D band peaks. The structural improvement in the MWCNTs after optimum laser exposure resulted in a reduction of the turn-on voltage from 1.0 to 0.6 V/μm and an increase in the emission current. © 2003 American Institute of Physics.
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61.82.Rx Nanocrystalline materials
61.46.-w Structure of nanoscale materials
78.67.Ch Nanotubes
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.Hv Other nonmetallic inorganics

Nanoscale molecular-switch devices fabricated by imprint lithography

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson

Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages) | Cited 33 times

Online Publication Date: 4 March 2003

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Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable current–voltage characteristics with high on–off ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.07.Nb Molecular nanostructures
85.35.-p Nanoelectronic devices
85.65.+h Molecular electronic devices
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.40.Sx Metal-semiconductor-metal structures
85.30.-z Semiconductor devices
84.32.Dd Connectors, relays, and switches
85.40.Hp Lithography, masks and pattern transfer
73.63.Rt Nanoscale contacts

In2O3 nanowires as chemical sensors

Chao Li, Daihua Zhang, Xiaolei Liu, Song Han, Tao Tang, Jie Han, and Chongwu Zhou

Appl. Phys. Lett. 82, 1613 (2003); http://dx.doi.org/10.1063/1.1559438 (3 pages) | Cited 168 times

Online Publication Date: 4 March 2003

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We present an approach to use individual In2O3 nanowire transistors as chemical sensors working at room temperature. Upon exposure to a small amount of NO2 or NH3, the nanowire transistors showed a decrease in conductance up to six or five orders of magnitude and also substantial shifts in the threshold gate voltage. These devices exhibited significantly improved chemical sensing performance compared to existing solid-state sensors in many aspects, such as the sensitivity, the selectivity, the response time, and the lowest detectable concentrations. Furthermore, the recovery time of our devices can be shortened to just 30 s by illuminating the devices with UV light in vacuum. © 2003 American Institute of Physics.
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85.35.-p Nanoelectronic devices
85.65.+h Molecular electronic devices
81.07.Vb Quantum wires
85.30.Tv Field effect devices
72.80.Jc Other crystalline inorganic semiconductors
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
61.46.-w Structure of nanoscale materials
73.21.Hb Quantum wires
73.63.Nm Quantum wires
82.80.-d Chemical analysis and related physical methods of analysis

A slit-type atom deflector with near-field light

Kouki Totsuka, Haruhiko Ito, Kiichi Suzuki, Kazuhiro Yamamoto, Motoichi Ohtsu, and Takashi Yatsui

Appl. Phys. Lett. 82, 1616 (2003); http://dx.doi.org/10.1063/1.1558222 (3 pages) | Cited 7 times

Online Publication Date: 4 March 2003

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We developed a near-field optical deflector for precise direction control of atomic motion using a dipole force. The blue-detuned, near-field light used to deflect atoms was generated near the edge of a 100-nm-wide slit and had a spatial distribution of 126 nm at a distance of 10 nm from the top edge. The deflection angle for a Rb atom was a function of light intensity, frequency detuning, and atomic velocity. © 2003 American Institute of Physics.
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03.75.Be Atom and neutron optics
37.10.De Atom cooling methods
37.10.Gh Atom traps and guides
37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Visible photoluminescence from nanostructured Si-based layers produced by air optical breakdown on silicon

A. V. Kabashin and M. Meunier

Appl. Phys. Lett. 82, 1619 (2003); http://dx.doi.org/10.1063/1.1557752 (3 pages) | Cited 17 times

Online Publication Date: 4 March 2003

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Pulsed radiation of CO2 laser has been used to produce an optical breakdown on a silicon target in atmospheric air. After several breakdown initiations near the threshold of plasma production, a highly porous layer was formed under the radiation spot on the silicon surface. The fabricated layers presented the porosity of 75%–80% and were formed of silicon nanocrystals imbedded in SiO2 matrix. They exhibited strong photoluminescence (PL) around 2.0 eV, which was stable to a prolonged continuous illumination of samples. Possible mechanisms of nanostructure formation and PL origin are discussed. © 2003 American Institute of Physics.
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78.55.Mb Porous materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
68.47.Fg Semiconductor surfaces
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.05.Rm Porous materials; granular materials
77.22.Jp Dielectric breakdown and space-charge effects
79.20.Ds Laser-beam impact phenomena
78.55.Ap Elemental semiconductors

Molecular alignment enhancement phenomenon of polymer formed from a liquid crystal monomer in a liquid crystal solvent

Hideo Fujikake, Takeshi Murashige, Hiroto Sato, Masahiro Kawakita, and Hiroshi Kikuchi

Appl. Phys. Lett. 82, 1622 (2003); http://dx.doi.org/10.1063/1.1558221 (3 pages) | Cited 9 times

Online Publication Date: 4 March 2003

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We report an abnormal alignment enhancement phenomenon of polymer molecules. The alignment order of a rigid-skeleton polymer made from a liquid crystalline monomer in a low-molecular-weight liquid crystal solvent was drastically enhanced with increasing temperature, even though the alignment order of the solution of the liquid crystal and monomer decreased. From polymer molecular alignment observations using polarizing Raman scattering microscopy, it was found that the polymer alignment order was three times greater than that of the original aligned monomer and polymer. This super alignment technique of polymer using a molecular-scaled self-assembly mechanism is applicable to the formation of electrically and/or optically functional nanopolymer wires. © 2003 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.35.-x Polymers: properties; reactions; polymerization
36.20.-r Macromolecules and polymer molecules
78.30.Jw Organic compounds, polymers
61.46.-w Structure of nanoscale materials
81.16.Fg Supramolecular and biochemical assembly
81.16.Be Chemical synthesis methods
81.16.Dn Self-assembly
81.05.Cy Elemental semiconductors

Structural and mechanical properties of nanostructured metalloceramic coatings on cobalt chrome alloys

Shane A. Catledge, Yogesh K. Vohra, S. Woodard, and R. Venugopalan

Appl. Phys. Lett. 82, 1625 (2003); http://dx.doi.org/10.1063/1.1560862 (3 pages) | Cited 6 times

Online Publication Date: 4 March 2003

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A functionally graded nanocrystalline metalloceramic coating on cobalt–chrome alloys was investigated with thin-film x-ray diffraction (XRD), nanoindentation, and scratch adhesion testing. The gradual transition in bonding from metallic to predominantly covalent along with a nanocrystalline grain structure provides a unique material system with excellent strength, toughness, and adhesion properties. XRD analysis of the (CrTiN) coating suggests a cubic sodium chloride phase structure with a = 4.2169±0.0035 Å. Nanoindentation measurements of the coating result in a hardness of 27 GPa and Young’s modulus of 320 GPa. The graded metallic/covalent nature of the coating with high plasticity also results in excellent film/substrate adhesion as shown by an average critical force of 44±5 N in scratch testing. © 2003 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear
68.60.Bs Mechanical and acoustical properties
81.65.-b Surface treatments
87.85.J- Biomaterials
61.46.-w Structure of nanoscale materials
62.25.-g Mechanical properties of nanoscale systems
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
68.35.Np Adhesion
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
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