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10 Mar 2003

Volume 82, Issue 10, pp. 1497-1639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1610 (2003); http://dx.doi.org/10.1063/1.1559439 (3 pages)

Yong Chen, Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, and Erik Anderson
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Structural evolution of crystalline polymer latex films: Propagating and confined acoustic modes

Matteo Pierno, Carlo S. Casari, Roberto Piazza, and Carlo E. Bottani

Appl. Phys. Lett. 82, 1532 (2003); http://dx.doi.org/10.1063/1.1558972 (3 pages)

Online Publication Date: 4 March 2003

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Structural evolution of polytetrafluoroethylene latex polymer films has been studied by Brillouin light scattering and atomic force microscopy (AFM). Using a tunable sintering process, we have controlled the degree of particle connectivity yielding a crossover in the behavior of acoustic excitations ranging from confined modes to propagating phonons. This transition has been correlated also to the surface morphology by AFM. Fully sintered films are characterized by extended “fibrillar” crystalline regions embedded in a disordered matrix, which still retain features of the original particulate structure. © 2003 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
68.37.Ps Atomic force microscopy (AFM)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
78.66.Qn Polymers; organic compounds

Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well optical modulators

X. T. Wang and F. C. Jain

Appl. Phys. Lett. 82, 1535 (2003); http://dx.doi.org/10.1063/1.1559645 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2003

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The effect of intrinsic strain on the surface acoustic wave (SAW)-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well (MQW) optical modulators is investigated. We solve the exciton equation in momentum space using a two-dimensional quadrature method to obtain the birefringence Δn by the SAW induced strain. Our calculations are in good agreement with the experimental results in AlGaAs–GaAs and InGaAs–GaAs MQWs. Intrinsic strain influences the band mixing of valance subbands in quantum wells in the presence of asymmetric strain. We have shown that birefringence (Δn∼0.06) is significantly higher in tensile strained (ε∼0.7%) InGaAsP–InP MQWs than in compressively strained In0.21Ga0.79As–GaAs MQW devices. © 2003 American Institute of Physics.
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42.79.Jq Acousto-optical devices
42.79.Hp Optical processors, correlators, and modulators
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.65.Fg Quantum wells
73.21.Fg Quantum wells
78.20.Fm Birefringence
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
68.35.Iv Acoustical properties
71.35.-y Excitons and related phenomena

Faraday effect of photonic crystals

C. Koerdt, G. L. J. A. Rikken, and E. P. Petrov

Appl. Phys. Lett. 82, 1538 (2003); http://dx.doi.org/10.1063/1.1558954 (3 pages) | Cited 24 times

Online Publication Date: 4 March 2003

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We measured Faraday rotation in three-dimensional photonic colloidal crystals impregnated with a Faraday active, transparent liquid. The Faraday effect was found to strongly increase inside the stop band, whereas outside it follows the normal spectral behavior of a paramagnetic dielectric with an effective Verdet constant equal to the product of the liquid’s Verdet constant and its filling fraction. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.20.Ls Magneto-optical effects
78.40.-q Absorption and reflection spectra: visible and ultraviolet
82.70.Dd Colloids

Determination of built-in electric fields in quaternary InAlGaN heterostructures

H. Teisseyre, T. Suski, S. P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama, and Y. Aoyagi

Appl. Phys. Lett. 82, 1541 (2003); http://dx.doi.org/10.1063/1.1559948 (3 pages) | Cited 12 times

Online Publication Date: 4 March 2003

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A study of internal electric field contribution to the light emission mechanism of InAlGaN based multiquantum wells was performed. To determine the magnitude of the built-in electric field we employed: (i) theoretical estimation of the piezoelectric and spontaneous polarizations, (ii) analysis of the emission energy as a function of the quantum well width, (iii) hydrostatic pressure experiments, and finally (iv) measurements of photoluminescence decay. Performed calculations gave high magnitude of the built-in electric field. On the contrary, independently of the quantum well width the pressure shift of the light emission energy and the photoluminescence decay time showed almost constant values. These observations are interpreted as evidence of a lack of the built-in electric field in the used quaternary quantum wells. Possible reasons for the controversies between theory and experiment are suggested. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.66.Fd III-V semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
77.65.-j Piezoelectricity and electromechanical effects
78.55.Cr III-V semiconductors
77.22.Ej Polarization and depolarization
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Polycrystalline silicon layer transfer by ion-cut

C. H. Yun, N. Quitoriano, and N. W. Cheung

Appl. Phys. Lett. 82, 1544 (2003); http://dx.doi.org/10.1063/1.1559655 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

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Ion-cut polycrystalline silicon (polysilicon) layer transfer by thermal separation was demonstrated after observing hydrogen-induced surface blistering and direct bonding of a chemomechanically polished surface. After hydrogen implantation into a chemical-vapor deposited polysilicon wafer (the donor wafer), the wafer surface was polished for wafer bonding. The hydrogen-implanted and polished wafer was then bonded to a thermally oxidized silicon wafer (the handle wafer) by low-temperature wafer direct bonding. The bonded pair was then heated until hydrogen-induced silicon layer cleavage occurred along the hydrogen-implanted layer, resulting in the transfer of the polysilicon layer to the handle substrate. The transferred polysilicon surface had the same roughness as ion-cut single-crystal silicon layers. The layer transfer time of polysilicon was significantly reduced from that of single-crystal silicon, and had an activation energy nearly ten times lower than that of its single-crystal counterpart. © 2003 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Ps Polishing, grinding, surface finishing
61.72.Cc Kinetics of defect formation and annealing

Vacancies and voids in hydrogenated amorphous silicon

A. H. M. Smets, W. M. M. Kessels, and M. C. M. van de Sanden

Appl. Phys. Lett. 82, 1547 (2003); http://dx.doi.org/10.1063/1.1559657 (3 pages) | Cited 45 times

Online Publication Date: 4 March 2003

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The hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network have been studied by means of infrared absorption spectroscopy. The results on the film mass density of a-Si:H deposited by means of an expanding thermal plasma reveal the presence of two distinct regions in terms of hydrogen content and microstructure: below approximately 14 at. % H a-Si:H contains predominantly divacancies decorated by hydrogen, above 14 at. % H a-Si:H contains microscopic voids. These two distinct regions provide additional information on the origin of the low and high hydride stretching modes at 1980–2010 and 2070–2100 cm−1, respectively. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.43.Dq Amorphous semiconductors, metals, and alloys
78.66.Jg Amorphous semiconductors; glasses
63.50.-x Vibrational states in disordered systems
78.66.Db Elemental semiconductors and insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Porous silicon free-standing coupled microcavities

M. Ghulinyan, C. J. Oton, Z. Gaburro, P. Bettotti, and L. Pavesi

Appl. Phys. Lett. 82, 1550 (2003); http://dx.doi.org/10.1063/1.1559949 (3 pages) | Cited 24 times

Online Publication Date: 4 March 2003

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We report the experimental characterization of porous silicon free-standing coupled microcavities. We have grown free-standing structures of up to 109 stacked layers. Free-standing structures are interesting because reflectance spectra can be measured on both sides of the samples. The comparison of reflectance spectra from the front and back side indicates that the porous silicon anodization process has a natural drift along the growth direction. However, we demonstrate that this drift can be compensated, showing a homogeneous structure of ten coupled microcavities, in which all ten resonance peaks are resolved in both transmission and reflection measurements. © 2003 American Institute of Physics.
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81.65.-b Surface treatments
82.45.Vp Semiconductor materials in electrochemistry
82.45.Cc Anodic films
78.20.-e Optical properties of bulk materials and thin films

Photonic properties of an inverted face centered cubic opal under stretch and shear

V. Babin, P. Garstecki, and R. Hołyst

Appl. Phys. Lett. 82, 1553 (2003); http://dx.doi.org/10.1063/1.1558898 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2003

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We present the results of numerical calculations of the dispersion relations for an inverted fcc opal structure subjected to a stretch and shear. We find that shearing of the crystal only lowers the gap width and slightly changes the midgap frequency. Interestingly, that in a large range of stretch amplitudes (up to 10%) the gap width is preserved and even slightly enhanced. The midgap frequency depends almost linearly on the stretch amplitude allowing for tuning an inverted fcc opal structure to a desired operational frequency. This last property may be important for the manufacturing process. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study

M. Katsikini, F. Pinakidou, E. C. Paloura, and W. Wesch

Appl. Phys. Lett. 82, 1556 (2003); http://dx.doi.org/10.1063/1.1559650 (3 pages) | Cited 22 times

Online Publication Date: 4 March 2003

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We apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 1014–1018 cm−2. It is found that two of the implantation-induced defects introduce characteristic resonances (hereafter called RL1 and RL2) in the near-edge x-ray absorption fine structure spectra. RL1 appears 1.7 eV below the absorption edge, its formation is independent of the projectile and the implantation dose, and is attributed to nitrogen interstitials. RL2, which appears at about 1.0 eV above the absorption edge, is generated when the dose exceeds 1016 cm−2 and is attributed to nitrogen dangling bonds. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.70.Dm X-ray absorption spectra
52.77.Dq Plasma-based ion implantation and deposition
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
71.20.Nr Semiconductor compounds
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