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Applied Physics Letters / Volume 82 / Issue 11 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 82, 1766 (2003); http://dx.doi.org/10.1063/1.1561571 (3 pages)

Highly anisotropic morphologies of GaAs(331) surfaces

V. R. Yazdanpanah, Z. M. Wang, and G. J. Salamo

Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701

(Received 31 May 2002; accepted 24 January 2003)

The surface morphology of the GaAs(331) surface was investigated by in situ reflection high-energy electron diffraction and scanning tunneling microscopy. It was found, that GaAs(331) A and B surfaces are both faceted on a nanometer scale, containing (110) and (111) facets which are atomically resolved in real space. The resulting highly anisotropic ridge-like surfaces can prove useful in the fabrication of quantum wire structures. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, surface morphology, reflection high energy electron diffraction, scanning tunnelling microscopy, semiconductor quantum wires, III-V semiconductors

PACS

  • 68.47.Fg

    Semiconductor surfaces

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

  • 61.05.jh

    Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

  • 68.65.La

    Quantum wires (patterned in quantum wells)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1561571

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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