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17 Mar 2003

Volume 82, Issue 11, pp. 1649-1799

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1709 (2003); http://dx.doi.org/10.1063/1.1560575 (3 pages)

Ji-Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
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High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

Mohammad Shahariar Akbar, S. Gopalan, H.-J. Cho, K. Onishi, R. Choi, R. Nieh, C. S. Kang, Y. H. Kim, J. Han, S. Krishnan, and Jack C. Lee

Appl. Phys. Lett. 82, 1757 (2003); http://dx.doi.org/10.1063/1.1544062 (3 pages) | Cited 21 times

Online Publication Date: 10 March 2003

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Electrical and chemical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) prepared by low-thermal-budget (∼600 °C) NH3 post-deposition annealing of HfSiON gate dielectric have been investigated. Compared to control Hf-silicate, HfSiON showed excellent thickness scalability, low leakage current density (J), and superior thermal stability. With proper annealing-time optimization, effective oxide thickness as low as 9.2 Å with J<100 mA/cm2 at gate voltage Vg = −1.5 V has been achieved. C–V hysteresis of HfSiON MOSFET was found to be small (<20 mV). Unlike NH3 surface nitridation (NH3 pre-treatment prior to Hf-silicate deposition), no degradation in Gm (transconductance), Id–Vg (drain current–gate voltage), or Id–Vd (drain current–drain voltage) characteristics has been observed. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
77.55.-g Dielectric thin films
68.60.Dv Thermal stability; thermal effects
61.72.Cc Kinetics of defect formation and annealing
73.61.Ng Insulators

Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics

Hiroshi Maiwa, Naoya Iizawa, Daichi Togawa, Takashi Hayashi, Wataru Sakamoto, Mio Yamada, and Shin-ichi Hirano

Appl. Phys. Lett. 82, 1760 (2003); http://dx.doi.org/10.1063/1.1560864 (3 pages) | Cited 84 times

Online Publication Date: 10 March 2003

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Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-μm-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 °C exhibited a remanent polarization of 26 μC/cm2. Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4×10−4 under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.Ly Strain-induced piezoelectric fields
77.22.Ej Polarization and depolarization
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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