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17 Mar 2003

Volume 82, Issue 11, pp. 1649-1799

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1709 (2003); http://dx.doi.org/10.1063/1.1560575 (3 pages)

Ji-Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
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Fe valency-induced effect on the magnetic and electrotransport properties in Nd0.67Sr0.33Mn1−xFexO3 polycrystalline system

Y. L. Chang and C. K. Ong

Appl. Phys. Lett. 82, 1721 (2003); http://dx.doi.org/10.1063/1.1555259 (3 pages) | Cited 1 time

Online Publication Date: 10 March 2003

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Systematic study is conducted on the effect of Fe valency-induced magnetic and electrotransport properties in Nd0.67Sr0.33Mn1−xFexO3 polycrystalline system. The system is found to display the properties of Nd0.67Sr0.33MnO3 and Nd0.67Sr0.33FeO3 depending on the Fe concentration. It is found that, while Mn3+ and Mn4+ enhance the double exchange in the system, Fe3+ and Fe4+ enhance the superexchange interaction in the system. Although Fe3+ weakens the ferromagnetism, Fe4+ ions enhance the electrical conductivity in the system. The large variations in resistivity with temperature for some of these compounds has potential application in the development of new magnetic recording medias, optoelectronics devices and bolometric detectors. © 2003 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Mb Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
75.30.Et Exchange and superexchange interactions
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.28.+d Narrow-band systems; intermediate-valence solids

Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips

D. Álvarez, J. Hartwich, M. Fouchier, P. Eyben, and W. Vandervorst

Appl. Phys. Lett. 82, 1724 (2003); http://dx.doi.org/10.1063/1.1559931 (3 pages) | Cited 27 times

Online Publication Date: 10 March 2003

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Scanning spreading resistance microscopy is a two-dimensional carrier profiling technique now widely used for the characterization of silicon (Si) devices as well as other semiconductor materials. Whereas the state-of-the-art spatial resolution for this technique using commercial-diamond-coated silicon probes is limited to 10–20 nm, enhanced resolution is demonstrated through the use of full-diamond tips integrated in Si cantilevers. Sub-5-nm-spatial resolution is obtained on fully depleted silicon on isolator devices, putting the technique closer to the characterization requirements of the forthcoming semiconductor dimensions. Resistance and scanning electron microscope measurements clearly show that this enhanced resolution results from a smaller effective radius for full diamond tips as compared to the diamond-coated Si probes. © 2003 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena
72.80.Cw Elemental semiconductors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Current-induced structural modification of silicon-on-insulator nanocircuits

N. Clement, A. Francinelli, D. Tonneau, Ph. Scotto, F. Jandard, H. Dallaporta, V. Safarov, D. Fraboulet, and J. Gautier

Appl. Phys. Lett. 82, 1727 (2003); http://dx.doi.org/10.1063/1.1561573 (3 pages) | Cited 10 times

Online Publication Date: 10 March 2003

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Silicon-on-insulator (SOI) materials are considered the next form of Si for extending the metal–oxide–silicon technology. Here, we report the electrical study correlated with the topographical modification of nanostructures built on 20-nm-thick SOI. At current densities around 3×106 A cm−2, we noticed an irreversible modification characterized by formation of nanochannels and failures at n+n contacts. The origin of these channels can be attributed either to hydrodynamic diffusion of positive Si ions or to momentum exchange with holes created by impact ionization at high electric field (105 V/cm). We show also that the heating of the circuit plays an important role in the process. © 2003 American Institute of Physics.
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85.35.-p Nanoelectronic devices
85.65.+h Molecular electronic devices
81.07.Lk Nanocontacts
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.63.Rt Nanoscale contacts
81.65.-b Surface treatments

Infrared ellipsometry of GaAs epilayers on Si(100)

G. Yu, N. L. Rowell, D. J. Lockwood, and T. Soga

Appl. Phys. Lett. 82, 1730 (2003); http://dx.doi.org/10.1063/1.1561577 (3 pages) | Cited 1 time

Online Publication Date: 10 March 2003

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Infrared spectroscopic ellipsometry is used to characterize the structure of molecular-beam-epitaxial grown GaAs layers on Si(100) before and after thermal cycle (TC) annealing. The dielectric function of the GaAs epilayer has been described by the sum of a factorized form and a classical Drude model in the spectral fitting procedure. The epilayer LO phonon frequency shifts toward lower frequency with increasing TC number while the opposite is seen for TO phonon. The shift of the LO mode indicates that the tensile stress increases with increasing TC number, while the shift of the TO mode is attributed mainly to the self-energy effect in GaAs:Si. Unequal thermal diffusion of SiAs− and SiGa+ is indicated. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
07.60.Fs Polarimeters and ellipsometers
68.35.Ja Surface and interface dynamics and vibrations

Magnetic study of an amorphous conducting polyaniline

Debangshu Chaudhuri, Ashwani Kumar, D. D. Sarma, M. García-Hernández, Janhavi P. Joshi, and S. V. Bhat

Appl. Phys. Lett. 82, 1733 (2003); http://dx.doi.org/10.1063/1.1561166 (3 pages) | Cited 11 times

Online Publication Date: 10 March 2003

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We show that newly found BF3-doped polyaniline, although highly conducting, remains amorphous. Magnetic studies reveal many unusual properties, while suggesting that the intrinsic conductivity of this system is significantly larger than all other known forms of conducting polyaniline, establishing it as an interesting class of highly conducting amorphous polymer. © 2003 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
75.20.Ck Nonmetals
76.30.Lh Other ions and impurities
61.41.+e Polymers, elastomers, and plastics

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Hai Lu, William J. Schaff, Lester F. Eastman, and C. E. Stutz

Appl. Phys. Lett. 82, 1736 (2003); http://dx.doi.org/10.1063/1.1562340 (3 pages) | Cited 163 times

Online Publication Date: 10 March 2003

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A series of thin InN films down to 10 nm in thickness were prepared by molecular-beam epitaxy on either AlN or GaN buffers under optimized growth conditions. By extrapolating the fitted curve of sheet carrier density versus film thickness to zero film thickness, a strong excess sheet charge was derived, which must come from either the surface or the interface between InN and its buffer layer. Since metal contacts, including Ti, Al, Ni, and a Hg probe, can always form an ohmic contact on InN without any annealing, it is determined that at least part of the excess charge is surface charge, which was also confirmed by capacitance–voltage measurements. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
73.40.Ns Metal-nonmetal contacts
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.20.My Galvanomagnetic and other magnetotransport effects
68.47.Fg Semiconductor surfaces

Field-effect transistors on rubrene single crystals with parylene gate insulator

V. Podzorov, V. M. Pudalov, and M. E. Gershenson

Appl. Phys. Lett. 82, 1739 (2003); http://dx.doi.org/10.1063/1.1560869 (3 pages) | Cited 192 times

Online Publication Date: 10 March 2003

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We report on the fabrication and characterization of the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field-effect mobility 0.1–1 cm2/V s and the on/off ratio ≥ 104. The temperature dependence of the mobility is discussed. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma

Di Gao, Roger T. Howe, and Roya Maboudian

Appl. Phys. Lett. 82, 1742 (2003); http://dx.doi.org/10.1063/1.1560561 (3 pages) | Cited 14 times

Online Publication Date: 10 March 2003

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We report a highly selective reactive ion etching process for 3C-SiC films using HBr-based chemistry in a commercial transformer coupled plasma (TCP) etcher. SiO2 and Si3N4 are employed as etch masks. Etch rates for SiC, SiO2, and Si3N4 are measured as functions of chamber pressure and TCP source power. Etch rate ratios of 20:1 for SiC/SiO2 and 22:1 for SiC/Si3N4 are achieved. In addition, a SiC micromechanical resonator is fabricated to demonstrate integration of the etching process into conventional microfabrication technologies. © 2003 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
81.05.Hd Other semiconductors
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.55.-a Thin film structure and morphology

Ni-seeding effects on the properties of polycrystalline silicon–germanium grown at low temperature

Jianjun Zhang, Kousaku Shimizu, and Junichi Hanna

Appl. Phys. Lett. 82, 1745 (2003); http://dx.doi.org/10.1063/1.1561574 (3 pages) | Cited 1 time

Online Publication Date: 10 March 2003

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We have investigated the Ni-seeding effects on the low-temperature growth of the polycrystalline silicon–germanium (poly-SixGe1−x) films by reactive thermal chemical vapor deposition with Si2H6 and GeF4. Very thin Ni films (<2 nm) were deposited on the glass substrates by electron beam evaporation in prior to poly-SixGe1−x deposition. The crystallinity and electrical performance of the poly-SixGe1−x films were characterized. p-channel bottom-gate thin-film transistors (TFTs) were also fabricated with these films to evaluate the effect of Ni seeding on device performance. We found that a certain amount of Ni, i.e., less than 0.5 nm, impacts upon the grain size and crystallinity without additional degradation of electrical properties due to the incorporation of Ni in the film. A 0.2 nm equivalent thickness of Ni gives the best crystallinity and the largest grain size (135 nm) and results in the highest mobility (31 cm2/V s) in p-channel TFTs fabricated on SiO2/Si substrates. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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