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17 Mar 2003

Volume 82, Issue 11, pp. 1649-1799

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1709 (2003); http://dx.doi.org/10.1063/1.1560575 (3 pages)

Ji-Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
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Polarized incandescent light emission from carbon nanotubes

Peng Li, Kaili Jiang, Ming Liu, Qunqing Li, Shoushan Fan, and Jialin Sun

Appl. Phys. Lett. 82, 1763 (2003); http://dx.doi.org/10.1063/1.1558900 (3 pages) | Cited 31 times

Online Publication Date: 10 March 2003

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Polarized light emission from multiwalled carbon nanotube (MWNT) bundles due to current heating is observed. The spectra of the emitted light fit well with the blackbody radiation distribution. And the emitted light is partially polarized with a degree of 0.33 along the axis of MWNT bundle, which is qualitatively explained in terms of one-dimensional structure of carbon nanotubes (CNTs). Negative temperature-dependent resistance is also observed, which is different from normal metal filaments. The MWNT bundles are very stable at high temperature in vacuum during light emitting, indicating that CNTs can be a good candidate as polarized incandescent light sources. © 2003 American Institute of Physics.
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78.67.Ch Nanotubes
61.46.-w Structure of nanoscale materials
73.63.Fg Nanotubes

Highly anisotropic morphologies of GaAs(331) surfaces

V. R. Yazdanpanah, Z. M. Wang, and G. J. Salamo

Appl. Phys. Lett. 82, 1766 (2003); http://dx.doi.org/10.1063/1.1561571 (3 pages) | Cited 18 times

Online Publication Date: 10 March 2003

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The surface morphology of the GaAs(331) surface was investigated by in situ reflection high-energy electron diffraction and scanning tunneling microscopy. It was found, that GaAs(331) A and B surfaces are both faceted on a nanometer scale, containing (110) and (111) facets which are atomically resolved in real space. The resulting highly anisotropic ridge-like surfaces can prove useful in the fabrication of quantum wire structures. © 2003 American Institute of Physics.
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68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.65.La Quantum wires (patterned in quantum wells)

Spontaneous growth and luminescence of zinc sulfide nanobelts

Ying-Chun Zhu, Yoshio Bando, and Dong-Feng Xue

Appl. Phys. Lett. 82, 1769 (2003); http://dx.doi.org/10.1063/1.1562339 (3 pages) | Cited 78 times

Online Publication Date: 10 March 2003

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ZnS nanobelts have been synthesized by a simple thermal evaporation method in a N2 atmosphere containing a small amount of CO and H2 gases. The synthesized ZnS nanobelts have a width in the range of 40 to 120 nm, a thickness of 20 nm, and a length of several micrometers. The nanobelts are single crystals with a hexagonal wurtzite structure growing along the [001] direction. A vapor–solid process is proposed for the formation of such nanobelts. The as-prepared nanobelts shows two emission bands, around 450 and 600 nm. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
81.10.Bk Growth from vapor

Ordering self-assembled islands without substrate patterning

G. Capellini, M. De Seta, C. Spinella, and F. Evangelisti

Appl. Phys. Lett. 82, 1772 (2003); http://dx.doi.org/10.1063/1.1561163 (3 pages) | Cited 27 times

Online Publication Date: 10 March 2003

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The self-patterning of the strain field that arises in the growth of stacked multilayers of heteroepitaxial islands, together with the capability of tuning the island size by acting on the deposition temperature, are here exploited to obtain self-organization, resulting in well-ordered clusters composed of regularly disposed, nanosized islands. Our results show that the island spatial distribution can be tuned from a random one to a well-ordered square lattice of island clusters, and that the number of islands inside each cluster can be selected. Moreover, due to the dipole repulsive interaction between adjacent islands, the islands themselves arrange in an ordered fashion inside a single cluster along the same [010]-[100] crystalline directions of the long-range cluster ordering. © 2003 American Institute of Physics.
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81.16.Dn Self-assembly
81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
68.43.Hn Structure of assemblies of adsorbates (two- and three-dimensional clustering)
68.47.Fg Semiconductor surfaces
68.55.-a Thin film structure and morphology
68.37.Ps Atomic force microscopy (AFM)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Magnetotransport of p-type GaMnN assisted by highly conductive precipitates

K. H. Kim, K. J. Lee, D. J. Kim, H. J. Kim, Y. E. Ihm, D. Djayaprawira, M. Takahashi, C. S. Kim, C. G. Kim, and S. H. Yoo

Appl. Phys. Lett. 82, 1775 (2003); http://dx.doi.org/10.1063/1.1561580 (3 pages) | Cited 55 times

Online Publication Date: 10 March 2003

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GaMnN growth on GaAs (100) using a GaN single precursor via molecular beam epitaxy was undertaken. The grown layers revealed p-type conduction. It is confirmed that p-GaMnN reveals room temperature ferromagnetism with hysteresis loop having a coercivity of ∼ 100 Oe. The segregated phase showing a transition temperature of ∼ 200 K is assigned to Mn3GaN, and which enhances the conductivity of the surrounding GaMnN region. As a consequence, the GaMnN layer with segregation revealed an anomalous Hall effect at room temperature proving magnetotransport in GaMnN phase. The enhanced conductivity of GaMnN by the highly conductive second phase also revealed the importance of the role of the free carriers in the carrier-mediated ferromagnetism. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
64.75.-g Phase equilibria
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Fabrication of thiol-capped Pd nanoparticles: An electrochemical method

P. Zhang and T. K. Sham

Appl. Phys. Lett. 82, 1778 (2003); http://dx.doi.org/10.1063/1.1562334 (3 pages) | Cited 8 times

Online Publication Date: 10 March 2003

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A simple electrochemical method is developed to prepare thiol-capped Pd nanoparticles on a Si (100) surface by reducing Pd2+ in solution in the presence of thiol molecules. The structure, bonding, and electronic properties of the electrodeposited Pd nanoparticles (NPs), together with a series of Pd model systems, were studied by electron microscope and x-ray absorption spectroscopy at the S K-edge and the Pd L3,2-edge. The thiol-capped electrodeposits are found to be metallic Pd particles of a few nanometers, with local structures and electronic behavior considerably different from the non-thiol-capped electrodeposits, but rather comparable to colloidal thiol-capped NPs. © 2003 American Institute of Physics.
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81.07.Wx Nanopowders
81.16.Be Chemical synthesis methods
81.15.Pq Electrodeposition, electroplating
61.46.-w Structure of nanoscale materials
78.70.Dm X-ray absorption spectra
82.45.Qr Electrodeposition and electrodissolution
68.37.Vj Field emission and field-ion microscopy
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
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