APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 Mar 2003

Volume 82, Issue 11, pp. 1649-1799

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1709 (2003); http://dx.doi.org/10.1063/1.1560575 (3 pages)

Ji-Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Improving the mechanical properties of single-walled carbon nanotube sheets by intercalation of polymeric adhesives

Jonathan N. Coleman, Werner J. Blau, Alan B. Dalton, Edgar Muñoz, Steve Collins, Bog G. Kim, Joselito Razal, Miles Selvidge, Guillermo Vieiro, and Ray H. Baughman

Appl. Phys. Lett. 82, 1682 (2003); http://dx.doi.org/10.1063/1.1559421 (3 pages) | Cited 83 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Organic polymers, such as poly(vinyl alcohol), poly(vinyl pyrrolidone), and poly(styrene), were intercalated into single-walled carbon nanotube sheets by soaking the sheets in polymer solutions. Even for short soak times, significant polymer intercalation into existing free volume was observed. Tensile tests on intercalated sheets showed that the Young’s modulus, strength, and toughness increased by factors of 3, 9, and 28, respectively, indicating that the intercalated polymer enhances load transmission between nanotubes. © 2003 American Institute of Physics.
Show PACS
62.25.-g Mechanical properties of nanoscale systems
81.07.De Nanotubes
81.05.ub Fullerenes and related materials
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Np Adhesion
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

High-temperature resistive surface grating for spectral control of thermal radiation

Hitoshi Sai, Yoshiaki Kanamori, and Hiroo Yugami

Appl. Phys. Lett. 82, 1685 (2003); http://dx.doi.org/10.1063/1.1560867 (3 pages) | Cited 48 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Spectral emittance and thermal stability of two-dimensional W gratings are investigated to obtain high-temperature resistive selective emitters. Numerical calculations based on rigorous coupled-wave analysis are performed to determine the structural profile of gratings with good spectral selectivity. According to the determined parameters, two-dimensional W gratings composed of rectangular microcavities with the period of 1.0 μm are fabricated on single crystalline and polycrystalline W substrates. The grating shows a strong emission peak which can be explained by the confined modes inside the cavities. The grating with 200 nm wall thickness made from a single crystalline W shows very high thermal stability over 1400 K, while the polycrystalline grating is deformed at a high temperature because of the grain growth. © 2003 American Institute of Physics.
Show PACS
42.79.Dj Gratings
44.40.+a Thermal radiation

Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

Z. M. Wang, H. Wen, V. R. Yazdanpanah, J. L. Shultz, and G. J. Salamo

Appl. Phys. Lett. 82, 1688 (2003); http://dx.doi.org/10.1063/1.1559945 (3 pages) | Cited 12 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The shape of InAs three-dimensional islands grown on GaAs(311)A substrates by molecular-beam epitaxy was investigated by in situ scanning tunneling microscopy. The island is found to be laterally surrounded by (111)A and {110} facets together with a convex curved region close to the (100) facet. The top ridge of the islands is atomically resolved to be the most recently discovered high-index surface {11,5,2}. This observation points to the importance of the study of nanostructure growth on high-index surfaces and their characterization. © 2003 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.47.Fg Semiconductor surfaces
81.07.Bc Nanocrystalline materials

Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures

M. Passlack, J. K. Abrokwah, Z. Yu, R. Droopad, C. Overgaard, and H. Kawayoshi

Appl. Phys. Lett. 82, 1691 (2003); http://dx.doi.org/10.1063/1.1560875 (3 pages) | Cited 13 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Amorphous Ga2O3 films are deposited onto the GaAs(001) surface using effusive evaporation from a high-purity polycrystalline Ga2O3 source. The Ga2O3–GaAs structure is characterized by cross-sectional transmission electron microscopy, electron diffraction, and photoluminescence intensity measurements. As-deposited Ga2O3 films are found to be amorphous forming an atomically abrupt interface of low interface state density Dit with GaAs. For oxide films with a thickness tox ≥ 127 Å, rapid thermal annealing above a critical temperature Tc = 720 °C induces Ga2O3 bulk crystallization resulting in structural deformation of the Ga2O3–GaAs interface and complete destruction of its low Dit character. Preliminary data suggest that the critical temperature Tc may increase in the limit of very thin Ga2O3 films. © 2003 American Institute of Physics.
Show PACS
68.35.Ct Interface structure and roughness
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 82, 1694 (2003); http://dx.doi.org/10.1063/1.1559659 (3 pages) | Cited 49 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
AlN epilayers with high optical qualities have been obtained by metalorganic chemical vapor deposition on sapphire substrates. Deep UV picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in AlN epilayers. Two PL emission lines associated with the donor bound exciton (D0X, or I2) and free exciton (FX) transitions have been observed, from which the binding energy of the donor bound excitons in AlN epilayers was determined to be around 16 meV. Time-resolved PL measurements revealed that the recombination lifetimes of the I2 and free exciton transitions in AlN epilayers were around 80 and 50 ps, respectively. The temperature dependencies of the free exciton radiative decay lifetime and emission intensity were investigated, from which a value of about 80 meV for the free exciton binding energy in AlN epilayer was deduced. This value is believed to be the largest free exciton binding energy ever reported in semiconductors, implying excitons in AlN are an extremely robust system that would survive well above room temperature. This together with other well-known physical properties of AlN may considerably expand future prospects for the application of III-nitride materials. © 2003 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.20.At Surface states, band structure, electron density of states
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.35.-y Excitons and related phenomena

Alloy states in dilute GaAs1−xNx alloys (x<1%)

X. D. Luo, J. S. Huang, Z. Y. Xu, C. L. Yang, J. Liu, W. K. Ge, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 82, 1697 (2003); http://dx.doi.org/10.1063/1.1560872 (3 pages) | Cited 14 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A set of GaAs1−xNx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states. © 2003 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment

I. A. Buyanova, G. Yu. Rudko, W. M. Chen, A. A. Toropov, S. V. Sorokin, S. V. Ivanov, and P. S. Kop’ev

Appl. Phys. Lett. 82, 1700 (2003); http://dx.doi.org/10.1063/1.1561570 (3 pages) | Cited 14 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II–VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer. © 2003 American Institute of Physics.
Show PACS
72.25.Mk Spin transport through interfaces
75.50.Pp Magnetic semiconductors
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.21.Cd Superlattices
75.30.Ds Spin waves
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Femtosecond laser-induced periodic surface structure on diamond film

Qihong Wu, Yurong Ma, Rongchuan Fang, Yuan Liao, Qingxuan Yu, Xiangli Chen, and Kelvin Wang

Appl. Phys. Lett. 82, 1703 (2003); http://dx.doi.org/10.1063/1.1561581 (3 pages) | Cited 71 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the laser-induced periodic surface structure (LIPSS) with periodicity about a quarter of the laser wavelength on unpolished diamond film treated by a P-polarized femtosecond laser. The short period LIPSS is parallel to the laser polarization and independent on the incidence angle. The LIPSS perpendicular to the laser polarization with periodicity shorter than a third of the laser wavelength slightly dependent on the incidence angle is also observed as well as the LIPSS perpendicular to the laser polarization with periodicity dependent on the incidence angle. The results are explained by interference of the incident laser and surface scattered wave related to the excited electrons during laser interactions with diamond, being in excellent agreement with a previously developed theory. © 2003 American Institute of Physics.
Show PACS
79.20.Ds Laser-beam impact phenomena
81.05.U- Carbon/carbon-based materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.82.Fk Semiconductors

Formation of InAs self-assembled quantum rings on InP

T. Raz, D. Ritter, and G. Bahir

Appl. Phys. Lett. 82, 1706 (2003); http://dx.doi.org/10.1063/1.1560868 (3 pages) | Cited 59 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1-nm-thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms. © 2003 American Institute of Physics.
Show PACS
68.65.Hb Quantum dots (patterned in quantum wells)

Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

Ji-Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West

Appl. Phys. Lett. 82, 1709 (2003); http://dx.doi.org/10.1063/1.1560575 (3 pages) | Cited 9 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Atomically flat (110) GaAs surfaces fabricated by the cleaved-edge overgrowth method and high-temperature growth-interrupt annealing are characterized at the atomic scale. We observe atomically flat (110) surfaces extending over areas more than 100 μm in size. Moreover, deposition of slightly less or more than integral monolayers (MLs) causes the appearance of characteristic step-edge shapes such as 1-ML-deep pits, or 2-to-3-ML-high isolated islands. Statistical analysis on the size and shape distribution of the 1-ML-deep pits supports a simple model based on the stability of Ga and As atoms on step edges with different bonding configurations, and reveals driving force to form an atomically flat (110) surface. © 2003 American Institute of Physics.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Fg Semiconductor surfaces
61.72.Cc Kinetics of defect formation and annealing

Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity

S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, and M. Eickhoff

Appl. Phys. Lett. 82, 1712 (2003); http://dx.doi.org/10.1063/1.1561160 (3 pages) | Cited 8 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We observed a peculiar dependence of low-temperature electroreflectance spectra of Pt/GaN Schottky diodes with Ga- and N-face polarity on the bias voltage (so-called “rotation” spectra), indicating the quenching of discrete exciton states and the formation of an exciton dead layer (EDL) beneath the gate. Data analysis is carried out using the field-dependent dielectric function of GaN. It yields parameters of excitons for the zero-field limit and the depth of the EDL, as well as the surface band bending and the ionized impurity concentration. © 2003 American Institute of Physics.
Show PACS
85.30.Kk Junction diodes
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
78.20.Jq Electro-optical effects
77.22.Ch Permittivity (dielectric function)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask

M. Y. Shen, C. H. Crouch, J. E. Carey, R. Younkin, E. Mazur, M. Sheehy, and C. M. Friend

Appl. Phys. Lett. 82, 1715 (2003); http://dx.doi.org/10.1063/1.1561162 (3 pages) | Cited 46 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report fabrication of regular arrays of silicon microspikes by femtosecond laser irradiation of a silicon wafer covered with a periodic mask. Without a mask, microspikes form, but they are less ordered. We believe that the mask imposes order by diffracting the laser beam and providing boundary conditions for capillary waves in the laser-melted silicon. © 2003 American Institute of Physics.
Show PACS
81.65.-b Surface treatments
81.05.Cy Elemental semiconductors
85.40.Hp Lithography, masks and pattern transfer
79.20.Ds Laser-beam impact phenomena
68.47.Fg Semiconductor surfaces
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
64.70.D- Solid-liquid transitions
06.60.Jn High-speed techniques (microsecond to femtosecond)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime

Jun Yong Ahn, Kyung Hoon Jun, Koeng Su Lim, and Makoto Konagai

Appl. Phys. Lett. 82, 1718 (2003); http://dx.doi.org/10.1063/1.1561161 (3 pages) | Cited 9 times

Online Publication Date: 10 March 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated the structural, electrical, and optical properties as well as light-induced degradation characteristics of silicon films prepared by photochemical vapor deposition at various hydrogen dilution ratios. The protocrystalline silicon deposited before the onset of the microcrystalline regime was most stable against light soaking. However, the films deposited at the onset of the microcrystalline regime, known to have the most competent device quality and stability, were observed to be less stable. Such instability at the onset of the microcrystalline regime is correlated with the existence of the clustered phase hydrogen that indicates microvoids in the films. © 2003 American Institute of Physics.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.82.Fk Semiconductors
78.30.-j Infrared and Raman spectra
78.66.Db Elemental semiconductors and insulators
73.50.Pz Photoconduction and photovoltaic effects
77.22.Ch Permittivity (dielectric function)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close