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31 Mar 2003

Volume 82, Issue 13, pp. 1999-2184

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Appl. Phys. Lett. 82, 2094 (2003); http://dx.doi.org/10.1063/1.1563813 (3 pages)

Y. J. Lee, J. von Boehm, M. Pesola, and R. M. Nieminen
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Low-light divergence in photovoltaic parameter fluctuations

Diana Shvydka, V. G. Karpov, and A. D. Compaan

Appl. Phys. Lett. 82, 2157 (2003); http://dx.doi.org/10.1063/1.1563836 (3 pages) | Cited 6 times

Online Publication Date: 25 March 2003

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We study statistics of the major photovoltaic (PV) parameters, such as open-circuit voltage, short-circuit current, etc., versus light intensity on a set of nominally identical thin-film CdTe/CdS solar cells. A crossover light intensity is found, below which the relative fluctuations of the PV parameters diverge inversely proportional to the square root of the light intensity. We propose a model in which the observed fluctuations are due to lateral nonuniformities in the device structure. The crossover is attributed to the lateral nonuniformity screening length exceeding the device size. From the practical standpoint, our study introduces a simple uniformity diagnostic technique. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.61.Ga II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Detection of electrical spin injection by light-emitting diodes in top- and side-emission configurations

R. Fiederling, P. Grabs, W. Ossau, G. Schmidt, and L. W. Molenkamp

Appl. Phys. Lett. 82, 2160 (2003); http://dx.doi.org/10.1063/1.1564873 (3 pages) | Cited 22 times

Online Publication Date: 25 March 2003

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Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode (LED) fitted with a spin injecting contact (a spin-LED) allows the direct determination of the spin polarization of the injected carriers. Here, we compare the detection efficiency of (Al,Ga)As spin-LEDs fitted with a (Zn,Be,Mn)Se spin injector in top- and side-emission configurations. In contrast to top emission, we cannot detect the electrical spin injection in side emission by analyzing the degree of circular polarization of the electroluminescence. To reduce resonant optical pumping of quantum-well excitons in side emission, we have analyzed structures with mesa sizes as small as 1 μm. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

High-efficiency polymer light-emitting diodes with stable saturated red emission based on blends of dioctylfluorene-benzothiadiazole-dithienylbenzothiadiazole terpolymers and poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene]

Yu-Hua Niu, Qiong Hou, and Yong Cao

Appl. Phys. Lett. 82, 2163 (2003); http://dx.doi.org/10.1063/1.1564875 (3 pages) | Cited 18 times

Online Publication Date: 25 March 2003

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High-efficiency light-emitting diodes with stable saturated red emission are realized based on blends of poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEHPPV) and terpolymers of dioctylfluorene, benzothiadiazole, and dithienylbenzothiadiazole (DBT). External quantum efficiency of more than 3.2 emitted photons per hundred electrons injected (ph/el %) is realized for a device with the Commission Internationale de I’Eclairage coordinates x = 0.65, y = 0.35. Such high device performance results from effective hole injection induced by the addition of MEHPPV, efficient energy transfer from the [0-0] ground-state emission of MEHPPV to the DBT segments together with the direct contribution of the [0-1] phonon coupling emission of MEHPPV. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Doping diagnosis by evaluation of the surface Fermi level using scanning Maxwell-stress microscopy

Takashi Matsukawa, Seigo Kanemaru, Meishoku Masahara, Masayoshi Nagao, Hisao Tanoue, and Junji Itoh

Appl. Phys. Lett. 82, 2166 (2003); http://dx.doi.org/10.1063/1.1564636 (3 pages) | Cited 1 time

Online Publication Date: 25 March 2003

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A microscopic approach for evaluation of the Fermi level on the silicon surface under various doping conditions is reported. We have utilized scanning Maxwell-stress microscopy (SMM) for measurement of the surface potential. The surface Fermi level evaluated by SMM was almost identical to the bulk Fermi level determined by doping when the surface states are passivated by thermal oxide. The SMM measurement on the pn junction under an electrically shorted condition exhibited contrast in potential which is consistent with that of the bulk Fermi level. The results for the open circuit condition exhibited an inconsistent potential profile, which is due to the photovoltaic effect from light irradiation of the sample. © 2003 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.25.+i Surface conductivity and carrier phenomena
68.47.Fg Semiconductor surfaces
61.72.S- Impurities in crystals
72.40.+w Photoconduction and photovoltaic effects
68.37.-d Microscopy of surfaces, interfaces, and thin films

Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

I. Pintilie, E. Fretwurst, G. Lindström, and J. Stahl

Appl. Phys. Lett. 82, 2169 (2003); http://dx.doi.org/10.1063/1.1564869 (3 pages) | Cited 13 times

Online Publication Date: 25 March 2003

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Radiation-induced defects in silicon diodes were investigated after exposure to high doses of Co60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in oxygen-enriched material while it is the main cause for the space charge sign inversion effect observed in standard float-zone material. © 2003 American Institute of Physics.
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61.80.Ed γ-ray effects
85.30.Kk Junction diodes
81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors
72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.22.Ej Polarization and depolarization
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
77.22.Jp Dielectric breakdown and space-charge effects
72.60.+g Mixed conductivity and conductivity transitions

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

A. Armigliato, R. Balboni, G. P. Carnevale, G. Pavia, D. Piccolo, S. Frabboni, A. Benedetti, and A. G. Cullis

Appl. Phys. Lett. 82, 2172 (2003); http://dx.doi.org/10.1063/1.1565181 (3 pages) | Cited 20 times

Online Publication Date: 25 March 2003

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A method of obtaining quantitative two-dimensional (2D) maps of strain by the convergent beam electron diffraction technique in a transmission electron microscope is described. It is based on the automatic acquisition of a series of diffraction patterns generated from digital rastering the electron spot in a matrix of points within a selected area of the sample. These patterns are stored in a database and the corresponding strain tensor at each point is calculated, thus yielding a 2D strain map. An example of application of this method to cross-sectioned cells fabricated for the 0.15 μm technology of flash memories is reported. © 2003 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
07.10.Pz Instruments for strain, force, and torque
68.37.Lp Transmission electron microscopy (TEM)
85.30.Tv Field effect devices

InGaAs/InAlAs avalanche photodiode with undepleted absorber

Ning Li, Rubin Sidhu, Xiaowei Li, Feng Ma, Xiaoguang Zheng, Shuling Wang, Gauri Karve, Stephane Demiguel, Archie L. Holmes, and Joe C. Campbell

Appl. Phys. Lett. 82, 2175 (2003); http://dx.doi.org/10.1063/1.1559437 (3 pages) | Cited 13 times

Online Publication Date: 25 March 2003

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We report an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing an undepleted absorption layer, which is similar to that in the unitraveling carrier photodiode, is to reduce the dark current. A dark current below 1 nA at a gain of 10 and a gain–bandwidth product of 160 GHz are demonstrated. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Ea III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
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