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31 Mar 2003

Volume 82, Issue 13, pp. 1999-2184

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Appl. Phys. Lett. 82, 2094 (2003); http://dx.doi.org/10.1063/1.1563813 (3 pages)

Y. J. Lee, J. von Boehm, M. Pesola, and R. M. Nieminen
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Displacement-sensitive photonic crystal structures based on guided resonance in photonic crystal slabs

Wonjoo Suh, M. F. Yanik, Olav Solgaard, and Shanhui Fan

Appl. Phys. Lett. 82, 1999 (2003); http://dx.doi.org/10.1063/1.1563739 (3 pages) | Cited 60 times

Online Publication Date: 25 March 2003

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We introduce a mechanically tunable photonic crystal structure consisting of coupled photonic crystal slabs. Using both analytic theory, and first-principles finite-difference time-domain simulations, we demonstrate that a strong variation of transmission and reflection coefficients of light through such structures can be accomplished with only a nanoscale variation of the spacing between the slabs. Moreover, by specifically configuring the photonic crystal structures, high sensitivity can be preserved in spite of significant fabrication-related disorders. We expect such structures to play important roles in micromechanically tunable optical sensors and filters. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.50.-p Quantum optics
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
02.70.Bf Finite-difference methods

Efficient 3–5-μm negative luminescence from HgCdTe/Si photodiodes

J. R. Lindle, W. W. Bewley, I. Vurgaftman, J. R. Meyer, J. B. Varesi, and S. M. Johnson

Appl. Phys. Lett. 82, 2002 (2003); http://dx.doi.org/10.1063/1.1563839 (3 pages) | Cited 10 times

Online Publication Date: 25 March 2003

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The negative luminescence of a midwave-infrared HgCdTe photodiode (cutoff wavelength = 5.3 μm at 295 K) was investigated using a modulated, self-referencing, optical technique. Internal efficiencies were measured to be 88% throughout the 3–5-μm spectral region, nearly independent of temperature in the 240–300-K range. This corresponds to an apparent temperature reduction of greater than 50 K at room temperature and greater than 35 K at 240 K when the reverse bias is applied. The reverse saturation current density of 1.3 A/cm2 is lower than any reported previously for a negative luminescence device with cutoff wavelength beyond 4 μm. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Db Elemental semiconductors and insulators

Significant enhancement of terahertz radiation from InSb by use of a compact fiber laser and an external magnetic field

Hiroshi Takahashi, Yuji Suzuki, Masahiro Sakai, Shingo Ono, Nobuhiko Sarukura, Toshiharu Sugiura, Tomoya Hirosumi, and Makoto Yoshida

Appl. Phys. Lett. 82, 2005 (2003); http://dx.doi.org/10.1063/1.1564290 (3 pages) | Cited 12 times

Online Publication Date: 25 March 2003

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We investigated the magnetic-field dependence of terahertz (THz) radiation power from InSb. Significant enhancement of THz-radiation power is observed by using a compact fiber laser that delivered 100 fs optical pulses at a center wavelength of 1560 nm. Additionally, applying external magnetic fields dramatically enhanced the THz-radiation power. THz-radiation power reaches a maximum value at around 1.2 T, and its enhancement factor exceeds 100. From an applications viewpoint, this is a significant finding for practical light source design, since it is easily achieved by using a compact fiber laser and a conventional magnet. © 2003 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources

Dynamics of causal beam refraction in negative refractive index materials

Steven A. Cummer

Appl. Phys. Lett. 82, 2008 (2003); http://dx.doi.org/10.1063/1.1564289 (3 pages) | Cited 25 times

Online Publication Date: 25 March 2003

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A finite difference simulation of a causally excited electromagnetic Gaussian beam incident on an interface between free space and a physically realizable negative refractive index material shows that negative refraction of finite beams does occur. A discontinuity in the phase normal direction is established very quickly when the beam front reaches the interface of positive and negative index materials. Once the beam enters the negative index material, the causal wave-front propates with the group velocity consistent with theory. During the transient portion of the beam development, the beam undergoes small direction changes, which can be explained as a consequence of higher frequencies present during the beam turn-on. After this transient, the theoretically predicted sinusoidal steady state is reached. © 2003 American Institute of Physics.
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42.25.Gy Edge and boundary effects; reflection and refraction

Intrinsic diffraction losses in photonic crystal waveguides with line defects

Lucio Claudio Andreani and Mario Agio

Appl. Phys. Lett. 82, 2011 (2003); http://dx.doi.org/10.1063/1.1564295 (3 pages) | Cited 32 times

Online Publication Date: 25 March 2003

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Intrinsic diffraction losses of linear defect modes in photonic crystal slabs are calculated for membrane-type waveguides with strong refractive index contrast. In the frequency region of high group velocity of the defect mode, the radiative losses increase with the air fraction of the lattice and decrease on increasing the channel width or the slab thickness. Close to a mini-gap in the mode dispersion, a complex frequency dependence of the losses is found. The calculated losses agree well with those measured in a Si slab [M. Lončar et al., Appl. Phys. Lett. 80, 1689 (2002)]. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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