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31 Mar 2003

Volume 82, Issue 13, pp. 1999-2184

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2094 (2003); http://dx.doi.org/10.1063/1.1563813 (3 pages)

Y. J. Lee, J. von Boehm, M. Pesola, and R. M. Nieminen
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Electrical characterization of electrochemically grown single copper nanowires

M. E. Toimil Molares, E. M. Höhberger, Ch. Schaeflein, R. H. Blick, R. Neumann, and C. Trautmann

Appl. Phys. Lett. 82, 2139 (2003); http://dx.doi.org/10.1063/1.1563741 (3 pages) | Cited 62 times

Online Publication Date: 25 March 2003

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Single- and poly-crystalline copper wires with diameters down to 30 nm are grown in etched ion-track membranes. Individual nanowires are isolated and contacted by means of optical lithography. Electronic transport properties and oxidation processes are investigated. Depending on the oxidation state, the wire resistance varies between a few hundred ohms and several megaohms, enabling its usage as metallic or semiconducting structural elements for devices on the nanometer scale. © 2003 American Institute of Physics.
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81.07.Vb Quantum wires
81.15.Pq Electrodeposition, electroplating
73.63.Nm Quantum wires
61.46.-w Structure of nanoscale materials
81.16.Pr Micro- and nano-oxidation
81.16.Nd Micro- and nanolithography
85.40.Ls Metallization, contacts, interconnects; device isolation

Shape and growth of InAs quantum dots on GaAs(113)A

Y. Temko, T. Suzuki, and K. Jacobi

Appl. Phys. Lett. 82, 2142 (2003); http://dx.doi.org/10.1063/1.1563738 (3 pages) | Cited 21 times

Online Publication Date: 25 March 2003

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The shape of InAs quantum dots (QDs), grown by molecular-beam epitaxy on the GaAs(113)A surface, is studied by in situ scanning tunneling microscopy. At an early growth stage, the QDs adopt a shape given by {110}, (111)A, and {2 5 11}A bounding facets and an unresolved rounded {001} region. At a later growth stage, the QDs become elongated along [33math], with a reduction of the (111)A facet size and a flattening of the rounded region. This is explained by facet growth kinetics. The broad size distribution indicates growth limitation. The symmetry of the substrate is retained in the QDs, proving epitaxial growth. © 2003 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Random networks of carbon nanotubes as an electronic material

E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park

Appl. Phys. Lett. 82, 2145 (2003); http://dx.doi.org/10.1063/1.1564291 (3 pages) | Cited 184 times

Online Publication Date: 25 March 2003

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We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (∼1 μm−2) the networks are electrically continuous and behave like a p-type semiconductor with a field-effect mobility of ∼10 cm2/V s and a transistor on-to-off ratio ∼ 105. At higher densities (∼10 μm−2) the field-effect mobility can exceed 100 cm2/V s; however, in this case the network behaves like a narrow band gap semiconductor with a high off-state current. The fact that useful device properties are achieved without precision assembly of the nanotubes suggests the random carbon nanotube networks may be a viable material for thin-film transistor applications. © 2003 American Institute of Physics.
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73.63.Fg Nanotubes
85.35.Kt Nanotube devices
85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2

Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, and Masanobu Miyao

Appl. Phys. Lett. 82, 2148 (2003); http://dx.doi.org/10.1063/1.1564298 (3 pages) | Cited 14 times

Online Publication Date: 25 March 2003

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Metal-induced low-temperature (≦550 °C) crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2 has been investigated. In the case of low Ge fraction (0≦x≦0.2), Ge-doping enhanced plane growth was observed. This achieved strain-freepoly-Si0.8Ge0.2 with large grains (18 μm). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (0.4≦x≦0.6). By optimizing the growth conditions (x: 0.4, annealing: 450 °C, 20 h), very sharp needle-like crystal regions (width: 0.05 μm, length: 10 μm) were obtained. These polycrystalline SiGe films on SiO2 should be used for the system-in-display, three-dimensional ultralarge scale integrated circuits, and novel one-dimensional wires. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.K- Solid-solid transitions
61.72.Cc Kinetics of defect formation and annealing

Control of tunnel oxide thickness in Si-nanocrystal array memories obtained by ion implantation and its impact in writing speed and volatility

O. González-Varona, B. Garrido, S. Cheylan, A. Pérez-Rodríguez, A. Cuadras, and J. R. Morante

Appl. Phys. Lett. 82, 2151 (2003); http://dx.doi.org/10.1063/1.1565709 (3 pages) | Cited 15 times

Online Publication Date: 25 March 2003

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The injection and storage of charge in Si nanocrystals obtained by ion implantation and annealing have been studied for different tunnel oxide thicknesses. The energy of the ions was kept fixed at 15 keV, which is compatible with most ion implanters used in Si technology, and the distance between the Si nanocrystals and the substrate was controlled by using gate oxides with different thicknesses. The processing conditions were adjusted for precipitating all the Si excess and for having Si–SiO2 interfaces free of defects. Consequently, reliable structures were obtained working in the direct tunneling injection regime, which show unprecedented longer retention times. Furthermore, it is shown that by changing only the oxide thickness it is possible to engineer devices with a tradeoff between writing speed and retention time. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing

Effect of a rotating electrode on the formation of single-walled carbon nanotubes

Jun Cheol Bae, Young Joon Yoon, Hong Koo Baik, Se-Jong Lee, and Kie Moon Song

Appl. Phys. Lett. 82, 2154 (2003); http://dx.doi.org/10.1063/1.1565684 (3 pages) | Cited 1 time

Online Publication Date: 25 March 2003

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We investigated the effect of a rotating anode on the formation of single-walled carbon nanotubes (SWNTs) using the plasma rotating electrode process. With rotation of the anode, the diameter distribution of SWNTs was shifted toward smaller diameters, and the yield of SWNTs increased. In addition, optical emission spectroscopy confirmed the increase of plasma temperature by rotating anode. These results indicate that the diameter distribution of SWNTs and the increase of SWNT yield resulted from the change of discharge characteristics by rotation of the anode. © 2003 American Institute of Physics.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
78.67.Ch Nanotubes
78.30.Na Fullerenes and related materials
68.37.Lp Transmission electron microscopy (TEM)
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