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Applied Physics Letters / Volume 82 / Issue 14 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 82, 2242 (2003); http://dx.doi.org/10.1063/1.1566465 (3 pages)

In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy

E. Monroy1, N. Gogneau1, D. Jalabert1, E. Bellet-Amalric1, Y. Hori1, F. Enjalbert2, Le Si Dang2, and B. Daudin1

1Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, Dépt. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9, France
2Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, Laboratoire de Spectrométrie Physique, Université Joseph Fourier, Grenoble, France

(Received 2 December 2002; accepted 12 February 2003)

Epitaxial growth of quaternary AlGaInN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with an In film segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of AlN compared to InN and GaN. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, indium compounds, III-V semiconductors, semiconductor growth, semiconductor epitaxial layers, molecular beam epitaxial growth, plasma deposition, surface segregation

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 81.05.Ea

    III-V semiconductors

  • 68.55.A-

    Nucleation and growth

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 68.35.Dv

    Composition, segregation; defects and impurities

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1566465

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    F. G. McIntosh, K. S. Boutros, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El-Masry, Appl. Phys. Lett. 68, 40 (1996)APPLAB000068000001000040000001.

    E. Monroy, B. Daudin, E. Bellet-Amalric, N. Gogneau, D. Jalabert, F. Enjalbert, J. Brault, J. Barjon, and Le Si Dang, J. Appl. Phys. 93, 1550 (2003)JAPIAU000093000003001550000001.

    T. Matsuoka, Appl. Phys. Lett. 71, 105 (1997)APPLAB000071000001000105000001.

    T. Böttcher, S. Einfeldt, V. Kirchner, S. Figge, H. Heinke, D. Hommel, H. Selke, and P. L. Ryder, Appl. Phys. Lett. 73, 3232 (1998)APPLAB000073000022003232000001.

    C. Stampfl and C. G. Van der Walle, Phys. Rev. B 59, 5521 (1999).


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