APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Apr 2003

Volume 82, Issue 15, pp. 2371-2540

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2491 (2003); http://dx.doi.org/10.1063/1.1566791 (3 pages)

Jun Li, Qi Ye, Alan Cassell, Hou Tee Ng, Ramsey Stevens, Jie Han, and M. Meyyappan
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm

Gianlorenzo Masini, Lorenzo Colace, and Gaetano Assanto

Appl. Phys. Lett. 82, 2524 (2003); http://dx.doi.org/10.1063/1.1567046 (3 pages) | Cited 20 times

Online Publication Date: 7 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5 mA/W at 1.3 and 1.55 μm, respectively, and dark currents of 1 mA/cm2, is entirely integrable on standard silicon electronics and is an appealing low-cost candidate for fiber-to-the-home communication networks. © 2003 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Dw Photodiodes; phototransistors; photoresistors
42.81.Uv Fiber networks

Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals

Jae Kwon Kim, Hea Jeong Cheong, Yong Kim, Jae-Yel Yi, Hong Jun Bark, S. H. Bang, and J. H. Cho

Appl. Phys. Lett. 82, 2527 (2003); http://dx.doi.org/10.1063/1.1567039 (3 pages) | Cited 54 times

Online Publication Date: 7 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals is investigated by means of capacitance-voltage (C–V) and capacitance decay measurements. The C–V curves show the hysteresis indicating the charge storage effect in Ge nanocrystals. The hysteresis width shows strong annealing temperature dependence and shows the maximum at 700 °C meaning the maximum nanocrystal density. Capacitance decay experiment at flat-band voltage shows that the decay is dominated by two decay mechanisms. The initial fast discharge is more significant for samples annealed at lower temperatures. The cross-sectional transmission electron microscopic observations show the quasi-continuous Ge layer with Ge nanocrystals and Ge-rich amorphous regions for samples annealed at lower temperatures. Therefore, the fast discharging is attributed to lateral charge loss of insufficiently localized nanocrystals. On the other hand, the slow discharge is attributed to tunneling out of the stored charges in completely localized Ge nanocrystals via the tunneling barrier. © 2003 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
61.72.Cc Kinetics of defect formation and annealing

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, et al.

Appl. Phys. Lett. 82, 2530 (2003); http://dx.doi.org/10.1063/1.1567051 (3 pages) | Cited 47 times

Online Publication Date: 7 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrated that Sc2O3 thin films deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs). The maximum drain source current, IDS, reaches a value of over 0.8 A/mm and is ∼ 40% higher on Sc2O3/AlGaN/GaN transistors relative to conventional HEMTs fabricated on the same wafer. The metal–oxide–semiconductor HEMTs (MOS–HEMTs) threshold voltage is in good agreement with the theoretical value, indicating that Sc2O3 retains a low surface state density on the AlGaN/GaN structures and effectively eliminates the collapse in drain current seen in unpassivated devices. The MOS-HEMTs can be modulated to +6 V of gate voltage. In particular, Sc2O3 is a very promising candidate as a gate dielectric and surface passivant because it is more stable on GaN than is MgO. © 2003 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
81.65.Rv Passivation
73.20.Hb Impurity and defect levels; energy states of adsorbed species
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close