APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Apr 2003

Volume 82, Issue 15, pp. 2371-2540

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2491 (2003); http://dx.doi.org/10.1063/1.1566791 (3 pages)

Jun Li, Qi Ye, Alan Cassell, Hou Tee Ng, Ramsey Stevens, Jie Han, and M. Meyyappan
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process

Kazuo Takahashi, Takashi Mitamura, Kouichi Ono, Yuichi Setsuhara, Atsushi Itoh, and Kunihide Tachibana

Appl. Phys. Lett. 82, 2476 (2003); http://dx.doi.org/10.1063/1.1567050 (3 pages) | Cited 11 times

Online Publication Date: 7 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Fluorocarbon films obtained in plasma-enhanced chemical vapor deposition with a C4F8 compound were composed of a carbon cross-linked network and unlinked species encapsulated in the network [J. Appl. Phys. 89, 893 (2001)]. The unlinked species were effectively removed from the films. Then, the network probably containing the pore of the species was extracted on wafers when the films were dipped into tetrahydrofran (THF) solvent. The fact implied that fluorocarbon porous films with a low-dielectric constant might be formed by using dry and wet processes. In the present study, x-ray analyses showed that the THF-treated films actually became porous in the dipping process. The dielectric constant of the THF-treated films was consistently low (<1.9) and reduced by 10% from that of as-deposited films. The fluorocarbon network as a porous medium may be applied to interlayer dielectrics for ultralarge-scale integrated circuits. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Jd Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)

Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films

Xusheng Wang and Hiroshi Ishiwara

Appl. Phys. Lett. 82, 2479 (2003); http://dx.doi.org/10.1063/1.1566087 (3 pages) | Cited 65 times

Online Publication Date: 7 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Bi3.35La0.75(Ti1−xWx)3O12 (BLTW) and Bi3.35La0.75(Ti1−xMox)3O12 (BLTM) (x = 0.3%, 0.5%, 1%, and 2%) films were fabricated on Pt/Ti/SiO2/Si〈100〉 structures by a sol-gel method at 750 °C. The B-site substitution with high-valent cations, W6+ or Mo6+, in Bi3.35La0.75Ti3O12 (BLT) enhanced the remanent polarization and reduced the coercive field of the films. The remanent polarization (2Pr) values of the BLTW05 (x = 0.5%) and BLTM05 (x = 0.5%) films were 26 and 27 μC/cm2, respectively, which were higher than that of BLT (20 μC/cm2). The coercive field (2Ec) values of the BLTW05 and BLTM05 films were 125 and 126 kV/cm, respectively, which were much lower than that of BLT (190 kV/cm) and close to that of SrBi2Ta2O9 (∼110 kV/cm). These films also showed fatigue-free response up to 2×109 switching cycles and lower leakage current densities than 4×10−7 A/cm2 up to 200 kV/cm. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Mingzhen Xu, Changhua Tan, and MingFu Li

Appl. Phys. Lett. 82, 2482 (2003); http://dx.doi.org/10.1063/1.1566460 (3 pages) | Cited 5 times

Online Publication Date: 7 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A stress-induced double-donor conductivity model is proposed to investigate the temperature dependence of time-to-breakdown in ultrathin gate oxides. The permittivity-to-breakdown is defined as the product of conductivity and time-to-breakdown. The breakdown of oxides occurs when the permittivity-to-breakdown reaches a critical value. This model shows that the overall temperature dependence of time-to-breakdown can be described in terms of the extended Arrhenius law. In this case, there exist three temperature regions with different activation energies, where Arrhenius behavior still holds in each region. © 2003 American Institute of Physics.
Show PACS
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close