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14 Apr 2003

Volume 82, Issue 15, pp. 2371-2540

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2491 (2003); http://dx.doi.org/10.1063/1.1566791 (3 pages)

Jun Li, Qi Ye, Alan Cassell, Hou Tee Ng, Ramsey Stevens, Jie Han, and M. Meyyappan
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Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes

Yoshitaka Nakano, Tetsu Kachi, and Takashi Jimbo

Appl. Phys. Lett. 82, 2443 (2003); http://dx.doi.org/10.1063/1.1567811 (3 pages) | Cited 12 times

Online Publication Date: 7 April 2003

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We report on the electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor (MOS) diodes with n+ source regions fabricated on sapphire substrates. The n+ regions were selectively produced in Mg-doped GaN by Si+N coimplantation and subsequent annealing at 1300 °C, and then 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880 °C for 5 h. Capacitance–voltage measurements at room temperature display a surface inversion feature with an onset voltage of ∼ 2.5 V and show an extremely low interface trap density less than 1×1010 eV−1 cm−2. These results suggest that the thermally grown β-Ga2O3/p-GaN MOS structure is a promising candidate for inversion-mode MOS field-effect transistors. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Kk Junction diodes
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing

Coherent optical phonon oscillations in cubic ZnSe

Yong-Sik Lim, Seok-Chan Yoon, Ki-Ju Yee, Yeong-Hwan Ahn, E. Oh, and Jai-Hyung Lee

Appl. Phys. Lett. 82, 2446 (2003); http://dx.doi.org/10.1063/1.1567827 (3 pages) | Cited 6 times

Online Publication Date: 7 April 2003

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We report the observation of coherent optical phonon oscillations in cubic bulk ZnSe(001). With a photon energy far below the band gap, the generation mechanism of the coherent longitudinal optical phonon mode is revealed to be the impulsive stimulated Raman scattering. Dephasing of the coherent longitudinal optical phonon modes by electron-phonon interaction and anharmonic processes is studied by investigating excitation intensity and temperature dependence of the dephasing rates. © 2003 American Institute of Physics.
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63.20.Ry Anharmonic lattice modes
63.20.K- Phonon interactions
78.30.Fs III-V and II-VI semiconductors

Ferromagnetic resonant tunneling diodes as spin polarimeters

Francesco Giazotto, Fabio Taddei, Rosario Fazio, and Fabio Beltram

Appl. Phys. Lett. 82, 2449 (2003); http://dx.doi.org/10.1063/1.1567812 (3 pages) | Cited 10 times

Online Publication Date: 7 April 2003

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A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows one to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approach is believed to be well suited for the investigation of diluted magnetic semiconductor heterostructures. © 2003 American Institute of Physics.
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85.75.Mm Spin polarized resonant tunnel junctions
72.25.Mk Spin transport through interfaces
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Relaxed silicon–germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

Zhenghua An, Yanjun Wu, Miao Zhang, Zengfeng Di, Chenglu Lin, Ricky K. Y. Fu, Peng Chen, Paul K. Chu, W. Y. Cheung, and S. P. Wong

Appl. Phys. Lett. 82, 2452 (2003); http://dx.doi.org/10.1063/1.1567807 (3 pages) | Cited 5 times

Online Publication Date: 7 April 2003

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We have developed a modified separation-by-implantation-of-oxygen (SIMOX) process for fabricating relaxed silicon–germanium-on-insulator (SGOI) substrates without using thick graded SiGe buffer structures. Oxygen ions are implanted into a pseudomorphically grown 115 nm Si0.86Ge0.14 layer, with the implant peak located slightly below the heterostructure interface. Following two annealing processes ( ∼ 800+1350 °C) instead of conventional one-step annealing ( ∼ 1350 °C) in traditional SIMOX, a buried silicon dioxide layer is created near the original SiGe/Si interface, resulting in a fully relaxed SGOI structure. Our results show that an annealing step at a moderate temperature ( ∼ 800 °C) leads to less Ge loss. © 2003 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing

Hot-phonon bottleneck in the photoinjected plasma in GaN

A. R. Vasconcellos, R. Luzzi, C. G. Rodrigues, and V. N. Freire

Appl. Phys. Lett. 82, 2455 (2003); http://dx.doi.org/10.1063/1.1566467 (3 pages) | Cited 9 times

Online Publication Date: 7 April 2003

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The evolution on the picosecond scale of the macroscopic (nonequilibrium thermodynamic) state of a highly excited photoinjected plasma in bulk GaN is analyzed. We present the equations of evolution for the quasitemperature (level of excitation) of the hot carriers and of the optical phonons. A hot-phonon temperature overshoot is evidenced, as well as a preferential production of phonons in excess of equilibrium in a reduced off-center region of the Brillouin zone. A comparative analysis of the influence of the length of the exciting laser pulse is also performed. © 2003 American Institute of Physics.
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72.30.+q High-frequency effects; plasma effects
72.80.Ey III-V and II-VI semiconductors
63.20.-e Phonons in crystal lattices
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