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14 Apr 2003

Volume 82, Issue 15, pp. 2371-2540

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2491 (2003); http://dx.doi.org/10.1063/1.1566791 (3 pages)

Jun Li, Qi Ye, Alan Cassell, Hou Tee Ng, Ramsey Stevens, Jie Han, and M. Meyyappan
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Waveguide fabrication in phosphate glasses using femtosecond laser pulses

James W. Chan, Thomas R. Huser, Subhash H. Risbud, Joseph S. Hayden, and Denise M. Krol

Appl. Phys. Lett. 82, 2371 (2003); http://dx.doi.org/10.1063/1.1565708 (3 pages) | Cited 69 times

Online Publication Date: 7 April 2003

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We report on the response of glass to focused femtosecond (fs) laser pulses during waveguide fabrication in a commercial sodium aluminum phosphate glass (Schott IOG-1). Single-pass longitudinal translation of IOG-1 glass with respect to the focused laser beam at a rate of 20 μm/s and pulse energies of 3.5 μJ results in the formation of two waveguides located on opposite sides of the laser-exposed region, which itself does not guide light. This behavior is different from that of the more widely studied silica glass system. The precise location of the waveguides in IOG-1 glass depends on the relative tilt of the fs laser beam with respect to the sample translation direction. Fluorescence imaging of the modified glass using a confocal microscope setup reveals the formation of color center defects in the exposed region but not within the waveguides. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques
42.79.Gn Optical waveguides and couplers
42.70.Ce Glasses, quartz
81.05.Kf Glasses (including metallic glasses)
42.62.Cf Industrial applications
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Photonic crystal microcavities for cavity quantum electrodynamics with a single quantum dot

Jelena Vučković and Yoshihisa Yamamoto

Appl. Phys. Lett. 82, 2374 (2003); http://dx.doi.org/10.1063/1.1567824 (3 pages) | Cited 68 times

Online Publication Date: 7 April 2003

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We propose a planar photonic crystal microcavity design specially tailored for cavity quantum electrodynamics with a single quantum dot emitter embedded in semiconductor. With quality factor up to 45 000, mode volume smaller than a cubic optical wavelength in material, and electric field maximum located in the high-refractive index region at the cavity center, this design can enable both strong coupling and lasing with a single quantum dot exciton. The achievable range of the quality factor to mode volume ratios and the feasible fabrication of the proposed structure make it favorable to other semiconductor microcavities. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
12.20.Fv Experimental tests
78.67.Hc Quantum dots
42.55.Px Semiconductor lasers; laser diodes
42.70.Qs Photonic bandgap materials
71.35.-y Excitons and related phenomena

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

Yae L. Okuno, Jon Geske, Kian-Giap Gan, Yi-Jen Chiu, Steven P. DenBaars, and John E. Bowers

Appl. Phys. Lett. 82, 2377 (2003); http://dx.doi.org/10.1063/1.1568162 (3 pages) | Cited 8 times

Online Publication Date: 7 April 2003

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We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
42.79.Bh Lenses, prisms and mirrors
42.82.-m Integrated optics

Finite-size effect on highly dispersive photonic-crystal optical components

Yong-Hong Ye, D.-Y. Jeong, Theresa S. Mayer, and Q. M. Zhang

Appl. Phys. Lett. 82, 2380 (2003); http://dx.doi.org/10.1063/1.1567808 (3 pages) | Cited 4 times

Online Publication Date: 7 April 2003

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This letter describes using the large near band edge dispersion in the effective refractive index (neff) of photonic crystals (PCs) to design PC lenses with focal lengths that are very sensitive to small differences in incident wavelength. Our calculations show that practical PCs of finite thickness exhibit an neff with a thickness dependent oscillatory behavior. This results in broadening of the focal spot size along the optical axis when the number of periods in the PC lens is small, which limits the wavelength sensitivity of the lens. These results demonstrate the importance in accounting for the finite-size effect when designing high performance optical devices or components that use the highly dispersive properties of PCs. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Bh Lenses, prisms and mirrors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.Gw Other integrated-optical elements and systems

Electro-optic sampling system with a single-crystal 4-N,N-dimethylamino-4′-N′-methyl-4-stilbazolium tosylate sensor

X. Zheng, S. Wu, Roman Sobolewski, R. Adam, M. Mikulics, P. Kordoš, and M. Siegel

Appl. Phys. Lett. 82, 2383 (2003); http://dx.doi.org/10.1063/1.1565508 (3 pages) | Cited 9 times

Online Publication Date: 7 April 2003

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We present an electro-optic (EO) sampling system based on an organic ionic salt crystal, 4-N,N-dimethylamino-4′-N′-methyl-4-stilbazolium tosylate (DAST) transducer. Compared to LiTaO3, the DAST lower dielectric permittivity and much higher electro-optic coefficient dramatically improveme electric-field coupling into the EO crystal, which results in a much better signal-to-noise ratio of the sampling system. Submillivolt signals can be easily measured with the DAST sensor. Time resolution of the DAST-based EO system is the same as that of the LiTaO3-based sampler. © 2003 American Institute of Physics.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
85.30.De Semiconductor-device characterization, design, and modeling
77.22.Ch Permittivity (dielectric function)

Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, and Noble M. Johnson

Appl. Phys. Lett. 82, 2386 (2003); http://dx.doi.org/10.1063/1.1568160 (3 pages) | Cited 26 times

Online Publication Date: 7 April 2003

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We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as low as 5 kA/cm2 for laser diodes with emission wavelengths between 368 nm and 378 nm and have demonstrated lasing at 363.2 nm at room temperature, the shortest wavelength yet reported for a semiconductor laser diode. The cw operation up to a heat sink temperature of 40 °C was demonstrated on a series of narrow ridge-waveguide devices processed with chemically assisted ion beam etched mirrors and high reflective coating on both facets. The shortest wavelength emission under cw operation conditions was 373.5 nm with output powers of more than 1 mW. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.67.De Quantum wells
42.79.Bh Lenses, prisms and mirrors
81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.St Quantum wells

Er3+-doped multicomponent sol-gel-processed silica glass for optical signal amplification at 1.5 μm

A. Biswas, G. S. Maciel, R. Kapoor, C. S. Friend, and P. N. Prasad

Appl. Phys. Lett. 82, 2389 (2003); http://dx.doi.org/10.1063/1.1567814 (3 pages) | Cited 30 times

Online Publication Date: 7 April 2003

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We have developed a multicomponent K–Er codoped silica-based sol-gel glass that presents high luminescence quantum yield (∼100 times larger than that of an Er-doped silica sol-gel glass) and long emission lifetime at 1.54 μm (17 ms). The glass was heat treated to melting temperature with the optical properties of the system remaining practically unchanged. The IR absorption data shows that the hydroxyl content of this multicomponent glass is drastically reduced to a few tens of parts per million by using optimized compositions. The maximum gain coefficient expected for this glass is ∼4.5 dB/cm at 1.5 μm. © 2003 American Institute of Physics.
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42.70.Hj Laser materials
42.70.Ce Glasses, quartz
78.55.Qr Amorphous materials; glasses and other disordered solids
81.05.Kf Glasses (including metallic glasses)
42.55.Rz Doped-insulator lasers and other solid state lasers
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Pg Disordered solids
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