APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Apr 2003

Volume 82, Issue 17, pp. 2749-2924

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
Enlarge Image | Read More
Page 3 of 3 Pages Previous Page | Jump to Page
back to top
RSS Feeds

Interfacial reaction during the epitaxial growth of yttrium on CaF2(111)

A. Borgschulte, S. Weber, and J. Schoenes

Appl. Phys. Lett. 82, 2898 (2003); http://dx.doi.org/10.1063/1.1569998 (3 pages) | Cited 5 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By means of Auger electron spectroscopy and in situ reflection high-energy electron diffraction (RHEED) the interfacial reaction during the epitaxial growth of yttrium on CaF2(111) has been studied. The RHEED patterns confirm a smooth Volmer–Weber growth mode. Auger electron spectroscopy evidences a strong interdiffusion of the film and substrate, leading to a compressive in-plane strain of the growing film. Using RHEED, we can follow the strain relaxation via misfit glides during growth. The development and crystalline orientation of the glides are characterized. © 2003 American Institute of Physics.
Show PACS
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
68.55.A- Nucleation and growth
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
79.20.Fv Electron impact: Auger emission
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties

Surface nanostructuring of borosilicate glass by femtosecond nJ energy pulses

Egidijus Vanagas, Igor Kudryashov, Dmitrii Tuzhilin, Saulius Juodkazis, Shigeki Matsuo, and Hiroaki Misawa

Appl. Phys. Lett. 82, 2901 (2003); http://dx.doi.org/10.1063/1.1570514 (3 pages) | Cited 25 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on a feature, that of hillock-shaped damage, formed on a glass surface by femtosecond pulses of tp = 180 fs [full width at half maximum (FWHM) value] duration produced by a recording beam focus with energy of 5 nJ/pulse at 800 nm wavelength (the corresponding irradiance of about 7.6 TW/cm2 was evaluated for a 0.68 μm FWHM spot size). Single hillocks of 40–50 nm height were recorded reproducibly in single-pulse irradiation. Surface nanopatterning over a large, curved area (over 200 μm2) can be achieved by implementing a confocal surface curvature tracking method that utilizes the reflection of a supplementary cw-laser beam. The ablation pattern achieved by this method is consistent with that of a Coulomb explosion. © 2003 American Institute of Physics.
Show PACS
81.16.Rf Micro- and nanoscale pattern formation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Fs Glasses

Electron emission from diamond nanoparticles on metal tips

T. Tyler, V. V. Zhirnov, A. V. Kvit, D. Kang, and J. J. Hren

Appl. Phys. Lett. 82, 2904 (2003); http://dx.doi.org/10.1063/1.1570498 (3 pages) | Cited 20 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-crystalline diamond nanoparticles (∼5 nm in scale) have been deposited onto molybdenum needles (with radii <100 nm), and their effects on field emission behavior were measured. Combined transmission electron microscopy observations, field emission measurements, and diamond depositions allowed for direct comparison of the effects of various amounts of nanodiamond coating on the field emission properties of a coated metal field emitter. In the limit, field emission from a single isolated diamond nanoparticle is compared here with that from an uncoated metal emitter and from a coating comprised of several layers of nanoparticles. © 2003 American Institute of Physics.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
68.37.Lp Transmission electron microscopy (TEM)
back to top
RSS Feeds

Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach

Robert Rehm, Harald Schneider, Martin Walther, Peter Koidl, and Günter Weimann

Appl. Phys. Lett. 82, 2907 (2003); http://dx.doi.org/10.1063/1.1570927 (3 pages) | Cited 9 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the influence of avalanche multiplication by impact ionization on the photoconductive gain and the noise gain in quantum-well infrared photodetectors (QWIPs). A quantitative method is presented allowing the avalanche multiplication factor M and its field dependence to be determined from the measured photoconductive gain and noise gain. The approach is demonstrated using an In0.30Ga0.70As/GaAs QWIP. © 2003 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.20.Ht High-field and nonlinear effects

Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors

J. Mimila-Arroyo, V. Cabrera, and S. W. Bland

Appl. Phys. Lett. 82, 2910 (2003); http://dx.doi.org/10.1063/1.1570512 (3 pages) | Cited 3 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate in situ thermal annealing of the carbon-doped GaAs base layer in GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition in order to eliminate hydrogen incorporation. The influence of the anneal on the carrier transport properties and on the burn-in effect is studied. Results show that the anneal reduces the burn-in effect due to an increase in the emitter minority carrier diffusion length which is caused by passivation of H+ recombination centers in the GaInP emitter layer. However, the anneal also degrades the base minority carrier diffusion length leading to a reduction in the current gain. © 2003 American Institute of Physics.
Show PACS
85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.25.+i Surface conductivity and carrier phenomena

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, and J. M. Tsai

Appl. Phys. Lett. 82, 2913 (2003); http://dx.doi.org/10.1063/1.1570519 (3 pages) | Cited 23 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By using organometallic vapor phase epitaxy, we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier UV photodiodes (PDs). It was found that we could significantly reduce the leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a −1 V reverse bias, it was found that the measured responsivity was around 0.1 and 0.37 A/W for samples A and B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT–GaN layer induced large RC time constant.© 2003 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

Ken Uchida and Shin-ichi Takagi

Appl. Phys. Lett. 82, 2916 (2003); http://dx.doi.org/10.1063/1.1571227 (3 pages) | Cited 50 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that carrier scattering induced by the thickness fluctuation of a silicon-on-insulator (SOI) film reduces electron mobility in ultrathin-body metal–oxide–semiconductor field-effect transistors with SOI thickness, TSOI, of less than 4 nm at room temperature and is the dominant scattering mechanism at low temperatures. The thickness fluctuation of a nanoscaled SOI film induces large potential variations due to the difference of quantum-confinement effects from one part to another, and thus carrier scattering potentials are formed in the channel. It is shown that experimental electron mobility follows the theoretical TSOI dependence and the expected temperature dependence of the scattering induced by SOI thickness fluctuation. © 2003 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.25.+i Surface conductivity and carrier phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
back to top
RSS Feeds

Decrease of the resonance bandwidth of micromechanical oscillators by phase control of the driving force

Javier Tamayo and Laura M. Lechuga

Appl. Phys. Lett. 82, 2919 (2003); http://dx.doi.org/10.1063/1.1571228 (3 pages) | Cited 7 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A method for controlling the amplitude response of micromechanical oscillators is presented. The micromechanical oscillator is driven by two forces acting both in phase, a fixed sinusoidal force and a feedback force whose amplitude depends on the phase shift. This dependence exhibits a pronounced maximum when the phase shift is 90°, i.e., at the resonant frequency. Experiments performed with a microcantilever prove that this class of active control decreases the bandwidth of the amplitude response about two orders of magnitude. The noise of the microcantilever, mainly of a thermal nature, is not increased at resonance, and it is moderately increased at both sides of the amplitude peak. Moreover, the noise can be tuned by adjusting the ratio between the two driving forces. © 2003 American Institute of Physics.
Show PACS
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Fq Vibration isolation
45.80.+r Control of mechanical systems

Nanotomography based on double asymmetrical Bragg diffraction

Marco Stampanoni, Gunther Borchert, Rafael Abela, and Peter Rüegsegger

Appl. Phys. Lett. 82, 2922 (2003); http://dx.doi.org/10.1063/1.1569428 (3 pages) | Cited 11 times

Online Publication Date: 21 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nondestructive investigations at ultrahigh spatial resolution can be carried out with synchrotron-based x-ray computer tomography. The performance of presently used detectors is restricted by scintillation properties, optical light transfer and charge coupled device granularity to a limit of 1 μm spatial resolution and efficiency of a few percent. A recently developed detector, called Bragg magnifier, exploits double asymmetrical Bragg diffraction to efficiently produce hard x-ray images with magnification factors up to 100×100 and pixel size of less than 200×200 nm2. Combining it with tomography, we obtained full volumetric information of a sample with spatial resolution well below 1 μm in less than 40 min.© 2003 American Institute of Physics.
Show PACS
81.70.Tx Computed tomography
07.85.Tt X-ray microscopes
Page 3 of 3 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close