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28 Apr 2003

Volume 82, Issue 17, pp. 2749-2924

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Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach

Robert Rehm, Harald Schneider, Martin Walther, Peter Koidl, and Günter Weimann

Appl. Phys. Lett. 82, 2907 (2003); http://dx.doi.org/10.1063/1.1570927 (3 pages) | Cited 9 times

Online Publication Date: 21 April 2003

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We investigate the influence of avalanche multiplication by impact ionization on the photoconductive gain and the noise gain in quantum-well infrared photodetectors (QWIPs). A quantitative method is presented allowing the avalanche multiplication factor M and its field dependence to be determined from the measured photoconductive gain and noise gain. The approach is demonstrated using an In0.30Ga0.70As/GaAs QWIP. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.20.Ht High-field and nonlinear effects

Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors

J. Mimila-Arroyo, V. Cabrera, and S. W. Bland

Appl. Phys. Lett. 82, 2910 (2003); http://dx.doi.org/10.1063/1.1570512 (3 pages) | Cited 3 times

Online Publication Date: 21 April 2003

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We investigate in situ thermal annealing of the carbon-doped GaAs base layer in GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition in order to eliminate hydrogen incorporation. The influence of the anneal on the carrier transport properties and on the burn-in effect is studied. Results show that the anneal reduces the burn-in effect due to an increase in the emitter minority carrier diffusion length which is caused by passivation of H+ recombination centers in the GaInP emitter layer. However, the anneal also degrades the base minority carrier diffusion length leading to a reduction in the current gain. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.25.+i Surface conductivity and carrier phenomena

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, and J. M. Tsai

Appl. Phys. Lett. 82, 2913 (2003); http://dx.doi.org/10.1063/1.1570519 (3 pages) | Cited 23 times

Online Publication Date: 21 April 2003

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By using organometallic vapor phase epitaxy, we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier UV photodiodes (PDs). It was found that we could significantly reduce the leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a −1 V reverse bias, it was found that the measured responsivity was around 0.1 and 0.37 A/W for samples A and B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT–GaN layer induced large RC time constant.© 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

Ken Uchida and Shin-ichi Takagi

Appl. Phys. Lett. 82, 2916 (2003); http://dx.doi.org/10.1063/1.1571227 (3 pages) | Cited 50 times

Online Publication Date: 21 April 2003

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We demonstrate that carrier scattering induced by the thickness fluctuation of a silicon-on-insulator (SOI) film reduces electron mobility in ultrathin-body metal–oxide–semiconductor field-effect transistors with SOI thickness, TSOI, of less than 4 nm at room temperature and is the dominant scattering mechanism at low temperatures. The thickness fluctuation of a nanoscaled SOI film induces large potential variations due to the difference of quantum-confinement effects from one part to another, and thus carrier scattering potentials are formed in the channel. It is shown that experimental electron mobility follows the theoretical TSOI dependence and the expected temperature dependence of the scattering induced by SOI thickness fluctuation. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.25.+i Surface conductivity and carrier phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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