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28 Apr 2003

Volume 82, Issue 17, pp. 2749-2924

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application

Sang-Yun Lee, Hyoungsub Kim, Paul C. McIntyre, Krishna C. Saraswat, and Jeong-Soo Byun

Appl. Phys. Lett. 82, 2874 (2003); http://dx.doi.org/10.1063/1.1569985 (3 pages) | Cited 63 times

Online Publication Date: 21 April 2003

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A metal–insulator–metal (MIM) capacitor using ZrO2 on tungsten (W) metal bottom electrode was demonstrated and characterized in this letter. Both ZrO2 and W metal were synthesized by an atomic layer deposition (ALD) method. High-quality 110 ∼ 115 Å ZrO2 films were grown uniformly on ALD W using ZrCl4 and H2O precursors at 300 °C, and polycrystalline ZrO2 in the ALD regime could be obtained. A 13 ∼ 14-Å-thick interfacial layer between ZrO2 and W was observed after fabrication, and it was identified as WOx through angle-resolved x-ray photoelectron spectroscopy analysis with wet chemical etching. The apparent equivalent oxide thickness was 20 ∼ 21 Å. An effective dielectric constant of 22 ∼ 25 including an interfacial WOx layer was obtained by measuring capacitance and thickness of MIM capacitors with Pt top electrodes. High capacitance per area (16 ∼ 17 fF/μm2) and low leakage current (10−7 A/cm2 at ±1 V) were achieved. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
85.40.Sz Deposition technology
85.30.Tv Field effect devices
77.22.Ch Permittivity (dielectric function)
79.60.Dp Adsorbed layers and thin films
79.60.Jv Interfaces; heterostructures; nanostructures

High tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed-laser deposition

S. G. Lu, X. H. Zhu, C. L. Mak, K. H. Wong, H. L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 82, 2877 (2003); http://dx.doi.org/10.1063/1.1569427 (3 pages) | Cited 76 times

Online Publication Date: 21 April 2003

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Compositionally graded barium strontium titanate [(BaxSr1−x)TiO3BST, x = 0.75, 0.8, 0.9, and 1.0] thin films are fabricated by pulsed-laser deposition on a LaAlO3 substrate with (La0.7Sr0.3)MnO3 as the bottom electrode. A high dielectric permittivity and temperature characteristic without Curie–Weiss law are obtained. A tunability of over 70% is obtained at frequency of 1 MHz, which is higher than that of single BST layer with the same compositions. All the results indicate that the graded thin films have better electrical properties than a single-layer film. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition

Dielectric properties of Pb(Zr20Ti80)O3/Pb(Zr80Ti20)O3 multilayered thin films prepared by rf magnetron sputtering

Can Wang, Q. F. Fang, Z. G. Zhu, A. Q. Jiang, S. Y. Wang, B. L. Cheng, and Z. H. Chen

Appl. Phys. Lett. 82, 2880 (2003); http://dx.doi.org/10.1063/1.1569658 (3 pages) | Cited 35 times

Online Publication Date: 21 April 2003

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A series of Pb(Zr,Ti)O3 (PZT) films with tetragonal/rhombohedral multilayered structures has been grown on Pt/TiO2/SiO2/Si substrates by rf magnetron sputtering at a relative low temperature. All the films comprise 12 periodicities of Pb(Zr20Ti80)O3/Pb(Zr80Ti20)O3 in constant thickness of 40 nm, but the layer thicknesses of tetragonal phase (dT) and rhombohedral phase (dR) in one periodicity are varied. The electric properties of the films are investigated as a function of dT/dR from 10/30 to 35/5. An enhanced dielectric property is observed in the multilayered films. Especially, a optimal value of dT/dR = 30/10 is obtained, where the dielectric constant reaches maximum value of 469 at 100 kHz with a loss tangent of 0.037, and the dielectric constant is about five times that of the single tetragonal phase PZT film formed under the identical condition. Moreover, the polarization also increases in the multilayered films, and remarkably, the film of 30/10 exhibits larger remanent polarization, lower coercive voltage, and more symmetric hysteresis than the other films. The enhancement of dielectric properties is attributed to the presence of interfaces between the tetragonal and the rhombohedral phase layer. This study suggests that the design of the multilayered PZT film capacitor with tetragonal and rhombohedral phase should be an effective way to enhance the dielectric and ferroelectric performance in devices. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.Ac Multilayers
77.80.Dj Domain structure; hysteresis
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
81.15.Cd Deposition by sputtering
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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