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28 Apr 2003

Volume 82, Issue 17, pp. 2749-2924

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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p-type conductivity in wide-band-gap BaCuQF (Q = S,Se)

Hiroshi Yanagi, Janet Tate, Sangmoon Park, Cheol-Hee Park, and Douglas A. Keszler

Appl. Phys. Lett. 82, 2814 (2003); http://dx.doi.org/10.1063/1.1571224 (3 pages) | Cited 18 times

Online Publication Date: 21 April 2003

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BaCuQF (Q = S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively, for the selenide fluoride. The conductivity was greatly enhanced by the substitution of several percent of K for Ba; the highest conductivities were 82 S/cm for Ba0.9K0.1CuSF and 43 S/cm for Ba0.9K0.1SeF. The band gaps for Q = S and Q = Se were measured to be 3.2 and 3.0 eV, respectively. Undoped BaCuSF exhibits strong red luminescence near 630 nm under ultraviolet excitation. © 2003 American Institute of Physics.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Pa Thermoelectric and thermomagnetic effects
78.55.Hx Other solid inorganic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Yow-Jon Lin, Zhen-Dao Li, Chou-Wei Hsu, Feng-Tso Chien, Ching-Ting Lee, Sheng-Tien Shao, and Hsing-Cheng Chang

Appl. Phys. Lett. 82, 2817 (2003); http://dx.doi.org/10.1063/1.1569991 (3 pages) | Cited 11 times

Online Publication Date: 21 April 2003

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The mechanism of ohmic contact degradation for the oxidized Au/Ni/Mg-doped GaN under various annealing times has been investigated. According to the results from x-ray photoelectron spectroscopy and the Cserveny’s concept, we found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance (ρc) of oxidized Au/Ni/Mg-doped GaN. This suggests that the NiOx plays an important role in increasing (or reducing) the ρc of oxidized Au/Ni/Mg-doped GaN. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.61.Ey III-V semiconductors
73.40.Cg Contact resistance, contact potential
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing

Field-induced relaxation of bulk composition due to internal boundaries

J. Jamnik, X. Guo, and J. Maier

Appl. Phys. Lett. 82, 2820 (2003); http://dx.doi.org/10.1063/1.1570513 (3 pages) | Cited 12 times

Online Publication Date: 21 April 2003

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The establishment of compositional variations in solids caused by an external electric field usually requires electrodes that block either electronic or ionic charge carriers. Here we present unambiguous experimental and theoretical evidence that the compositional variations can occur even in the case of completely nonblocking electrodes if grain boundaries are present. In addition to the proper grain boundary impedance arc characterized by the dielectric relaxation time, τ, a second arc occurs at much lower frequencies (τδ). It is shown that this low-frequency response refers to a chemical relaxation (Warburg diffusion) induced by the selectively blocking grain boundary. The effect is the analogue to the chemical relaxation induced by selectively blocking electrodes (cf. Wagner–Hebb polarization).© 2003 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
61.72.Mm Grain and twin boundaries
77.22.Gm Dielectric loss and relaxation

Bound-exciton-induced current bistability in a silicon light-emitting diode

J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, and M. Helm

Appl. Phys. Lett. 82, 2823 (2003); http://dx.doi.org/10.1063/1.1570920 (3 pages) | Cited 2 times

Online Publication Date: 21 April 2003

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A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current–voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p–n junction diodes. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Frequency multiplication of microwave radiation by propagating space-charge domains in a semiconductor superlattice

R. Scheuerer, M. Haeussler, K. F. Renk, E. Schomburg, Yu. I. Koschurinov, D. G. Pavelev, N. Maleev, V. Ustinov, and A. Zhukov

Appl. Phys. Lett. 82, 2826 (2003); http://dx.doi.org/10.1063/1.1569999 (3 pages) | Cited 5 times

Online Publication Date: 21 April 2003

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We report on frequency multiplication of microwave radiation by propagating space-charge domains in a semiconductor superlattice; the domains were due to a negative differential mobility of miniband electrons. We irradiated an arrangement of two GaAs/AlAs superlattices, mounted in a rectangular waveguide system, with microwave radiation (frequency near 70 GHz) and observed the generation of harmonics; the conversion of radiation power to the third harmonic showed a remarkable efficiency (5%). A theoretical study, based on a drift-diffusion model for the miniband electrons, suggests that the microwave radiation has driven the formation and annihilation of space-charge domains and that the resulting anharmonic current was the source of the frequency-multiplied radiation. Our results indicate that frequency multiplication by space-charge domains in a semiconductor superlattice can be exploited for efficient generation of submillimeter-wave radiation. © 2003 American Institute of Physics.
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84.40.Az Waveguides, transmission lines, striplines
73.63.Hs Quantum wells
73.21.Cd Superlattices
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
78.70.Gq Microwave and radio-frequency interactions

Cu depletion at the CuInSe2 surface

Dongxiang Liao and Angus Rockett

Appl. Phys. Lett. 82, 2829 (2003); http://dx.doi.org/10.1063/1.1570516 (3 pages) | Cited 29 times

Online Publication Date: 21 April 2003

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The chemical composition of the (112)B surface of epitaxial CuInSe2 thin films is investigated by angle resolved x-ray photoelectron spectroscopy. Results show that a severe Cu depletion exists in the top 1–2 atomic layers. No bulk second phase is found at the surface. The source of this depletion and its relation to the Cd doping at the CdS/CuInSe2 interface are discussed. © 2003 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.55.-a Thin film structure and morphology

The use of Simmons’ equation to quantify the insulating barrier parameters in Al/AlOx/Al tunnel junctions

L. S. Dorneles, D. M. Schaefer, M. Carara, and L. F. Schelp

Appl. Phys. Lett. 82, 2832 (2003); http://dx.doi.org/10.1063/1.1569986 (3 pages) | Cited 17 times

Online Publication Date: 21 April 2003

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We have analyzed the electron transport processes in Al/AlOx/Al junctions. The samples were produced by glow-discharge-assisted oxidation of the bottom electrode. The nonlinear I–V curves of 17 samples were measured at room temperature, being very well fitted using the Simmons’ equation with the insulating barrier thickness, barrier height, and the junction area as free parameters. An exponential growth of the area normalized electrical resistance with thickness is obtained, using just values from I–V curve simulations. The effective tunneling area corresponding to the “hot spots” can be quantified and is five orders of magnitude smaller than the physical area in the studied samples. © 2003 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
73.61.Ng Insulators
73.40.Gk Tunneling
52.77.Dq Plasma-based ion implantation and deposition
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.65.Mq Oxidation

Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance

A. Stesmans and V. V. Afanas’ev

Appl. Phys. Lett. 82, 2835 (2003); http://dx.doi.org/10.1063/1.1540245 (3 pages) | Cited 10 times

Online Publication Date: 21 April 2003

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Electron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of ESR-active defects are generated, indicating the drastic impact and jeopardizing inference of intrinsic device properties. © 2003 American Institute of Physics.
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76.30.Mi Color centers and other defects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors

Lars Zimmermann, Joachim John, Stefan Degroote, Gustaaf Borghs, Chris Van Hoof, and Stefan Nemeth

Appl. Phys. Lett. 82, 2838 (2003); http://dx.doi.org/10.1063/1.1569042 (3 pages) | Cited 2 times

Online Publication Date: 21 April 2003

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We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 μm. Standard metamorphic InGaAs or IR-transparent InAlAs buffers were grown by molecular-beam epitaxy. We studied dark current and photocurrent as a function of buffer thickness, buffer material, and temperature. A saturation of the dark current with buffer thickness was not observed. The maximum resistance area product was ∼10 Ω cm2 at 295 K. The dark current above 200 K was dominated by generation–recombination current. A pronounced dependence of the photocurrent on the buffer thickness was observed. The peak external quantum efficiency was 46% (at 1.6 μm) without antireflective coating. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Dw Photodiodes; phototransistors; photoresistors
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN

W. Zhang, Abul K. Azad, and D. Grischkowsky

Appl. Phys. Lett. 82, 2841 (2003); http://dx.doi.org/10.1063/1.1569988 (3 pages) | Cited 29 times

Online Publication Date: 21 April 2003

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We report the characterization of the complex conductivity and dielectric function of GaN by terahertz time-domain spectroscopy. Transmission measurements are performed on an n-type, 180-μm-thick, freestanding GaN crystal. Frequency dependent electron dynamics, power absorption and optical dispersion are observed over the frequency range from 0.1 to 4.0 THz. The measured conductivity is well fit by Drude theory. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.50.Mx High-frequency effects; plasma effects
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
77.22.Ch Permittivity (dielectric function)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.55.-a Thin film structure and morphology

Varistor action in zinc oxide suspension

K. Negita, T. Yamaguchi, T. Tsuchie, and N. Shigematsu

Appl. Phys. Lett. 82, 2844 (2003); http://dx.doi.org/10.1063/1.1569659 (3 pages) | Cited 1 time

Online Publication Date: 21 April 2003

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In a suspension composed of zinc oxide (ZnO) particles and silicone oil, it is found that the current density dramatically increases above a specific electric field (break down field Eb). In ac measurement, the nonlinear coefficient (α), which characterizes the relationship between current density J and the electric field E as J∝Eα, changes from ∼1 to ∼30 when increasing the electric field through Eb. On the basis of the α value, temperature dependence of Eb, etc., the mechanism of the fluid varistor is briefly discussed. © 2003 American Institute of Physics.
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47.85.Np Fluidics
83.80.Gv Electro- and magnetorheological fluids
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
77.22.Jp Dielectric breakdown and space-charge effects
82.70.Kj Emulsions and suspensions
85.30.-z Semiconductor devices
83.80.Hj Suspensions, dispersions, pastes, slurries, colloids
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