APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

5 May 2003

Volume 82, Issue 18, pp. 2939-3130

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
Enlarge Image | Read More
Page 1 of 3 Pages Next Page | Jump to Page
back to top
RSS Feeds

Narrow-band polarized light emission from organic microcavity fabricated by sol-gel technique

Qinghai Song, Liying Liu, Tao Ling, Lei Xu, and Wencheng Wang

Appl. Phys. Lett. 82, 2939 (2003); http://dx.doi.org/10.1063/1.1571955 (3 pages) | Cited 4 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the fabrication and optical properties of an organic light-emitting microcavity. The cavity is a laser dye-doped polycarbonate film sandwiched between two Bragg reflectors, fabricated by alternately depositing TiO2 and SiO2 sol-gel thin films. Reflectivity up to 98% was achieved using the Bragg reflectors. The cavity has a photonic band gap between 597 and 789 nm with a defect state inside the gap. Narrow-band optical pumped light emission from the cavity and its polarization dependence were observed. A cavity quality factor as high as 354 was achieved. Angular and polarization dependence of light emission were analyzed using the transfer matrix method. All experimental results agree well with theoretical calculations. © 2003 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Tunable distributed feedback laser with photonic crystal mirrors

S. Mahnkopf, M. Kamp, A. Forchel, and R. März

Appl. Phys. Lett. 82, 2942 (2003); http://dx.doi.org/10.1063/1.1571662 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the development of a tunable laser diode based on InP using photonic crystal mirrors. The laser consists of two longitudinally coupled ridge waveguide segments that are coupled through a photonic crystal mirror segment. A laterally defined binary superimposed grating provides a distributed feedback in each of the cavities. Quasi-continuous tuning is achieved in a 24.5 nm window with 56 channels as typically required by wavelength division multiplexing applications. © 2003 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Tv Photonic crystal lasers and coherent effects
42.60.Fc Modulation, tuning, and mode locking
42.79.Bh Lenses, prisms and mirrors
42.70.Qs Photonic bandgap materials

Normal-mode anisotropic liquid-crystal gels

Yun-Hsing Fan, Hongwen Ren, and Shin-Tson Wu

Appl. Phys. Lett. 82, 2945 (2003); http://dx.doi.org/10.1063/1.1571663 (3 pages) | Cited 20 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A normal-mode anisotropic liquid-crystal (LC) gel is demonstrated. In the absence of an electric field, the light polarized along the rubbing direction is scattered. In the voltage-on state, the gel is highly transparent and is independent of polarization. Such a normal mode LC gel exhibits a modest contrast ratio, response time, and low operating voltage. It can be used as a broadband switchable polarizer, variable optical attenuator, and reflective display. © 2003 American Institute of Physics.
Show PACS
42.70.Df Liquid crystals
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
61.30.Vx Polymer liquid crystals
82.70.Gg Gels and sols
61.25.H- Macromolecular and polymers solutions; polymer melts
78.20.Jq Electro-optical effects

Time evolution of depletion region in poled silica

A. L. C. Triques, I. C. S. Carvalho, M. F. Moreira, H. R. Carvalho, R. Fischer, B. Lesche, and W. Margulis

Appl. Phys. Lett. 82, 2948 (2003); http://dx.doi.org/10.1063/1.1572472 (3 pages) | Cited 14 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electric field recorded in silica samples thermally poled during various intervals was measured by etching. The field is nearly uniform and increases to a maximum ( ∼ 3.6×108 V/m) in few minutes of poling and subsequently decreases slowly toward a steady level ( ∼ 1.4×108 V/m). The depletion layer becomes neutral even before the field reaches steady state. An upper limit of (0.7±0.2) μm was found for the thickness of the negatively charged edge of the depletion region. The value of χ(3) is the same for all poling times. © 2003 American Institute of Physics.
Show PACS
77.22.Ej Polarization and depolarization
42.70.Ce Glasses, quartz
81.65.Cf Surface cleaning, etching, patterning
42.65.An Optical susceptibility, hyperpolarizability

Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate

José M. Zanardi Ocampo, Pablo O. Vaccaro, Shanmugam Saravanan, Kazuyoshi Kubota, and Tahito Aida

Appl. Phys. Lett. 82, 2951 (2003); http://dx.doi.org/10.1063/1.1570925 (3 pages) | Cited 1 time

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Edge-emitting InGaAs/GaAs laser diodes were grown on patterned GaAs (311)A-oriented substrates. Due to the amphoteric properties of Si as a dopant in high-index GaAs, a device with a lateral p–n junction was obtained. CW lasing was observed up to 200 K. The dependence of the threshold current with temperature was measured. The characteristic temperatures were T0 = 180 and T0 = 57 K for experimental temperatures below and above 100 K, respectively, meaning that the carrier confinement structure must be improved. Quantitative results of the cavity gain were experimentally obtained. © 2003 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Third-order nonlinearities in silicon at telecom wavelengths

M. Dinu, F. Quochi, and H. Garcia

Appl. Phys. Lett. 82, 2954 (2003); http://dx.doi.org/10.1063/1.1571665 (3 pages) | Cited 142 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 μm using femtosecond pulses and a balanced Z-scan technique. A phase shift sensitivity of the order of 1 mrad is achieved, enabling the accurate measurement of third-order nonlinear coefficients at fluences smaller than 100 μJ/cm2. From the two-photon absorption coefficient (β∼0.8 cm/GW) and the Kerr coefficient (n2 ∼ 4×10−14 cm2/W) at a wavelength λ = 1.54 μm, a value F ∼ 0.35 for the nonlinear figure of merit for all-optical switching is determined. © 2003 American Institute of Physics.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.-k Nonlinear optics

Demonstration of a nanophotonic switching operation by optical near-field energy transfer

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages) | Cited 63 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have demonstrated the operation of a nanophotonic switch that uses three CuCl quantum cubes with a size ratio of 1:√2:2. The switching mechanism is based on resonant optical near-field energy transfer between the resonant quantized excitonic energy levels of the quantum cubes. Using near-field optical spectroscopy, we observed a switching rise time of less than 100 ps and a repetition rate of 80 MHz. These results suggest the possibility of making a nanophotonic switching device smaller than 20 nm with a figure of merit 10–100 times higher than that of a conventional photonic switch. © 2003 American Institute of Physics.
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Room-temperature electro-optic up-conversion via internal photoemission

K. J. Russell, Ian Appelbaum, H. Temkin, C. H. Perry, V. Narayanamurti, M. P. Hanson, and A. C. Gossard

Appl. Phys. Lett. 82, 2960 (2003); http://dx.doi.org/10.1063/1.1571981 (3 pages) | Cited 26 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We describe the fabrication and operation of a device which performs linear optical up-conversion at room temperature. The mechanism for up-conversion is based on internal photoemission from a Schottky contact. We then describe the voltage dependence of this device and interpret it in terms of total energy conservation. Although an AlGaAs/GaAs system is employed here, the functionality is not material-specific and therefore should be widely applicable to different materials systems, such as GaN/InGaN. © 2003 American Institute of Physics.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Jb Light-emitting devices

Single spatial mode selection in a layered square microcavity laser

Hee-Jong Moon, Kyungwon An, and Jai-Hyung Lee

Appl. Phys. Lett. 82, 2963 (2003); http://dx.doi.org/10.1063/1.1572966 (3 pages) | Cited 16 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a scheme for mode selection in a square-shaped two-dimensional layered microcavity laser. By using a fused-silica square-shaped capillary containing a dye-doped liquid as a layered microcavity, whose refractive index was smaller than that of the fused silica, we could realize our idea for single spatial-mode lasing. By analyzing the amount of peak shift induced by varying the refractive index of inner liquid, we could confirm that the lasing modes originate by the free-running trajectories that are constrained on the outer layer by the presence of the inner boundary in such a way that only the ray having a refraction angle of 45° in the inner gain layer could be selected. © 2003 American Institute of Physics.
Show PACS
42.55.Sa Microcavity and microdisk lasers
42.55.Mv Dye lasers
42.60.Fc Modulation, tuning, and mode locking

Dry-etching method for fabricating photonic-crystal waveguides in nonlinear-optical polymers

Shin-ichiro Inoue, Kotaro Kajikawa, and Yoshinobu Aoyagi

Appl. Phys. Lett. 82, 2966 (2003); http://dx.doi.org/10.1063/1.1572962 (3 pages) | Cited 10 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nonlinear optical (NLO) polymer is proposed as one of the best candidates for nonlinear photonic crystal (PC) waveguides. A dry etching technique for this material is established at the suboptical wavelength scale needed to fabricate NLO polymer PC waveguides, with the good processability achieved in this material demonstrated by the successful fabrication of a PC waveguide in NLO polymer. Sharp resonances originating from coupling to photonic band modes are observed in the optical reflectance spectra of this waveguide, with resonant frequencies found to depend on the angle and in-plane propagation lattice direction of incident light. © 2003 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
42.65.Wi Nonlinear waveguides
42.70.Jk Polymers and organics
42.82.Cr Fabrication techniques; lithography, pattern transfer

Stacking and translation of microscopic particles by means of 2×2 beams emitted from a vertical-cavity surface-emitting laser array

Fumika Sumiyama, Yusuke Ogura, and Jun Tanida

Appl. Phys. Lett. 82, 2969 (2003); http://dx.doi.org/10.1063/1.1570939 (3 pages) | Cited 2 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on an optical manipulation method to achieve stacking of multiple particles by simultaneous emission of vertical-cavity surface-emitting laser sources. In the experiment, up to seven polystyrene particles of 10-μm diameter were stacked vertically by illuminating 2×2 beams. Furthermore, we could translate the particles keeping the stacked state without mechanical movement. The maximum number of stackable particles was obtained when the focal spots of the beams were located 20 μm above the sample stage. We also found that the relation between the spot pitch and the particle diameter is an important factor to achieve stacking. This manipulation method is expected to be useful for microfabrication of a three-dimensional structure and collective translation of materials capsuled in microparticles. © 2003 American Institute of Physics.
Show PACS
81.16.-c Methods of micro- and nanofabrication and processing
42.62.-b Laser applications
back to top
RSS Feeds

Polarized Raman scattering of impurity modes in beryllium-doped cubic boron nitride single crystals

Kenji Watanabe, Takashi Taniguchi, Hisao Kanda, and Elena M. Shishonok

Appl. Phys. Lett. 82, 2972 (2003); http://dx.doi.org/10.1063/1.1569989 (3 pages) | Cited 4 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Impurity-induced modes at 212 and 535 cm−1 have been studied by using Raman scattering spectroscopy in Be-doped cubic boron nitride single crystals, which have been grown by the temperature-gradient method under high pressure. Those bands show prominent polarization properties of T2 and A1 modes for the 212 and 535 cm−1 bands, respectively. Based on the polarization properties and a simple calculation of a molecular model, the origin of the bands is explained by postulating resonance modes of substitutional Be with a weak force constant between the host atoms and the Be. Anomalies of a forbidden transverse optical mode and the T2 mode due to phonon–plasma coupling caused by photoexcited free carriers have been also observed in high excitation density. © 2003 American Institute of Physics.
Show PACS
63.20.Pw Localized modes
63.20.kk Phonon interactions with other quasiparticles
78.30.Fs III-V and II-VI semiconductors

White light emission from radical carbonyl-terminations in Al2O3–SiO2 porous glasses with high luminescence quantum efficiencies

Tomokatsu Hayakawa, Ai Hiramitsu, and Masayuki Nogami

Appl. Phys. Lett. 82, 2975 (2003); http://dx.doi.org/10.1063/1.1569038 (3 pages) | Cited 25 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Development of white phosphors with highly emissive, stable, and less toxic characteristics has been important for display and lighting technology. In this letter, it is shown that sol-gel-derived glasses of aluminosilicate composition, followed by a heat treatment in air at low temperatures around 500 °C, exhibit two intense, visible photoluminescence bands: One is due to point defects in these glasses and the other comes from radical carbonyl-terminations on the surface of pores. The photoluminescence provides a white light with high luminescence quantum efficiency (∼66.5%) under long-wavelength ultraviolet excitation. © 2003 American Institute of Physics.
Show PACS
78.55.Mb Porous materials
78.55.Qr Amorphous materials; glasses and other disordered solids
42.70.Ce Glasses, quartz
81.05.Kf Glasses (including metallic glasses)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Rm Porous materials; granular materials

Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Z. Yu, C. D. Overgaard, R. Droopad, M. Passlack, and J. K. Abrokwah

Appl. Phys. Lett. 82, 2978 (2003); http://dx.doi.org/10.1063/1.1572478 (3 pages) | Cited 27 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report effusive evaporation of Ga2O3 thin films on GaAs(001) substrates in a production-type molecular-beam epitaxy system. A polycrystalline Ga2O3 charge heated in a high-temperature effusion cell is used as the evaporation source. The Ga2O3–GaAs structures are characterized by atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS), ellipsometry, and transmission electron microscopy (TEM). The Ga2O3 films are amorphous and stoichiometric by transmission electron diffraction and RBS, respectively. Under optimal growth conditions, the Ga2O3 film surface has a typical roughness of 2–3 Å as revealed by AFM, while the Ga2O3–GaAs interface is atomically abrupt as confirmed by the cross-sectional TEM. Such amorphous and stoichiometric Ga2O3 oxide paves the way for GaAs gate dielectrics applications. © 2003 American Institute of Physics.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Ps Atomic force microscopy (AFM)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.37.Lp Transmission electron microscopy (TEM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ct Interface structure and roughness

Identification of hexagonal polycrystal in epitaxially grown InN by synchrotron x-ray diffraction and near-edge x-ray absorption fine structure spectroscopy

Ik Jae Lee, Hyun-Joon Shin, Suk Sang Chang, Min Kyu Lee, and Hyung-Kook Kim

Appl. Phys. Lett. 82, 2981 (2003); http://dx.doi.org/10.1063/1.1572475 (3 pages) | Cited 3 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structures and crystallographic orientations of indium nitride films of varying thicknesses on sapphire(0001) were investigated using high-resolution synchrotron x-ray scattering and angle-dependent near-edge x-ray absorption fine structure (NEXAFS) spectroscopy with linearly polarized x rays. The x-ray scattering data showed that epitaxially grown InN films have a polycrystalline structure when their thickness is greater than 3000 Å. The N 1s NEXAFS spectra of thin films have a strong polarization-dependent spectral feature resulting from the preferred c-axis orientation. This polarization dependence decreases as the film thickness increases and is not present in the spectra of films that are more than 3000 Å thick. These results indicate that the c axis has a preferred orientation in thin films, but that this orientation is random in thick films, which have a polycrystalline hexagonal structure. © 2003 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
78.70.Dm X-ray absorption spectra
61.05.cp X-ray diffraction

A valence electron concentration criterion for glass-formation ability of metallic liquids

Q. Jiang, B. Q. Chi, and J. C. Li

Appl. Phys. Lett. 82, 2984 (2003); http://dx.doi.org/10.1063/1.1571984 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Critical cooling rate of a metallic liquid (Rc) necessary to form glass is correlated to the valence concentration e/a of the liquid (e and a denote valence and atom number in a unit cell, respectively). Rc of liquid is minimized at e/a = 3.5. The principles of the composition design to form bulk metallic glasses are as follows: e/a = 3.5, the component number (n) in the alloy is larger than three, and the component percentage of the ith component (xi) approaches 1/n. © 2003 American Institute of Physics.
Show PACS
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.43.Fs Glasses

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. H. Macdonald, H. Maeckel, S. Doshi, W. Brendle, A. Cuevas, J. S. Williams, and M. J. Conway

Appl. Phys. Lett. 82, 2987 (2003); http://dx.doi.org/10.1063/1.1572469 (3 pages) | Cited 3 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Carrier lifetime measurements have been used to characterize residual defects after low-energy implanting of silicon ions followed by high-temperature annealing (900 or 1000 °C). The implant was found to result in two distinct regions of lifetime-reducing damage. First, a high recombination region, most likely due to stable dislocation loops, remained near the surface. In addition, deeply propagated defects, which were not present prior to annealing, were also detected. These deep defects, which are possibly silicon interstitials, diffuse so rapidly during annealing that their distribution becomes effectively uniform to a depth of 100 microns. Annealing at higher temperatures was found to reduce the severity of both the surface and the deeply propagated defects. © 2003 American Institute of Physics.
Show PACS
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.Lk Linear defects: dislocations, disclinations

Influence of MgO substrate miscut on domain structure of pulsed laser deposited SrxBa1−xNb2O6 as characterized by x-ray diffraction and spectroscopic ellipsometry

C. M. Rouleau, G. E. Jellison, and D. B. Beach

Appl. Phys. Lett. 82, 2990 (2003); http://dx.doi.org/10.1063/1.1572464 (3 pages) | Cited 9 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Pulsed laser deposition has been used to grow highly oriented SrxBa1−xNb2O6 (SBN:x) on (001)MgO and miscut MgO (2° off 001 toward 100) in the presence of a pulsed O2 jet. The target stoichiometry was SBN:52±1.5%, but films grown at 700 °C were cation deficient and had a final composition of SBN:61±1.5%. Visually, the films were specular, but spectroscopic ellipsometry measurements showed they were highly absorbing, requiring a short anneal in O2 at 700 °C to make them fully transparent. Pole figure analysis indicated that a thick 626±1 nm film consisted of the characteristic antiphase domain structure of SBN, but four antiphase domains were found in a thin 185±1 nm film. However, the formation of these additional domains was suppressed in a 165±1 nm film grown on miscut MgO. Spectroscopic ellipsometry measurements have been made to measure surface and interface roughness, film thickness, as well as the spectroscopic refractive index and extinction coefficient of the films. © 2003 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.80.-e Ferroelectricity and antiferroelectricity
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ct Interface structure and roughness

Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size

Maria Losurdo, Maria Michela Giangregorio, Pio Capezzuto, Giovanni Bruno, M. F. Cerqueira, E. Alves, and M. Stepikhova

Appl. Phys. Lett. 82, 2993 (2003); http://dx.doi.org/10.1063/1.1569052 (3 pages) | Cited 33 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. A Tauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy. © 2003 American Institute of Physics.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.66.Db Elemental semiconductors and insulators
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Very efficient light emission from bulk crystalline silicon

Thorsten Trupke, Jianhua Zhao, Aihua Wang, Richard Corkish, and Martin A. Green

Appl. Phys. Lett. 82, 2996 (2003); http://dx.doi.org/10.1063/1.1572473 (3 pages) | Cited 72 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Due to its indirect bandstructure, bulk crystalline silicon is generally regarded as a poor light emitter. In contrast to this common perception, we report here on surprisingly large external photoluminescence quantum efficiencies of textured bulk crystalline silicon wafers of up to 10.2% at T = 130 K and of 6.1% at room temperature. Using a theoretical model to calculate the escape probability for internally generated photons, we can conclude from these experimental figures that the radiative recombination probability or internal luminescence quantum efficiency exceeds 20% at room temperature. © 2003 American Institute of Physics.
Show PACS
78.55.Ap Elemental semiconductors

CuAu-I-type ordered structures in InxAl1−xAs epilayers grown on (001) InP substrates

Ho Seong Lee and Jeong Yong Lee

Appl. Phys. Lett. 82, 2999 (2003); http://dx.doi.org/10.1063/1.1572535 (3 pages) | Cited 2 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Transmission electron microscopy (TEM) measurements were carried out to investigate the spontaneously ordered structure in InxAl1−xAs epitaxial layers grown on (001) InP substrates. The selected area diffraction pattern showed two sets of superstructure reflections with symmetrical intensity at (100) and (010) positions, indicating that CuAu-I-type ordered structures with two different variants were formed in the InxAl1−xAs epitaxial layers. The dark-field TEM image showed that the size of the CuAu-I-type ordered domains with a needle-like shape was approximately 3 ∼ 4 nm thick, with lengths ranging from 10 to 20 nm. Based on the TEM results, explanations are given to describe the formation of only two variants of CuAu-I-type ordering. © 2003 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Lp Transmission electron microscopy (TEM)

Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN

Qing Yang, Henning Feick, and Eicke R. Weber

Appl. Phys. Lett. 82, 3002 (2003); http://dx.doi.org/10.1063/1.1570943 (3 pages) | Cited 14 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Excitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy of 25 meV. The donor binding energy, bound-exciton localization energy, and bound-exciton lifetime are discussed in comparison with the values observed for ON and SiGa in the same sample. Nitrogen vacancies VN forming a hydrogenic donor state are suggested to be the most likely origin of this luminescence emission. Finally, a metastable behavior related to the damage-induced defects is reported and discussed in conjunction with interstitial-nitrogen-related defects. © 2003 American Institute of Physics.
Show PACS
71.55.Eq III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
61.72.J- Point defects and defect clusters

Boundary migration in Zn bicrystal induced by a high magnetic field

A. D. Sheikh-Ali, D. A. Molodov, and H. Garmestani

Appl. Phys. Lett. 82, 3005 (2003); http://dx.doi.org/10.1063/1.1572536 (3 pages) | Cited 16 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A bicrystal of Zn with an originally flat 89° 〈10math0〉 symmetric tilt boundary was annealed in a magnetic field of 25 T. The boundary migrated under the action of a magnetic driving force in the direction of the grain with higher diamagnetic susceptibility. In addition, the boundary changed its crystallographic orientation, decreasing length and becoming almost perpendicular to the free surfaces. The results were interpreted in terms of magnetically forced grain boundary motion due to the anisotropy of the magnetic susceptibility in Zn. The absolute boundary mobility was measured to be about 5.1×10−9 m4/J s. © 2003 American Institute of Physics.
Show PACS
61.72.Mm Grain and twin boundaries
75.20.En Metals and alloys
75.80.+q Magnetomechanical effects, magnetostriction

Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

Nelson Tansu, Jeng-Ya Yeh, and Luke J. Mawst

Appl. Phys. Lett. 82, 3008 (2003); http://dx.doi.org/10.1063/1.1572470 (3 pages) | Cited 16 times

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well (QW) surrounded by (In)GaAsP direct barrier layers is investigated. We found that growth pause annealing with AsH3, performed immediately before and after the growth of the QW, significantly improves the optical quality of InGaAsN QW with (In)GaAsP direct barriers. The utilization of larger band gap barrier materials, such as InGaAsP or GaAsP, will potentially lead to reduced carrier leakage from the QW laser structures. © 2003 American Institute of Physics.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.67.De Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
68.65.Fg Quantum wells
81.07.St Quantum wells

Selective oxidation behavior of W/WN/polycrystalline-Si1−xGex gate structure in H2O+H2 ambient

Tae-Hang Ahn, In-Seok Yeo, Joong-Jung Kim, Jae-Sung Roh, and Jung-Ho Lee

Appl. Phys. Lett. 82, 3011 (2003); http://dx.doi.org/10.1063/1.1572961 (3 pages)

Online Publication Date: 29 April 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Selective oxidation behavior, i.e., oxidation of polycrystalline-Si1−xGex (poly-SiGe) without metal oxidation, of the W/WN/poly-SiGe structure was investigated for gate electrode applications. While the dry oxidized samples showed a dramatic increase of the oxidation rate with increasing Ge content, the oxidation rate in the selectively oxidized (in a H2O+H2 ambient) samples was found to be very low irrespective of the Ge content. The oxides grown in a H2O+H2 ambient are identified to be only SiO2 even up to 60% Ge, other than the dry oxidized samples that consist of nearly pure SiO2 underneath a mixed oxide alloy of (Si,Ge)Ox. Different oxidation mechanisms based on the competition between the oxidation rate and the Ge diffusion rate in Si are suggested to explain a remarkable difference in the oxide thickess and composition. For dependable applications of poly-SiGe in metal-shunted gate structures, this oxidation feature enables a very clean sidewall profile with an improved reliability of gate oxides after selective oxidation process. © 2003 American Institute of Physics.
Show PACS
81.65.Mq Oxidation
66.30.J- Diffusion of impurities
Page 1 of 3 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close