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5 May 2003

Volume 82, Issue 18, pp. 2939-3130

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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Rubbing-induced polar ordering in nylon-11

Seok-Cheol Hong, Chun Zhang, and Y. R. Shen

Appl. Phys. Lett. 82, 3068 (2003); http://dx.doi.org/10.1063/1.1570937 (3 pages) | Cited 4 times

Online Publication Date: 29 April 2003

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Sum-frequency vibrational spectroscopy was used to show that mechanical rubbing could induce domains of ferroelectric ordering in films of odd-numbered nylon. In each domain, the dipole groups of NH and CO were aligned perpendicular to the rubbing direction and parallel to the surface. © 2003 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
78.66.Qn Polymers; organic compounds
77.80.Dj Domain structure; hysteresis
78.30.Jw Organic compounds, polymers

Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

A. Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, J. S. Cross, and M. Tsukada

Appl. Phys. Lett. 82, 3071 (2003); http://dx.doi.org/10.1063/1.1570942 (3 pages) | Cited 35 times

Online Publication Date: 29 April 2003

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Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial variations in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3-based capacitors on Pt electrodes. Mapping of polarization distribution in the poled capacitors as well as local d33–V loop measurements revealed a significant difference in imprint and switching behavior between the peripheral and inner parts of the capacitors. It has been found that the inner regions of the capacitors are negatively imprinted (with the preferential direction of the normal component of polarization upward) and tend to switch back after application of the positive poling voltage. On the other hand, switchable regions at the edge of the integrated capacitors generally exhibit more symmetric hysteresis behavior. Application of an ac switching voltage, contrary to what was expected, resulted in an increase of the negatively imprinted regions. The observed effect has been explained by incomplete or asymmetric switching due to the mechanical stress conditions existing in the central parts of the capacitors. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena

Full-relativistic calculations of the SrTiO3 carrier effective masses and complex dielectric function

M. Marques, L. K. Teles, V. Anjos, L. M. R. Scolfaro, J. R. Leite, V. N. Freire, G. A. Farias, and E. F. da Silva

Appl. Phys. Lett. 82, 3074 (2003); http://dx.doi.org/10.1063/1.1570922 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2003

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We perform fully relativistic band-structure calculations for cubic SrTiO3, which are used to obtain carrier effective masses and the frequency behavior of its complex dielectric function ϵ(ω). The obtained values and anisotropy of the carrier effective masses are shown to be highly influenced by the relativistic contributions. In order to evaluate the static dielectric constant, the low-frequency behavior of ϵ(ω) is obtained by taking into account also the optical phonon contributions to the imaginary part of ϵ(ω), adopting a simplified classical oscillator dispersion model. It is found that the phonon contribution leads to about 240 times (at T = 85 K) the value of the bare electronic contribution to the dielectric constant. The calculated temperature dependence of the dielectric constant is shown to be consistent with that observed in bulk SrTiO3 static permittivity measurements. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
71.20.Ps Other inorganic compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
77.22.Ch Permittivity (dielectric function)
71.15.Rf Relativistic effects
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Transport properties of LaTiO3+x films and heterostructures

A. Schmehl, F. Lichtenberg, H. Bielefeldt, J. Mannhart, and D. G. Schlom

Appl. Phys. Lett. 82, 3077 (2003); http://dx.doi.org/10.1063/1.1572960 (3 pages) | Cited 26 times

Online Publication Date: 29 April 2003

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We report on the transport properties of LaTiO3+ε and LaTiO3.5 films. The LaTiO3+ε samples show metallic transport and several samples exhibit a hysteretic drop of resistance during cooldown at ∼ 240 K. The ferroelectric LaTiO3.5 samples, grown in capacitor structures, have nonlinear, diode-like and hysteretic V(I) characteristics. Two charge-controlled transport regimes are found, which can be utilized for switching the devices between two voltage states. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
73.61.Le Other inorganic semiconductors
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