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5 May 2003

Volume 82, Issue 18, pp. 2939-3130

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Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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Influences of central metal ions on the electroluminescene and transport properties of tris-(8-hydroxyquinoline) metal chelates

B. J. Chen, X. W. Sun, and Y. K. Li

Appl. Phys. Lett. 82, 3017 (2003); http://dx.doi.org/10.1063/1.1572474 (3 pages) | Cited 10 times

Online Publication Date: 29 April 2003

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A series of tris-(8-hydroxyquinoline) metal chelates with central metal ions of Al3+, Ga3+, and In3+ was synthesized, characterized, and used in organic electroluminescent devices. The ionization potential and optical band gap of the three chelates were measured by ultraviolet photoelectron spectroscopy and ultraviolet-visible spectrum, respectively. Two types of devices, with configurations of indium tin oxide (ITO)/N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (80 nm)/Mq3 (80 nm)/Mg:Ag (200 nm) and ITO/TPD (60 nm)/TPD:rubrene (3%) (20 nm)/Mq3 (80 nm)/Mg:Ag (200 nm) (M = Al, Ga, or In), were fabricated and characterized based on these metal chelates. In the first type of configuration, the metal chelates were used as both the emitter and the electron-transporting layer. In the second type of configuration, the metal chelates were believed to only act as electron-transporting layer. As the central ion changed, both the luminescence and the carrier transport properties of the metal chelates were changed. By comparing the performance of the two types of devices, we found that as the size of the metal ion increased, the luminance efficiency decreased and the electron mobility increased. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
72.80.Le Polymers; organic compounds (including organic semiconductors)

Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

D. Chiba, K. Takamura, F. Matsukura, and H. Ohno

Appl. Phys. Lett. 82, 3020 (2003); http://dx.doi.org/10.1063/1.1571666 (3 pages) | Cited 132 times

Online Publication Date: 29 April 2003

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The effect of low-temperature annealing on (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures is studied. Low-temperature annealing significantly increases the ferromagnetic transition temperature TC of top (Ga,Mn)As layers, reaching as high as 160 K, whereas no apparent effect is observed on bottom (Ga,Mn)As layers. The annealing effect on Be-doped trilayers is also presented. © 2003 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
61.72.Cc Kinetics of defect formation and annealing

Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells

J. Deng, J. M. Pearce, R. J. Koval, V. Vlahos, R. W. Collins, and C. R. Wronski

Appl. Phys. Lett. 82, 3023 (2003); http://dx.doi.org/10.1063/1.1571985 (3 pages) | Cited 13 times

Online Publication Date: 29 April 2003

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Forward bias current–voltage characteristics (JD–V) were studied for both p–i–n (superstrate) and n–i–p (substrate) (a-SiC:H p)/(a-Si:H i) solar-cell structures having different p/i interface layers and different thickness i-layers. Contributions of the p/i interfaces to the JD–V characteristics were separated, and the dependence on the thickness of the i-layers was established. Equivalence was observed in a comparison of the characteristics of p–i–n and n–i–p cells. The various JD–V characteristics are found to be consistent with uniform densities of defects in the i-layers, and thus inconsistent with the spatially varying large densities of defects predicted for solar-cell structures by the defect pool model. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors

Highly stable and textured hydrogenated ZnO thin films

Seung Yeop Myong and Koeng Su Lim

Appl. Phys. Lett. 82, 3026 (2003); http://dx.doi.org/10.1063/1.1571651 (3 pages) | Cited 37 times

Online Publication Date: 29 April 2003

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We investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (11math0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Dv Thermal stability; thermal effects
84.60.Jt Photoelectric conversion
73.61.Ga II-VI semiconductors
81.05.Dz II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Hydrogen density-of-states in polycrystalline silicon

N. H. Nickel and K. Brendel

Appl. Phys. Lett. 82, 3029 (2003); http://dx.doi.org/10.1063/1.1570924 (3 pages) | Cited 7 times

Online Publication Date: 29 April 2003

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The influence of laser crystallization on hydrogen bonding in polycrystalline silicon is investigated employing hydrogen effusion measurements. Fully crystallized poly-Si samples contain a residual H concentration of up to 1.5×1022 cm−3. From the effusion spectra, the H density-of-states distribution is derived. Interestingly, hydrogen bonding is affected by the deposition temperature of the amorphous starting material. Below the H transport states, four peaks are observed in the H density of states at ≈ −2.15, −2.4, −2.7, and −3.25 eV. © 2003 American Institute of Physics.
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71.55.Cn Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing

Nanometer-scale switches using copper sulfide

T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, and M. Aono

Appl. Phys. Lett. 82, 3032 (2003); http://dx.doi.org/10.1063/1.1572964 (3 pages) | Cited 168 times

Online Publication Date: 29 April 2003

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We describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance. The switch consists of a copper sulfide film, which is a chalcogenide semiconductor, sandwiched between copper and metal electrodes. Applying a positive or negative voltage to the metal electrode can repeatedly switch its conductance in under 100 μs. Each state can persist without a power supply for months, demonstrating the feasibility of nonvolatile memory with its nanometer scale. While biasing voltages, copper ions can migrate in copper sulfide film and can play an important role in switching. © 2003 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
85.30.-z Semiconductor devices

Electric-field-induced heating and energy relaxation in GaN

T. A. Eckhause, Ö. Süzer, Ç. Kurdak, F. Yun, and H. Morkoç

Appl. Phys. Lett. 82, 3035 (2003); http://dx.doi.org/10.1063/1.1571982 (3 pages) | Cited 9 times

Online Publication Date: 29 April 2003

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Electric-field-induced heating is studied using noise measurements in n-type GaN grown on sapphire substrates. The measured electron temperature is found to be an order of magnitude higher than what is expected based on calculations of electron–phonon coupling via acoustic deformation potential scattering processes in GaN. The discrepancy may be explained by a large thermal boundary resistance between the GaN film and the sapphire substrate. © 2003 American Institute of Physics.
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72.70.+m Noise processes and phenomena
73.61.Ey III-V semiconductors
71.38.-k Polarons and electron-phonon interactions

Influence of in situ applied stress during thermal oxidation of (111)Si on Pb interface defects

A. Stesmans, D. Pierreux, R. J. Jaccodine, M.-T. Lin, and T. J. Delph

Appl. Phys. Lett. 82, 3038 (2003); http://dx.doi.org/10.1063/1.1555277 (3 pages) | Cited 17 times

Online Publication Date: 29 April 2003

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The results of a series of experiments are reported in which constant, controlled levels of in-plane stress were applied in situ to oxidizing (111) silicon substrates. Electron spin resonance measurements show that the properties of inherently incorporated electrically active Pb defects at the (111)Si/SiO2 interface are affected; among others, tensile stresses decrease the number of Pbs, while compressive stresses have the opposite effect. The results are in agreement with the generally accepted relationship between Pb-defect generation and interfacial mismatch (stress). © 2003 American Institute of Physics.
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81.65.Mq Oxidation
68.35.Ct Interface structure and roughness
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
76.30.Mi Color centers and other defects

Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

M. L. Nakarmi, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 82, 3041 (2003); http://dx.doi.org/10.1063/1.1559444 (3 pages) | Cited 21 times

Online Publication Date: 29 April 2003

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Mg-δ-doping in GaN and AlGaN epilayers has been investigated by metalorganic chemical vapor deposition. It was demonstrated through electrical, optical, and structural studies that Mg-δ-doping improves not only p-type conduction, but also the overall quality of p-type GaN and AlGaN epilayers. A twofold (fivefold) enhancement in lateral (vertical) p-type conduction have been achieved for GaN and AlGaN epilayers. It is argued that the observed dislocation density reduction (of about one order of magnitude) is due to the growth interruption in the Mg-δ-doping duration that partially terminates the dislocation propagation in the growth direction. Furthermore, Mg-δ-doping also reduces Mg impurity self-compensation and enhances hole concentrations in Mg-δ-doped GaN or AlGaN. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
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