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5 May 2003

Volume 82, Issue 18, pp. 2939-3130

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Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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Narrow-band polarized light emission from organic microcavity fabricated by sol-gel technique

Qinghai Song, Liying Liu, Tao Ling, Lei Xu, and Wencheng Wang

Appl. Phys. Lett. 82, 2939 (2003); http://dx.doi.org/10.1063/1.1571955 (3 pages) | Cited 4 times

Online Publication Date: 29 April 2003

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We report the fabrication and optical properties of an organic light-emitting microcavity. The cavity is a laser dye-doped polycarbonate film sandwiched between two Bragg reflectors, fabricated by alternately depositing TiO2 and SiO2 sol-gel thin films. Reflectivity up to 98% was achieved using the Bragg reflectors. The cavity has a photonic band gap between 597 and 789 nm with a defect state inside the gap. Narrow-band optical pumped light emission from the cavity and its polarization dependence were observed. A cavity quality factor as high as 354 was achieved. Angular and polarization dependence of light emission were analyzed using the transfer matrix method. All experimental results agree well with theoretical calculations. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Tunable distributed feedback laser with photonic crystal mirrors

S. Mahnkopf, M. Kamp, A. Forchel, and R. März

Appl. Phys. Lett. 82, 2942 (2003); http://dx.doi.org/10.1063/1.1571662 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2003

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We report the development of a tunable laser diode based on InP using photonic crystal mirrors. The laser consists of two longitudinally coupled ridge waveguide segments that are coupled through a photonic crystal mirror segment. A laterally defined binary superimposed grating provides a distributed feedback in each of the cavities. Quasi-continuous tuning is achieved in a 24.5 nm window with 56 channels as typically required by wavelength division multiplexing applications. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Tv Photonic crystal lasers and coherent effects
42.60.Fc Modulation, tuning, and mode locking
42.79.Bh Lenses, prisms and mirrors
42.70.Qs Photonic bandgap materials

Normal-mode anisotropic liquid-crystal gels

Yun-Hsing Fan, Hongwen Ren, and Shin-Tson Wu

Appl. Phys. Lett. 82, 2945 (2003); http://dx.doi.org/10.1063/1.1571663 (3 pages) | Cited 20 times

Online Publication Date: 29 April 2003

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A normal-mode anisotropic liquid-crystal (LC) gel is demonstrated. In the absence of an electric field, the light polarized along the rubbing direction is scattered. In the voltage-on state, the gel is highly transparent and is independent of polarization. Such a normal mode LC gel exhibits a modest contrast ratio, response time, and low operating voltage. It can be used as a broadband switchable polarizer, variable optical attenuator, and reflective display. © 2003 American Institute of Physics.
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42.70.Df Liquid crystals
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
61.30.Vx Polymer liquid crystals
82.70.Gg Gels and sols
61.25.H- Macromolecular and polymers solutions; polymer melts
78.20.Jq Electro-optical effects

Time evolution of depletion region in poled silica

A. L. C. Triques, I. C. S. Carvalho, M. F. Moreira, H. R. Carvalho, R. Fischer, B. Lesche, and W. Margulis

Appl. Phys. Lett. 82, 2948 (2003); http://dx.doi.org/10.1063/1.1572472 (3 pages) | Cited 14 times

Online Publication Date: 29 April 2003

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The electric field recorded in silica samples thermally poled during various intervals was measured by etching. The field is nearly uniform and increases to a maximum ( ∼ 3.6×108 V/m) in few minutes of poling and subsequently decreases slowly toward a steady level ( ∼ 1.4×108 V/m). The depletion layer becomes neutral even before the field reaches steady state. An upper limit of (0.7±0.2) μm was found for the thickness of the negatively charged edge of the depletion region. The value of χ(3) is the same for all poling times. © 2003 American Institute of Physics.
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77.22.Ej Polarization and depolarization
42.70.Ce Glasses, quartz
81.65.Cf Surface cleaning, etching, patterning
42.65.An Optical susceptibility, hyperpolarizability

Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate

José M. Zanardi Ocampo, Pablo O. Vaccaro, Shanmugam Saravanan, Kazuyoshi Kubota, and Tahito Aida

Appl. Phys. Lett. 82, 2951 (2003); http://dx.doi.org/10.1063/1.1570925 (3 pages) | Cited 1 time

Online Publication Date: 29 April 2003

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Edge-emitting InGaAs/GaAs laser diodes were grown on patterned GaAs (311)A-oriented substrates. Due to the amphoteric properties of Si as a dopant in high-index GaAs, a device with a lateral p–n junction was obtained. CW lasing was observed up to 200 K. The dependence of the threshold current with temperature was measured. The characteristic temperatures were T0 = 180 and T0 = 57 K for experimental temperatures below and above 100 K, respectively, meaning that the carrier confinement structure must be improved. Quantitative results of the cavity gain were experimentally obtained. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Third-order nonlinearities in silicon at telecom wavelengths

M. Dinu, F. Quochi, and H. Garcia

Appl. Phys. Lett. 82, 2954 (2003); http://dx.doi.org/10.1063/1.1571665 (3 pages) | Cited 140 times

Online Publication Date: 29 April 2003

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The two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 μm using femtosecond pulses and a balanced Z-scan technique. A phase shift sensitivity of the order of 1 mrad is achieved, enabling the accurate measurement of third-order nonlinear coefficients at fluences smaller than 100 μJ/cm2. From the two-photon absorption coefficient (β∼0.8 cm/GW) and the Kerr coefficient (n2 ∼ 4×10−14 cm2/W) at a wavelength λ = 1.54 μm, a value F ∼ 0.35 for the nonlinear figure of merit for all-optical switching is determined. © 2003 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.-k Nonlinear optics

Demonstration of a nanophotonic switching operation by optical near-field energy transfer

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu

Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages) | Cited 63 times

Online Publication Date: 29 April 2003

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We have demonstrated the operation of a nanophotonic switch that uses three CuCl quantum cubes with a size ratio of 1:√2:2. The switching mechanism is based on resonant optical near-field energy transfer between the resonant quantized excitonic energy levels of the quantum cubes. Using near-field optical spectroscopy, we observed a switching rise time of less than 100 ps and a repetition rate of 80 MHz. These results suggest the possibility of making a nanophotonic switching device smaller than 20 nm with a figure of merit 10–100 times higher than that of a conventional photonic switch. © 2003 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects

Room-temperature electro-optic up-conversion via internal photoemission

K. J. Russell, Ian Appelbaum, H. Temkin, C. H. Perry, V. Narayanamurti, M. P. Hanson, and A. C. Gossard

Appl. Phys. Lett. 82, 2960 (2003); http://dx.doi.org/10.1063/1.1571981 (3 pages) | Cited 26 times

Online Publication Date: 29 April 2003

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We describe the fabrication and operation of a device which performs linear optical up-conversion at room temperature. The mechanism for up-conversion is based on internal photoemission from a Schottky contact. We then describe the voltage dependence of this device and interpret it in terms of total energy conservation. Although an AlGaAs/GaAs system is employed here, the functionality is not material-specific and therefore should be widely applicable to different materials systems, such as GaN/InGaN. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Jb Light-emitting devices

Single spatial mode selection in a layered square microcavity laser

Hee-Jong Moon, Kyungwon An, and Jai-Hyung Lee

Appl. Phys. Lett. 82, 2963 (2003); http://dx.doi.org/10.1063/1.1572966 (3 pages) | Cited 16 times

Online Publication Date: 29 April 2003

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We propose a scheme for mode selection in a square-shaped two-dimensional layered microcavity laser. By using a fused-silica square-shaped capillary containing a dye-doped liquid as a layered microcavity, whose refractive index was smaller than that of the fused silica, we could realize our idea for single spatial-mode lasing. By analyzing the amount of peak shift induced by varying the refractive index of inner liquid, we could confirm that the lasing modes originate by the free-running trajectories that are constrained on the outer layer by the presence of the inner boundary in such a way that only the ray having a refraction angle of 45° in the inner gain layer could be selected. © 2003 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Mv Dye lasers
42.60.Fc Modulation, tuning, and mode locking

Dry-etching method for fabricating photonic-crystal waveguides in nonlinear-optical polymers

Shin-ichiro Inoue, Kotaro Kajikawa, and Yoshinobu Aoyagi

Appl. Phys. Lett. 82, 2966 (2003); http://dx.doi.org/10.1063/1.1572962 (3 pages) | Cited 10 times

Online Publication Date: 29 April 2003

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Nonlinear optical (NLO) polymer is proposed as one of the best candidates for nonlinear photonic crystal (PC) waveguides. A dry etching technique for this material is established at the suboptical wavelength scale needed to fabricate NLO polymer PC waveguides, with the good processability achieved in this material demonstrated by the successful fabrication of a PC waveguide in NLO polymer. Sharp resonances originating from coupling to photonic band modes are observed in the optical reflectance spectra of this waveguide, with resonant frequencies found to depend on the angle and in-plane propagation lattice direction of incident light. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.65.Wi Nonlinear waveguides
42.70.Jk Polymers and organics
42.82.Cr Fabrication techniques; lithography, pattern transfer

Stacking and translation of microscopic particles by means of 2×2 beams emitted from a vertical-cavity surface-emitting laser array

Fumika Sumiyama, Yusuke Ogura, and Jun Tanida

Appl. Phys. Lett. 82, 2969 (2003); http://dx.doi.org/10.1063/1.1570939 (3 pages) | Cited 2 times

Online Publication Date: 29 April 2003

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We report on an optical manipulation method to achieve stacking of multiple particles by simultaneous emission of vertical-cavity surface-emitting laser sources. In the experiment, up to seven polystyrene particles of 10-μm diameter were stacked vertically by illuminating 2×2 beams. Furthermore, we could translate the particles keeping the stacked state without mechanical movement. The maximum number of stackable particles was obtained when the focal spots of the beams were located 20 μm above the sample stage. We also found that the relation between the spot pitch and the particle diameter is an important factor to achieve stacking. This manipulation method is expected to be useful for microfabrication of a three-dimensional structure and collective translation of materials capsuled in microparticles. © 2003 American Institute of Physics.
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81.16.-c Methods of micro- and nanofabrication and processing
42.62.-b Laser applications
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