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5 May 2003

Volume 82, Issue 18, pp. 2939-3130

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Appl. Phys. Lett. 82, 2957 (2003); http://dx.doi.org/10.1063/1.1571977 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, Suguru Sangu, and Motoichi Ohtsu
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Surface structures of a Co-doped anatase TiO2 (001) film investigated by scanning tunneling microscopy

J. S. Yang, D. H. Kim, S. D. Bu, T. W. Noh, S. H. Phark, Z. G. Khim, I. W. Lyo, and S.-J. Oh

Appl. Phys. Lett. 82, 3080 (2003); http://dx.doi.org/10.1063/1.1571983 (3 pages) | Cited 5 times

Online Publication Date: 29 April 2003

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The surface structure of an anatase Ti0.94Co0.06O2 (001) film, grown epitaxially on a Nb-doped SrTiO3 (001) substrate, was investigated using in situ scanning tunneling microscopy. For the as-grown film, a (1×n) (n = 3, 4, 5, and 6) reconstructed surface was observed that shows (n−2) faint rows between adjacent bright rows. After annealing at 650 °C, nanoparticles appeared, mostly on the step edges. From the I–V curves measured by scanning tunneling spectroscopy, the tunneling gap of Co:TiO2 was estimated to be about 3.0 eV, consistent with the band gap (Eg = 3.2 eV) of pure anatase TiO2. However, on nanoparticles, the I–V curve showed a much smaller gap, suggesting that the particle must be different from TiO2. © 2003 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.72.Cc Kinetics of defect formation and annealing
61.46.-w Structure of nanoscale materials

Quantum dot amplifiers with high output power and low noise

Tommy W. Berg and Jesper Mørk

Appl. Phys. Lett. 82, 3083 (2003); http://dx.doi.org/10.1063/1.1571226 (3 pages) | Cited 33 times

Online Publication Date: 29 April 2003

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Quantum dot semiconductor optical amplifiers have been theoretically investigated and are predicted to achieve high saturated output power, large gain, and low noise figure. We discuss the device dynamics and, in particular, show that the presence of highly inverted barrier states does not limit the performance of these devices. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Measuring electrical current during scanning probe oxidation

F. Pérez-Murano, C. Martín, N. Barniol, H. Kuramochi, H. Yokoyama, and J. A. Dagata

Appl. Phys. Lett. 82, 3086 (2003); http://dx.doi.org/10.1063/1.1572480 (3 pages) | Cited 23 times

Online Publication Date: 29 April 2003

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Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip–surface distance is known unequivocally during current acquisition. Current measurements at finite tip–sample distance, in particular, unveil how the geometry of the meniscus influences its electrical conduction properties as well as the role of space charge at very small tip–sample distances. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Palladium nanoparticle arrays using template-assisted electrodeposition

D. Bera, S. C. Kuiry, S. Patil, and S. Seal

Appl. Phys. Lett. 82, 3089 (2003); http://dx.doi.org/10.1063/1.1572465 (3 pages) | Cited 11 times

Online Publication Date: 29 April 2003

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Palladium nanoparticles are being increasingly considered as room-temperature hydrogen sensors and storage materials. Pd nanoparticle arrays have been synthesized using template-assisted electrodeposition. The template based on Al film on a polymeric substrate was characterized by scanning electron microscopy and energy dispersive spectroscopy. X-ray photoelectron spectroscopy study confirmed that the deposited nanoparticles were of metallic Pd. High-resolution transmission electron microscopy investigation revealed that Pd nanoparticles consisted of a large number of nanocrystallites in the size range of 5–10 nm. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
82.45.Yz Nanostructured materials in electrochemistry
81.15.Pq Electrodeposition, electroplating
82.45.Qr Electrodeposition and electrodissolution

Characteristics of a field-effect transistor with stacked InAs quantum dots

T. H. Wang, H. W. Li, and J. M. Zhou

Appl. Phys. Lett. 82, 3092 (2003); http://dx.doi.org/10.1063/1.1572468 (3 pages) | Cited 1 time

Online Publication Date: 29 April 2003

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We report on the operation of a heterojunction field-effect transistor with stacked InAs quantum dots below a layer of two-dimensional electron gases. The output characteristics show a rapid increase of the drain current before its saturation. The transconductance exhibits a few peaks when scanning the gate voltage. These behaviors can be well explained by additional transport through the stacked InAs quantum dots. Our results indicate that the transistor could be controlled by an operation of one single electron in quantum dots. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.35.Gv Single electron devices

Optimized surface-enhanced Raman scattering on gold nanoparticle arrays

N. Félidj, J. Aubard, G. Lévi, J. R. Krenn, A. Hohenau, G. Schider, A. Leitner, and F. R. Aussenegg

Appl. Phys. Lett. 82, 3095 (2003); http://dx.doi.org/10.1063/1.1571979 (3 pages) | Cited 139 times

Online Publication Date: 29 April 2003

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In this letter, we show that tuning the maximum of the surface plasmon resonance of elongated gold nanoparticles to a wavelength, the position of which is precisely midway between the exciting laser line and the Raman line, results in an optimization of the surface-enhanced Raman-scattering effect. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Er Solid metals and alloys
73.22.Lp Collective excitations
78.68.+m Optical properties of surfaces

Temperature dependence of resonant Raman scattering in double-wall carbon nanotubes

Lijie Ci, Zhenping Zhou, Li Song, Xiaoqin Yan, Dongfang Liu, Huajun Yuan, Yan Gao, Jianxiong Wang, Lifeng Liu, Weiya Zhou, Gang Wang, and Sishen Xie

Appl. Phys. Lett. 82, 3098 (2003); http://dx.doi.org/10.1063/1.1572959 (3 pages) | Cited 27 times

Online Publication Date: 29 April 2003

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The temperature-dependent frequency shift of resonant Raman spectra of double-wall carbon nanotubes is investigated in the range of 78–650 K. We show here that different radial breathing mode (RBM) peaks, which are relative to different tube diameters, have a different temperature coefficient of frequency shift, and the larger diameter carbon nanotubes have more RBM frequency downshift with increasing temperature. We attribute the RBM frequency variation to the temperature dependence of the stretching force constant of C–C bond. © 2003 American Institute of Physics.
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78.67.Ch Nanotubes
78.30.Hv Other nonmetallic inorganics
61.46.-w Structure of nanoscale materials
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
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