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12 May 2003

Volume 82, Issue 19, pp. 3147-3362

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3266 (2003); http://dx.doi.org/10.1063/1.1572970 (3 pages)

Michael Mück, Christian Welzel, and John Clarke
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Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh, Eric M. Vogel, and Joseph B. Bernstein

Appl. Phys. Lett. 82, 3242 (2003); http://dx.doi.org/10.1063/1.1572466 (3 pages) | Cited 5 times

Online Publication Date: 6 May 2003

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The impact of hot holes on gate oxide breakdown is studied by investigating devices under constant voltage stress with a different amount of preinjected substrate hot holes. The results show that oxide breakdown is independent of the amount of those preinjected hot holes, which suggests that defects generated by hot holes are not directly related to oxide breakdown during constant voltage stress conditions. © 2003 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
73.61.Ng Insulators
73.50.Fq High-field and nonlinear effects

Charge carrier mobility in doped semiconducting polymers

V. I. Arkhipov, P. Heremans, E. V. Emelianova, G. J. Adriaenssens, and H. Bässler

Appl. Phys. Lett. 82, 3245 (2003); http://dx.doi.org/10.1063/1.1572965 (3 pages) | Cited 46 times

Online Publication Date: 6 May 2003

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An analytic model of the equilibrium hopping conductivity in a disordered organic semiconductor at large charge carrier densities is formulated. Calculated dependences of the equilibrium hopping mobility upon the carrier density are compared with recent experimental data obtained on doped poly(3-hexylthiophene) films. Doping is shown to create additional energy disorder due to potential fluctuations caused by the Coulomb field of randomly distributed dopant ions. © 2003 American Institute of Physics.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds
71.55.Jv Disordered structures; amorphous and glassy solids

Pi-stacked pentacene thin films grown on Au(111)

Joo H. Kang and X.-Y. Zhu

Appl. Phys. Lett. 82, 3248 (2003); http://dx.doi.org/10.1063/1.1572554 (3 pages) | Cited 47 times

Online Publication Date: 6 May 2003

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Scanning tunneling microscopy with high impedance has been used to image the growth of pentacene thin films on Au(111). Instead of the herringbone structure in bulk solid, pentacene molecules in these thin films form a cofacial, π-stacked crystalline phase with their molecular planes parallel to the surface. The growth of this crystalline phase is attributed to the formation of a close-packed, crystalline monolayer which seeds the growth of the π-stacked multilayer film. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors

F. Gámiz, J. B. Roldán, J. E. Carceller, and P. Cartujo

Appl. Phys. Lett. 82, 3251 (2003); http://dx.doi.org/10.1063/1.1572967 (3 pages) | Cited 14 times

Online Publication Date: 6 May 2003

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An improved theory for remote-charge-scattering-limited mobility in silicon inversion layers is developed. The model takes into account the effects of image charges, screening, inversion layer quantization, the contribution of different subbands, oxide thickness, the actual distribution of charged centers inside the structure, the actual distribution of carriers in the inversion layer, the correlation of charged centers, and the charged centers sign. The model is implemented in a Monte Carlo simulator, where the effects of the ionized impurities charge, the interface trapped charge, and the contribution of other scattering mechanisms are taken into account simultaneously. Our results show that remote Coulomb scattering cannot be neglected for oxide thicknesses below 2 nm, but that its effects for tox>5 nm are negligible. Good agreement with experimental results has been obtained. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

K. A. Rickert, A. B. Ellis, F. J. Himpsel, H. Lu, W. Schaff, J. M. Redwing, F. Dwikusuma, and T. F. Kuech

Appl. Phys. Lett. 82, 3254 (2003); http://dx.doi.org/10.1063/1.1573351 (3 pages) | Cited 32 times

Online Publication Date: 6 May 2003

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The effects of surface chemical treatments and metal deposition on the InN surface are studied via synchrotron-based photoemission spectroscopy. Changes in the In 4d core level as well as the valence band spectra are reported. The surface Fermi level position, EF, relative to the valence band maximum was determined for both Au and Ti Schottky barriers. EF lies at an energy of 0.7 eV above the valence band maximum for Au deposited on annealed InN and 1.2 eV above the valence band maximum for Ti deposited on Ar-sputtered InN. These results that the surface Fermi level lays at or above the conduction band maximum when a value of InN band gap of 0.7–0.9 eV is assumed. © 2003 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states
81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
68.47.Fg Semiconductor surfaces
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Ns Metal-nonmetal contacts
61.72.Cc Kinetics of defect formation and annealing

Light intensity imaging of single InAs quantum dots using scanning tunneling microscope

T. Tsuruoka, Y. Ohizumi, and S. Ushioda

Appl. Phys. Lett. 82, 3257 (2003); http://dx.doi.org/10.1063/1.1576509 (3 pages) | Cited 5 times

Online Publication Date: 6 May 2003

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Light intensity images of self-assembled p-type InAs quantum dots (QDs) embedded in Al0.6Ga0.4As were measured by injecting electrons from the tip of a scanning tunneling microscope at room temperature. Bright round features appeared in the images for different photon energies. The light emission spectrum measured over each bright feature showed a single emission peak with different peak energy. By comparing the emission peak energies with the transition energies calculated for pyramidal shaped QD structures, we found that the observed bright features correspond to individual InAs QDs. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Optically induced formation of the hydrogen complex responsible for the 4B0 luminescence in 4H-SiC

Yaroslav Koshka

Appl. Phys. Lett. 82, 3260 (2003); http://dx.doi.org/10.1063/1.1574846 (3 pages) | Cited 6 times

Online Publication Date: 6 May 2003

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Formation of a boron-related defect responsible for the 4B0 emission line in the low-temperature photoluminescence spectrum of 4H SiC has been investigated. The 4B0 luminescence was absent in as-grown epitaxial layers. This line appeared after hydrogenation along with other hydrogen-related lines and disappeared after high-temperature annealing. This is an indication of involvement of hydrogen in formation of the corresponding radiative recombination center. Prolonged excitation of the hydrogenated epitaxial layers with above-band gap light caused not only previously reported enhanced passivation of Al acceptors but also additional strong nonmetastable increase of the 4B0 luminescence due to recombination-enhanced formation of the corresponding defect complex. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
61.72.Cc Kinetics of defect formation and annealing

Thermal stability of WSix and W Schottky contacts on n-GaN

Jihyun Kim, F. Ren, A. G. Baca, and S. J. Pearton

Appl. Phys. Lett. 82, 3263 (2003); http://dx.doi.org/10.1063/1.1576506 (3 pages) | Cited 14 times

Online Publication Date: 6 May 2003

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WSix Schottky contacts on GaN are found to exhibit improved thermal stability compared to pure W contacts. While the W contacts degrade for anneal temperatures ≥ 500 °C through reaction with the GaN to form β-W2N, the WSix contacts show a stable Schottky barrier height of ∼ 0.5 eV as obtained from I–V measurements up to temperatures >600 °C. The reverse leakage current in both types of diodes is considerably higher than predicted from thermionic emission and image-force-induced barrier height lowering. The reverse current density was found to vary approximately as VB0.5 (VB is the reverse bias) and suggests the presence of additional current transport mechanism in both types of diodes. © 2003 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing
73.40.Ns Metal-nonmetal contacts
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