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19 May 2003

Volume 82, Issue 20, pp. 3379-3570

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3266 (2003); http://dx.doi.org/10.1063/1.1572970 (3 pages)

Michael Mück, Christian Welzel, and John Clarke
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Surface modes for near field thermophotovoltaics

Arvind Narayanaswamy and Gang Chen

Appl. Phys. Lett. 82, 3544 (2003); http://dx.doi.org/10.1063/1.1575936 (3 pages) | Cited 62 times

Online Publication Date: 12 May 2003

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Thermal radiative energy transfer between closely spaced surfaces has been analyzed in the past and shown not to obey the laws of classical radiation heat transfer owing to evanescent waves and, more recently, electromagnetic surface modes. We have analyzed the energy transfer between layered media, one of the layers being the thermal source, using a Green’s functions method and the fluctuation-dissipation theorem. Based on the analysis, we propose a structure that can utilize the surface modes to increase the power density and efficiency of low temperature thermophotovoltaic generators. © 2003 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
44.40.+a Thermal radiation
41.20.Jb Electromagnetic wave propagation; radiowave propagation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
68.35.Ja Surface and interface dynamics and vibrations
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

F. A. Baron, Y. Zhang, and K. L. Wang

Appl. Phys. Lett. 82, 3547 (2003); http://dx.doi.org/10.1063/1.1576295 (3 pages) | Cited 2 times

Online Publication Date: 12 May 2003

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Gate-induced drain leakage current in accumulated metal-oxide-semiconductor field-effect transistors is pumped out completely by the body, while the source current should be zero due to the barrier of the p/n junction between the source and the accumulated channel. In this work, we report the observation of the current peaks in the source current versus gate voltage characteristics of p-channel transistors when the devices are biased at the accumulation regime. The source current vanishes when the temperature exceeds 11 K. The source current can be enhanced dramatically as the transistors are exposed to a high magnetic field perpendicular to the channel. We believe the Fermi-edge singularity may be responsible for the resonant source current peaks. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

A completely flexible organic transistor obtained by a one-mask photolithographic process

Annalisa Bonfiglio, Fulvia Mameli, and Ornella Sanna

Appl. Phys. Lett. 82, 3550 (2003); http://dx.doi.org/10.1063/1.1577216 (3 pages) | Cited 28 times

Online Publication Date: 12 May 2003

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A one-mask optolithographic process is proposed for obtaining a completely flexible organic thin-film transistor structure. The proposed device consists in a “bottom structure” assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage consists in avoiding the presence of a substrate as the insulator itself is able to support the whole structure. Furthermore, being optically transparent, the insulator is suitable to be employed for the photolithographic realization of the contacts with a one-mask process with no need of mask alignment between source–drain contacts and gate. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer

An accumulative x-ray streak camera with sub-600-fs temporal resolution and 50-fs timing jitter

Jinyuan Liu, Jin Wang, Bing Shan, Chun Wang, and Zenghu Chang

Appl. Phys. Lett. 82, 3553 (2003); http://dx.doi.org/10.1063/1.1577213 (3 pages) | Cited 10 times

Online Publication Date: 12 May 2003

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We demonstrated that the shot-to-shot timing jitter of an x-ray streak camera was reduced to close to 50 fs when it was triggered by a standard kilohertz laser with 1.2% rms pulse energy fluctuation. This was achieved by improving the response time of deflection plates and the rise time of the ramp pulse generated by a photoconductive switch, and by operating the photoconductive switch at optimum conditions. Furthermore, after reducing the angular distribution of electron bunch, the temporal resolution of the x-ray streak camera operating in accumulation mode was measured to be better than 600 fs. © 2003 American Institute of Physics.
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07.85.-m X- and γ-ray instruments
06.60.Jn High-speed techniques (microsecond to femtosecond)
07.68.+m Photography, photographic instruments; xerography
85.60.-q Optoelectronic devices

Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching

J. Spradlin, S. Dogan, M. Mikkelson, D. Huang, L. He, D. Johnstone, H. Morkoç, and R. J. Molnar

Appl. Phys. Lett. 82, 3556 (2003); http://dx.doi.org/10.1063/1.1572532 (3 pages) | Cited 15 times

Online Publication Date: 12 May 2003

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KOH etch was investigated as a means to improve the I–V characteristics of Schottky diodes on n-type GaN grown by molecular-beam epitaxy on sapphire, or on hydride vapor phase epitaxy templates. Atomic force microscopy images and I–V characteristics are presented. After etching as-grown films in molten KOH, Schottky diodes on c-plane GaN had orders of magnitude reduction in reverse leakage current. The best devices had leakage currents less than 10−12 A (10−8 A/cm2) at −5 V, and ideality factors of 1.04. Measurements on several different sample structures indicate a correlation between surface roughness and saturation current, and an improvement in ideality factor when etched in KOH. Phosphoric acid was also investigated, but did not result in significant improvements in I–V characteristics. © 2003 American Institute of Physics.
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73.40.Ei Rectification
85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
81.05.Ea III-V semiconductors
68.47.Fg Semiconductor surfaces
73.61.Ey III-V semiconductors
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
81.65.Cf Surface cleaning, etching, patterning
73.40.Ns Metal-nonmetal contacts

Band bending independent of surface passivation in ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunctions and Cr/Cu(In,Ga)(S,Se)2 Schottky contacts

C. Deibel, V. Dyakonov, and J. Parisi

Appl. Phys. Lett. 82, 3559 (2003); http://dx.doi.org/10.1063/1.1576500 (3 pages) | Cited 6 times

Online Publication Date: 12 May 2003

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We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunctions and Cr/Cu(In,Ga)(S,Se)2 Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)2-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)2 layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.Rv Passivation
73.40.Ns Metal-nonmetal contacts
71.55.Ht Other nonmetals
61.72.Cc Kinetics of defect formation and annealing
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