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19 May 2003

Volume 82, Issue 20, pp. 3379-3570

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3266 (2003); http://dx.doi.org/10.1063/1.1572970 (3 pages)

Michael Mück, Christian Welzel, and John Clarke
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Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy

Ching-Chich Leu, Chih-Yuan Chen, Chao-Hsin Chien, Mao-Nan Chang, Fan-Yi Hsu, and Chen-Ti Hu

Appl. Phys. Lett. 82, 3493 (2003); http://dx.doi.org/10.1063/1.1576308 (3 pages) | Cited 22 times

Online Publication Date: 12 May 2003

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Scanning capacitance microscopy was used to image the polarization-induced microstructural patterns of sol-gel derivative SrBi2Ta2O9 (SBT) thin films. A sharp image contrast was induced between the nanosized domains owing to the various polarities, so that the domain structure in the SBT thin film was clearly revealed. As a result, the switched and unswitched regions could be unequivocally identified. This investigation also confirms that the reversal polarization process of a ferroelectric domain is much easier inside a large grain than in a small grain. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.Dj Domain structure; hysteresis

Ferroelectric behavior of orientation-controlled PbBi4Ti4O15 thin films

Wen Xu Xianyu, Wan In Lee, Taegyung Ko, and June Key Lee

Appl. Phys. Lett. 82, 3496 (2003); http://dx.doi.org/10.1063/1.1576307 (3 pages) | Cited 12 times

Online Publication Date: 12 May 2003

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Ferroelectric lead bismuth titanate (PbBi4Ti4O15) thin films, selectively controlled in c-axis and off-c-axis orientation, were fabricated on a Pt layer by a chemical solution deposition method. The off-c-axis oriented PbBi4Ti4O15 films demonstrated much higher remanent polarization (8.7 μC/cm2) than those of c-axis oriented films (3.7 μC/cm2). Regardless of grain orientation, PbBi4Ti4O15 films were not fatigued up to 1010 cycles under 9-V application. It is deduced that the role of Bi2O22+ layer in inducing fatigue-free property for this Bi-layered perovskite structure is the self-regulation of space charge. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization

Dependence of the pyroelectric response on internal stresses in ferroelectric thin films

Z.-G. Ban and S. P. Alpay

Appl. Phys. Lett. 82, 3499 (2003); http://dx.doi.org/10.1063/1.1576503 (3 pages) | Cited 28 times

Online Publication Date: 12 May 2003

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The role of internal stresses on the pyroelectric properties of ferroelectric thin films is analyzed theoretically via a thermodynamic model. The pyroelectric coefficient as a function of the misfit strain is calculated for (001) Ba0.6Sr0.4TiO3 epitaxial thin films. It is shown that this property is highly dependent on the misfit strain. A very large pyroelectric response (0.65 μC/cm2 K) is theoretically predicted at a critical misfit strain (∼−0.05%) corresponding to the ferroelectric to paraelectric phase transformation. The analysis shows that internal tensile stresses are particularly not desirable with significant degradation close to an order of magnitude in the pyroelectric response. © 2003 American Institute of Physics.
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77.70.+a Pyroelectric and electrocaloric effects
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

High-dielectric-constant all-polymer percolative composites

Cheng Huang, Q. M. Zhang, and Ji Su

Appl. Phys. Lett. 82, 3502 (2003); http://dx.doi.org/10.1063/1.1575505 (3 pages) | Cited 74 times

Online Publication Date: 12 May 2003

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We report here an all-polymer high-dielectric (dielectric constant K>1000 at 1 kHz) percolative composite material, fabricated by a combination of conductive polyaniline particles (K>105) within a poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) terpolymer matrix (K>50). These high-K polymer hybrid materials also exhibit high electromechanical responses. For example, 1.5% strain, which is proportional to the square of the field applied, can be induced by a field of 9.5 MV/m, an eightfold reduction in field applied compared with that in a fluoroterpolymer matrix. © 2003 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)
81.05.Qk Reinforced polymers and polymer-based composites
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
72.80.Le Polymers; organic compounds (including organic semiconductors)
77.65.-j Piezoelectricity and electromechanical effects

Kelvin probe force microscopy study of SrBi2Ta2O9 and PbZr0.53Ti0.47O3 thin films for high-density nonvolatile storage devices

J. Y. Son, S. H. Bang, and J. H. Cho

Appl. Phys. Lett. 82, 3505 (2003); http://dx.doi.org/10.1063/1.1576916 (3 pages) | Cited 17 times

Online Publication Date: 12 May 2003

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Polycrystalline ferroelectric thin films of SrBi2Ta2O9 (SBT) and PbZr0.53Ti0.47O3 (PZT) were deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition using an eclipse method and the surface potentials were observed by Kelvin probe force microscopy. The data suggest that the surface charge trap is a dominant effect over the ferroelectric polarization when a high electric field is applied on a cantilever during writing. This results from the increase of surface trapped charge and the saturation of ferroelectric remanent polarization. The data also indicate that the SBT thin films can easily trap surface charges than that of the PZT thin films. By properly biasing low voltage, the magnitude and the sign of surface potential are determined by the ferroelectric polarization than by the trapped surface charges. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.50.Gk Non-volatile ferroelectric memories
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization

Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O

J. F. Conley, Y. Ono, R. Solanki, G. Stecker, and W. Zhuang

Appl. Phys. Lett. 82, 3508 (2003); http://dx.doi.org/10.1063/1.1575934 (3 pages) | Cited 23 times

Online Publication Date: 12 May 2003

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We report on the electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 precursor for metal/oxide/semiconductor gate dielectric applications. Thin films, with less than 1% variation in accumulation capacitance over a 150 mm wafer, have been deposited directly on hydrogen-terminated Si wafers. The effective dielectric constant of thin (<10 nm) films was in the range of κeff = 10–12, the breakdown voltage was about 6–9 MV/cm, and the leakage current was between 3–6 orders of magnitude lower than that of SiO2. The relative benefit of lower leakage current of HfO2 over SiO2 decreased with decreasing effective thickness. Electron trapping was observed under constant voltage stressing. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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