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19 May 2003

Volume 82, Issue 20, pp. 3379-3570

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Appl. Phys. Lett. 82, 3266 (2003); http://dx.doi.org/10.1063/1.1572970 (3 pages)

Michael Mück, Christian Welzel, and John Clarke
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Fluorine-enhanced boron diffusion in amorphous silicon

J. M. Jacques, L. S. Robertson, K. S. Jones, M. E. Law, Mike Rendon, and Joe Bennett

Appl. Phys. Lett. 82, 3469 (2003); http://dx.doi.org/10.1063/1.1576508 (3 pages) | Cited 28 times

Online Publication Date: 12 May 2003

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Silicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015 atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015 atoms/cm2 and 2×1015 atoms/cm2, respectively. After annealing at 550 °C, secondary ion mass spectroscopy determined that the diffusivity of boron in amorphous silicon is significantly enhanced in the presence of fluorine. Ellipsometry and cross-sectional transmission electron microscopy indicate the enhanced diffusion only occurs in the amorphous layer. Fluorine increases the boron diffusivity by approximately five orders of magnitude at 550 °C. It is proposed that the ability of fluorine to reduce the dangling bond concentration in amorphous silicon may reduce the formation energy for mobile boron, enhancing its diffusivity. © 2003 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.37.Lp Transmission electron microscopy (TEM)

Atomic-layer doping in Si by alternately supplied NH3 and SiH4

Youngcheon Jeong, Masao Sakuraba, and Junichi Murota

Appl. Phys. Lett. 82, 3472 (2003); http://dx.doi.org/10.1063/1.1576910 (3 pages) | Cited 4 times

Online Publication Date: 12 May 2003

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Low-temperature Si growth on the atomic-layer order nitrided Si(100) surface with N amount of 1–6×1014 cm−2 formed by NH3 reaction at 400 °C were investigated using an ultraclean low-pressure chemical vapor deposition system. The epitaxial growth of Si film on the nitrided Si(100) with the initial N amount as high as about 3×1014 cm−2 is realized at 500 °C, although the film becomes amorphous in the case at the initial surface N amount of 6×1014 cm−2. By the analysis of the x-ray photoelectron spectroscopy, it is observed that the surface structure of the atomic-layer order nitrided Si(100) is changed into Si3N4 structure by the increase of the surface N amount. It is suggested that the crystallinity of Si film deposited on the atomic-layer order nitrided Si(100) is degraded by the existence of Si3N4 structure. Depth profile of N atomic-layer doped Si film clearly shows that most of the N atoms are confined within about 1-nm-thick region. © 2003 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
79.60.Dp Adsorbed layers and thin films
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