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19 May 2003

Volume 82, Issue 20, pp. 3379-3570

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3266 (2003); http://dx.doi.org/10.1063/1.1572970 (3 pages)

Michael Mück, Christian Welzel, and John Clarke
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Bleached state transmittance in charge-unbalanced all-solid-state electrochromic devices

Kwang-Soon Ahn, Yoon-Chae Nah, Jin-Young Park, Yung-Eun Sung, Ki-Yun Cho, Seung-Shik Shin, and Jung-Ki Park

Appl. Phys. Lett. 82, 3379 (2003); http://dx.doi.org/10.1063/1.1575927 (3 pages) | Cited 16 times

Online Publication Date: 12 May 2003

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The bleached state transmittance of a charge-unbalanced, complementary electrochromic (EC) device may show residual coloration due to the presence of residual charges. In this study, EC devices were fabricated with configurations G/ITO/Ni(OH)2/Ta2O5/H+–SPE/Ta2O5/WO3/ITO/G and G/ITO/NiOOH/Ta2O5/H+–SPE/Ta2O5/HWO3/ITO/G (G = glass, H+–SPE = proton-conducting solid polymer electrolytes, and ITO = indium tin oxide). These devices, referred to as EC1 and EC2, were initially fabricated from fully bleached EC layers and from fully colored EC layers, respectively. The change in electrochromic properties as a function of charge capacity ratio (R) for each device was then compared. In comparison to EC2 devices, EC1 devices provided better bleached-state transmittances and higher coloration efficiencies over a wider range of R, and were less sensitive to changes in R value. This may arise because the absorbance caused by the residual charges in the colored state is greater and more sensitive to the charge capacity ratio than that in the bleached state. © 2003 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.79.-e Optical elements, devices, and systems

Simulation evidence for lateral excitation transfer in a self-assembled quantum-dot array

H. T. Johnson, R. Bose, H. D. Robinson, and B. B. Goldberg

Appl. Phys. Lett. 82, 3382 (2003); http://dx.doi.org/10.1063/1.1575509 (3 pages) | Cited 4 times

Online Publication Date: 12 May 2003

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Simulations of InAlAs/AlGaAs self-assembled quantum-dot arrays containing as many as 30 individual dots are used to identify a mechanism for lateral excitation transfer through partially delocalized heavy-hole states. Individual hole states exhibit wave-function splitting between several dots in the array, as well as partial confinement in the wetting layer, and have strong overlap with multiple conduction-band electron states in different quantum dots. Electron–hole pair energies involving these partially delocalized hole states correspond well with narrow resonances seen in the experimental photoluminescence excitation spectra taken for similar quantum-dot arrays using low-temperature near-field scanning optical microscopy. © 2003 American Institute of Physics.
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73.21.La Quantum dots
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

Fine-tuning photorefractive properties of monolithic molecular materials

Zhanjia Hou, Wei You, and Luping Yu

Appl. Phys. Lett. 82, 3385 (2003); http://dx.doi.org/10.1063/1.1575938 (3 pages) | Cited 5 times

Online Publication Date: 12 May 2003

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Single component photorefractive materials based on small molecules have been synthesized. The sidechains located in the electron-withdrawing group of these molecules were systematically changed in order to investigate their influence. It was demonstrated that the photorefractive performance of these materials could be fine-tuned by changing the length of the sidechain. Excellent optical quality and photorefractive properties were obtained. A large net optical gain of 280 cm−1 at a low external field (38.3 V/μm) and a diffraction efficiency of 82% were observed at 780 nm. The results indicate that an optimum sidechain length exists for this type of molecules. © 2003 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Efficient frequency doubling of a femtosecond pulse with simultaneous group-velocity matching and quasi phase matching in periodically poled, MgO-doped lithium niobate

Nan Ei Yu, Sunao Kurimura, Kenji Kitamura, Jung Hoon Ro, Myoungsik Cha, Satoshi Ashihara, Tsutomu Shimura, Kazuo Kuroda, and Takunori Taira

Appl. Phys. Lett. 82, 3388 (2003); http://dx.doi.org/10.1063/1.1576296 (3 pages) | Cited 15 times

Online Publication Date: 12 May 2003

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We demonstrate efficient frequency doubling of 95-fs pulses with a small temporal broadening in a 10-mm-long, periodically poled, 5-mol % MgO-doped lithium niobate crystal. Simultaneous group-velocity matching and quasi phase matching were achieved by the off-diagonal nonlinear optical coefficient d32 at telecommunications range. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

A hybrid laser system consisting of a frequency-doubled, narrow-line-width, distributed-feedback dye laser oscillator and a high saturation-fluence Ce:LiCaAlF6 crystal amplifier

D. Q. Hoa, N. D. Hung, J. Moroe, N. Takeyasu, and T. Imasaka

Appl. Phys. Lett. 82, 3391 (2003); http://dx.doi.org/10.1063/1.1576294 (3 pages) | Cited 2 times

Online Publication Date: 12 May 2003

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A tunable narrow-band picosecond dye laser emitting in the ultraviolet region was amplified using a Ce:LiCaAlF6 crystal pumped by the fourth-harmonic emission of a Nd:Y3Al5O12 laser. The single-pass gain obtained exceeded 2 in the spectral range of 288 to 297 nm. © 2003 American Institute of Physics.
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42.55.Mv Dye lasers
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Ultrafast photoinduced anisotropy and optical switching in azobenzene sidechain polymers

Hui Wang, Yaping Huang, Zhigang Liu, Fuli Zhao, Weizhu Lin, Jian Wang, and Zhaoxi Liang

Appl. Phys. Lett. 82, 3394 (2003); http://dx.doi.org/10.1063/1.1576504 (3 pages) | Cited 11 times

Online Publication Date: 12 May 2003

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Photoinduced anisotropic and optical switching properties have been studied in two kinds of azobenzene sidechain polymers, a disazobenzene sidechain polymer (DAP–PGMA) and a monoazobenzene sidechain polymer P(MMA–co–MAZ). Picosecond optical switching dynamics have been observed in both DAP–PGMA and P(MMA–co–MAZ) films. The rise time of the optical switching in DAP–PGMA film is about 40 ps, which is much faster than that of P(MMA–co–MAZ) film (∼100 ps). DAP–PGMA shows enhanced photoanisotropy and larger birefringence ( ∼ 7.04×10−4) than that of P(MMA–co–MAZ) ( ∼ 1.34×10−4). The influence of the azobenzene sidechain groups on the photoanisotropic dynamics is discussed. © 2003 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.47.-p Spectroscopy of solid state dynamics
78.20.Fm Birefringence

Very high average power at room temperature from λ ≈ 5.9-μm quantum-cascade lasers

J. S. Yu, S. Slivken, A. Evans, J. David, and M. Razeghi

Appl. Phys. Lett. 82, 3397 (2003); http://dx.doi.org/10.1063/1.1574404 (3 pages) | Cited 23 times

Online Publication Date: 12 May 2003

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We report a very high average output power at room temperature for quantum-cascade lasers emitting at λ ≈ 5.9 μm. For high-reflectivity-coated 2-mm-long cavities, a low threshold current density of 1.7 kA/cm2 was obtained at room temperature. From 300 to 400 K, the characteristic temperature (T0) was 198 K. A maximum average output power of 0.67 W was achieved. In addition, 0.56 W average output power was observed at a duty cycle of 56%. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission

R. J. Potter, N. Balkan, H. Carrère, A. Arnoult, E. Bedel, and X. Marie

Appl. Phys. Lett. 82, 3400 (2003); http://dx.doi.org/10.1063/1.1576511 (3 pages) | Cited 8 times

Online Publication Date: 12 May 2003

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The effects of nitrogen fraction on the temperature dependence of GaNxAs1−x/GaAs (x<2.8%) quantum-well emission was investigated using steady-state photoluminescence between 2 and 300 K. At low temperatures, a characteristic S-shape behavior indicative of carrier localization was observed for each of the samples. This is believed to result from the large miscibility gap induced by the nitrogen, which results in structural/compositional fluctuations in the well. In the high temperature regime (T>150 K) where the emission has a linear dependence, a strong reduction in emission temperature dependence was observed with increasing nitrogen. The temperature dependence was modeled using the band anticrossing approach, with the interaction matrix element parameter CNM (VMN = −CMNmath) and the nitrogen level parameter γ (EN = EN0−γx) used as fitting parameters. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
68.65.Fg Quantum wells

Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution

Ching-Fuh Lin, Yi-Shin Su, Di-Ku Yu, Chao-Hsin Wu, and Bing-Ruey Wu

Appl. Phys. Lett. 82, 3403 (2003); http://dx.doi.org/10.1063/1.1577384 (3 pages) | Cited 5 times

Online Publication Date: 12 May 2003

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Laser diodes with nonidentical multiple quantum wells could have the lasing wavelength very insensitive to temperature variation. For temperature varying from 33 to 260 K, the lasing energy changes less than 5 meV, while the band gap energy changes more than 50 meV. The origin is due to the strongly temperature-dependent Fermi–Dirac distribution, which favors carriers in high-energy states at large temperature. The temperature-induced carrier redistribution could even cause negative characteristic temperature for a certain temperature range because the low-energy quantum wells behave like reservoirs to overcome the detrimental influence of temperature. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.Fg Quantum wells
73.20.At Surface states, band structure, electron density of states

Analysis of thermal stress in wafer bonding of dissimilar materials for the introduction of an InP-based light emitter into a GaAs-based three-dimensional photonic crystal

Shinpei Ogawa, Masahiro Imada, and Susumu Noda

Appl. Phys. Lett. 82, 3406 (2003); http://dx.doi.org/10.1063/1.1576911 (3 pages) | Cited 8 times

Online Publication Date: 12 May 2003

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Thermal stresses generated by differences in the thermal expansion coefficients of InP and GaAs are analyzed in an attempt to introduce an InP-based light emitter into GaAs-based three-dimensional photonic crystal. Observations of the GaAs/InGaAsP bonding interface by scanning acoustic microscopy reveal that debonding occurs at approximately 300 °C due to thermal stress. Calculations of thermal stress by a two-dimensional finite element method suggested that thermal stress could be reduced by thinning the substrate, which was confirmed experimentally. Using these results, a three-dimensional photonic crystal with light emitter was successfully fabricated. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
02.70.Dh Finite-element and Galerkin methods
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser

D. A. Carder, L. R. Wilson, R. P. Green, J. W. Cockburn, M. Hopkinson, M. J. Steer, R. Airey, and G. Hill

Appl. Phys. Lett. 82, 3409 (2003); http://dx.doi.org/10.1063/1.1576908 (3 pages) | Cited 14 times

Online Publication Date: 12 May 2003

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We report the shortest-wavelength (λ∼8.5 μm) room-temperature laser operation so far achieved for GaAs-based quantum-cascade (QC) lasers. By depositing InAs monolayers in the device active regions during growth, we are able to both reduce the emission wavelength and minimize thermally activated carrier leakage into quasicontinuum states. This approach results in laser operation up to 305 K, with a peak optical power of ∼10 mW at room temperature. A reduced temperature sensitivity of the threshold current compared with similar GaAs–Al0.45Ga0.55As QC lasers is also observed. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
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