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19 May 2003

Volume 82, Issue 20, pp. 3379-3570

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3266 (2003); http://dx.doi.org/10.1063/1.1572970 (3 pages)

Michael Mück, Christian Welzel, and John Clarke
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Reversible and bistable terahertz radiation from magnetoresistive Pr0.7Ca0.3MnO3 thin films

Noriaki Kida and Masayoshi Tonouchi

Appl. Phys. Lett. 82, 3412 (2003); http://dx.doi.org/10.1063/1.1575507 (3 pages) | Cited 4 times

Online Publication Date: 12 May 2003

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Reversible and bistable terahertz (THz) radiation by sweeping the temperature has been observed in a dipole-type photoswitching device fabricated on magnetoresistive charge-ordered manganite Pr0.7Ca0.3MnO3 thin film. Based on simultaneous measurements of the photocurrent, we show that this THz functionality of Pr0.7Ca0.3MnO3 arises from the instability of metallic patches embedded with a charge-ordered insulating phase, which is created by the illumination of visible light under an electric field at constant temperature, and that it can also be controlled by a subsequent change of temperature. © 2003 American Institute of Physics.
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75.47.Lx Magnetic oxides
73.50.Mx High-frequency effects; plasma effects
73.50.Pz Photoconduction and photovoltaic effects
72.60.+g Mixed conductivity and conductivity transitions
71.30.+h Metal-insulator transitions and other electronic transitions
75.47.Gk Colossal magnetoresistance
75.70.Ak Magnetic properties of monolayers and thin films
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
78.70.Gq Microwave and radio-frequency interactions
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots

A. M. Adawi, E. A. Zibik, L. R. Wilson, A. Lemaître, J. W. Cockburn, M. S. Skolnick, M. Hopkinson, G. Hill, S. L. Liew, and A. G. Cullis

Appl. Phys. Lett. 82, 3415 (2003); http://dx.doi.org/10.1063/1.1575931 (3 pages) | Cited 16 times

Online Publication Date: 12 May 2003

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We present a midinfrared absorption study of an n–i–n structure containing two planes of strongly coupled In0.5Ga0.5As self-assembled quantum dots. We find that the dominant absorption occurs for light polarized in the growth plane (E//xy), contrasting with uncoupled dots which exhibit stronger absorption for light polarized in the growth direction (E//z) in the same energy range. Results from the coupled dot sample indicate that the confinement length in the growth direction is increased, lowering the energy of the s-like ground state and hybridizing px,y-like excited states and wetting layer states. A significantly increased normal incidence photocurrent signal is measured for the sample containing coupled dots, relative to samples containing up to 30 layers of uncoupled dots, confirming the enhancement of the normal incidence absorption. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.30.Fs III-V and II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Midinfrared intersubband absorption in strain-compensated InGaP/InGaAs superlattices on (001) GaAs

M. P. Semtsiv, G. G. Tarasov, W. T. Masselink, H. Kissel, and M. Woerner

Appl. Phys. Lett. 82, 3418 (2003); http://dx.doi.org/10.1063/1.1573368 (3 pages) | Cited 1 time

Online Publication Date: 12 May 2003

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Intersubband optical transitions in strain-compensated In0.32Ga0.68As–In0.32Ga0.68P superlattices grown using gas-source molecular-beam epitaxy on (001)GaAs are investigated by means of midinfrared absorption and low-temperature photoluminescence. Strong absorption corresponding to the transition from the first to second electronic subband is measured at wavelengths between 5.6 and 10.5 μm. The data indicate that the conduction band offset between the strained In0.32Ga0.68As and the strained In0.32Ga0.68P is 370 meV and the electron effective mass in the strained In0.32Ga0.68As well is 0.060m0. This material system is an interesting GaAs-based candidate for applications in midinfrared intersubband emitters and detectors. © 2003 American Institute of Physics.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.21.Cd Superlattices
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

A method to extract quantitative information in analyzer-based x-ray phase contrast imaging

E. Pagot, P. Cloetens, S. Fiedler, A. Bravin, P. Coan, J. Baruchel, J. Härtwig, and W. Thomlinson

Appl. Phys. Lett. 82, 3421 (2003); http://dx.doi.org/10.1063/1.1575508 (3 pages) | Cited 54 times

Online Publication Date: 12 May 2003

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Analyzer-based imaging is a powerful phase-sensitive technique that generates improved contrast compared to standard absorption radiography. Combining numerically two images taken on either side at ±1/2 of the full width at half-maximum (FWHM) of the rocking curve provides images of “pure refraction” and of “apparent absorption.” In this study, a similar approach is made by combining symmetrical images with respect to the peak of the analyzer rocking curve but at general positions, ±α⋅FWHM. These two approaches do not consider the ultrasmall angle scattering produced by the object independently, which can lead to inconsistent results. An accurate way to separately retrieve the quantitative information intrinsic to the object is proposed. It is based on a statistical analysis of the local rocking curve, and allows one to overcome the problems encountered using the previous approaches. © 2003 American Institute of Physics.
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07.85.-m X- and γ-ray instruments
78.70.Ck X-ray scattering
61.05.cf X-ray scattering (including small-angle scattering)

Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors

W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, T. Venkatesan, R. D. Vispute, and H. Shen

Appl. Phys. Lett. 82, 3424 (2003); http://dx.doi.org/10.1063/1.1576309 (3 pages) | Cited 65 times

Online Publication Date: 12 May 2003

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We report on the epitaxial growth of wide-band-gap cubic-phase MgxZn1−xO thin films on Si(100) by pulsed-laser deposition and fabrication of oxide-semiconductor-based ultraviolet photodetectors. The challenges of large lattice and thermal expansion mismatch between Si and MgxZn1−xO have been overcome by using a thin SrTiO3 buffer layer. The heteroepitaxy of cubic-phase MgxZn1−xO on Si was established with epitaxial relationship of MgxZn1−xO(100)//SrTiO3(100)//Si(100) and MgxZn1−xO[100]//SrTiO3[100]//Si[110]. The minimum yield of the Rutherford backscattering ion channeling in MgxZn1−xO layer was only 4%, indicating good crystalline quality of the film. Smooth surface morphology with rms roughness of 0.6 nm was observed using atomic force microscopy. Photodetectors fabricated on Mg0.68Zn0.32O/SrTiO3/Si show peak photoresponse at 225 nm, which is in the deep UV region. © 2003 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
81.05.Dz II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.60.Dv Thermal stability; thermal effects

Impact of stress on oxygen vacancy ordering in epitaxial (La0.5Sr0.5)CoO3−∂ thin films

Dmitri O. Klenov, Wolfgang Donner, Brendan Foran, and Susanne Stemmer

Appl. Phys. Lett. 82, 3427 (2003); http://dx.doi.org/10.1063/1.1575503 (3 pages) | Cited 17 times

Online Publication Date: 12 May 2003

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We investigate oxygen vacancy ordering in epitaxial (La0.5Sr0.5)CoO3−∂ thin films grown by sputter deposition on (001) LaAlO3 and (001) SrTiO3. After annealing at 500 °C under oxygen partial pressures greater than those used during deposition, films transform to a long-range oxygen vacancy ordered structure with orthorhombic symmetry. Observed orientation variants of the oxygen vacancy ordered structures are different for the two substrates. We discuss the relationship between film stress due to lattice and thermal mismatch with the substrate, and vacancy ordering. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
68.60.Bs Mechanical and acoustical properties
61.72.Cc Kinetics of defect formation and annealing
81.15.Cd Deposition by sputtering

In situ photoemission characterization of terminating-layer-controlled La0.6Sr0.4MnO3 thin films

H. Kumigashira, K. Horiba, H. Ohguchi, K. Ono, M. Oshima, N. Nakagawa, M. Lippmaa, M. Kawasaki, and H. Koinuma

Appl. Phys. Lett. 82, 3430 (2003); http://dx.doi.org/10.1063/1.1575932 (3 pages) | Cited 29 times

Online Publication Date: 12 May 2003

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We report on the fabrication of terminating-layer-controlled La0.6Sr0.4MnO3 (LSMO) thin films and in situ characterization of the films using photoemission spectroscopy. The terminating layer of the LSMO films was changed from B to A site by inserting one atomic layer of SrO between the LSMO film and a TiO2-terminated SrTiO3(001) substrate. The successful control of the terminating layer was confirmed by measuring the angular dependence of core-level spectra. Detailed analysis of the Sr 3d core levels revealed considerable differences in chemical bonding states of Sr atoms in the surface regions of films with different terminating layers. © 2003 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.20.At Surface states, band structure, electron density of states

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han

Appl. Phys. Lett. 82, 3433 (2003); http://dx.doi.org/10.1063/1.1569414 (3 pages) | Cited 49 times

Online Publication Date: 12 May 2003

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Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 1019 to below 1016 cm−3, as the distance from the interface region increases from 1 to 300 μm. These concentrations are the same as the total acceptor densities determined in Hall experiments. The depth profile of O is similar to that of VGa, suggesting that the Ga vacancies are complexed with the oxygen impurities. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.70.Bj Positron annihilation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect
81.05.Ea III-V semiconductors

Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration

Jeong Sook Ha, Chang Hyun Bae, Sang Hwan Nam, Seung Min Park, Young Rae Jang, Keon Ho Yoo, and Kyoungwan Park

Appl. Phys. Lett. 82, 3436 (2003); http://dx.doi.org/10.1063/1.1573335 (3 pages) | Cited 13 times

Online Publication Date: 12 May 2003

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We have fabricated Er-doped amorphous SiOx films by laser ablation of a Si:Er2O3 target in He atmosphere. The photoluminescence intensity at 1.54 μm was highly dependent on the oxygen content in the film, which turned out to be changed significantly by the ambient He pressure. Also, we have adopted time-of-flight quadrupole mass spectroscopy to obtain kinetic energies of ionic species in a plume produced by laser ablation. Si and Er ions do not overlap spatially as they expand toward the Si substrate and Er ions impinge on the preformed SiOx layer. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Nk Insulators
81.15.Fg Pulsed laser ablation deposition
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Rt Time of flight mass spectrometry

Nonlithographic epitaxial SnxGe1−x dense nanowire arrays grown on Ge(001)

Regina Ragan, Channing C. Ahn, and Harry A. Atwater

Appl. Phys. Lett. 82, 3439 (2003); http://dx.doi.org/10.1063/1.1563834 (3 pages) | Cited 8 times

Online Publication Date: 12 May 2003

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We have grown 1-μm-thick SnxGe1−x/Ge(001) epitaxial films with 0<x<0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1−x nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated SnxGe1−x alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition. © 2003 American Institute of Physics.
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68.65.La Quantum wires (patterned in quantum wells)
61.46.-w Structure of nanoscale materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.30.Hv Other nonmetallic inorganics

Effect of Al2O3 capping layer on suppression of interfacial SiO2 growth in HfO2/ultrathin SiO2/Si(001) structure

Manisha Kundu, Noriyuki Miyata, Toshihide Nabatame, Tsuyoshi Horikawa, Masakazu Ichikawa, and Akira Toriumi

Appl. Phys. Lett. 82, 3442 (2003); http://dx.doi.org/10.1063/1.1576293 (3 pages) | Cited 17 times

Online Publication Date: 12 May 2003

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We investigated the effect a 1.2-nm-thick Al2O3 capping layer had on suppressing interfacial Si oxidation in a 2.6-nm-HfO2/0.35-nm-SiO2/Si(001) structure during postdeposition annealing in an oxygen ambient. An incubation period (IP) was initially observed during which the HfO2/Si interface exhibited remarkable stability without any interfacial SiO2 growth. This was then followed by very slow interface oxidation. Our detailed study suggested that low oxidant diffusion through the capping layer determined the effective IP. Furthermore, HfO2/Si interface oxidation, which proceeded through a two-step process that was similar to an uncapped structure, was severely constrained by the limited availability of oxygen at the Al2O3/HfO2 interface. © 2003 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing

Erbium–thulium interaction in broadband infrared luminescent silicon-rich silicon oxide

Se-Young Seo, Jung H. Shin, Byeong-Soo Bae, Namkyoo Park, J. J. Penninkhof, and A. Polman

Appl. Phys. Lett. 82, 3445 (2003); http://dx.doi.org/10.1063/1.1577217 (3 pages) | Cited 16 times

Online Publication Date: 12 May 2003

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The Er–Tm interaction and its effect on the luminescence from Er–Tm codoped silicon-rich silicon oxide (SRSO) is investigated. Er and Tm ions were implanted into SRSO films, which consist of Si nanocrystals embedded in a SiO2 matrix. A broad luminescence spectrum extending from 1.5 to 2.0 μm was observed under excitation with a single light source due to the simultaneous, nonresonant excitation of both Er3+ and Tm3+ via Si nanocrystals. The absolute Er3+ luminescence intensity, however, is reduced relative to the case without Tm codoping. Comparison of the Er3+ and Tm3+ luminescence intensities, lifetimes, and their pump power dependence suggest that Er–Tm interaction leading to an energy transfer from the Er3+:4I13/2 state to the excited Tm3+:3H4 state is responsible for the reduction in the Er luminescence intensity. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals

Optical properties of the isoelectronic trap Hg in ZnO

Th. Agne, M. Dietrich, J. Hamann, S. Lany, H. Wolf, and Th. Wichert

Appl. Phys. Lett. 82, 3448 (2003); http://dx.doi.org/10.1063/1.1576912 (3 pages) | Cited 4 times

Online Publication Date: 12 May 2003

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Nominally undoped ZnO crystals were doped with Hg by implanting radioactive 197Hg/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is observed at 3.276 51 eV, is assigned to a bound exciton. At lower energies, a phonon sideband is visible, which is caused by the strong coupling with acoustical and optical phonons. It is shown that these PL signals are caused by an exciton bound to a Hg atom that resides on a cation site. © 2003 American Institute of Physics.
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71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
63.20.kk Phonon interactions with other quasiparticles

Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.-M. Chauveau, A. Trampert, K. H. Ploog, M.-A. Pinault, and E. Tournié

Appl. Phys. Lett. 82, 3451 (2003); http://dx.doi.org/10.1063/1.1577393 (3 pages) | Cited 24 times

Online Publication Date: 12 May 2003

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We investigated the influence of the growth temperature (Tgr) on the microstructure and on the optical properties of GaInNAs quantum wells (QWs). By comparing the structural information (transmission electron microscopy) with the optical properties (photoluminescence spectroscopy), we demonstrate that high photoluminescence efficiency of GaInNAs QWs is achieved only when the two-dimensional growth mode is preserved, which can be obtained at a low Tgr even for high In content. We also show composition modulations in the GaInNAs QWs, which can lead to the interface roughness. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors

Continuous formation and faceting of SiGe islands on Si(100)

P. Sutter, P. Zahl, and E. Sutter

Appl. Phys. Lett. 82, 3454 (2003); http://dx.doi.org/10.1063/1.1577386 (3 pages) | Cited 27 times

Online Publication Date: 12 May 2003

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The multiscale mechanisms leading to the formation of faceted quantum dot (QD) islands during Si1−xGex/Si(100) heteroepitaxy were studied by scanning tunneling microscopy. The entire evolution from an initial morphological instability of the strained alloy to final {105} faceted pyramidal QD islands is continuous. Shallow mounds, generated by the alloy instability, are bounded by alternating (100) terraces and single-layer steps. Growth of the mounds in height without lateral expansion drives a continuous increase in mound slope and step density up to a critical angle of about 6°. Kinetic constraints then force the nucleation of small {105} protofacets, which expand and ultimately coalesce to form the {105} facets bounding pyramidal QD islands. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.55.-a Thin film structure and morphology

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, E. R. Weber, S. Hautakangas, and K. Saarinen

Appl. Phys. Lett. 82, 3457 (2003); http://dx.doi.org/10.1063/1.1578169 (3 pages) | Cited 45 times

Online Publication Date: 12 May 2003

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Carbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with >1018 cm−3 carbon show a strong luminescence band centered at ∼2.2 eV (yellow luminescence). The absolute intensity of the 2.2 eV band is compared with the gallium vacancy concentration determined by positron annihilation spectroscopy. The results indicate that a high concentration of gallium vacancies is not necessary for yellow luminescence and that there is in fact a causal relationship between carbon and the 2.2 eV band. Markedly different deep-level ionization energies are found for the high-temperature quenching of the 2.2 eV photoluminescence in carbon-doped and reference samples. We propose that while the model of Neugebauer and Van de Walle [Appl. Phys. Lett. 69, 503 (1996)] applies for GaN of low carbon concentration, a different yellow luminescence mechanism is involved when the interstitial carbon concentration is comparable to or exceeds the gallium vacancy concentration. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.70.Bj Positron annihilation
61.72.J- Point defects and defect clusters

Structural and optical properties of epitaxial BaTiO3 thin films grown on GdScO3(110)

J. Schubert, O. Trithaveesak, A. Petraru, C. L. Jia, R. Uecker, P. Reiche, and D. G. Schlom

Appl. Phys. Lett. 82, 3460 (2003); http://dx.doi.org/10.1063/1.1575935 (3 pages) | Cited 24 times

Online Publication Date: 12 May 2003

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We have prepared 1-μm-thick epitaxial BaTiO3 thin films on GdScO3(110) using pulsed laser deposition. The structural perfection of the films was revealed by a rocking curve width of Δω=0.13° for the 002 BaTiO3 reflection and a Rutherford backscattering spectrometry/channeling minimum yield, χmin, of 0.5% measured for the Ba signal behind the surface peak. High-resolution transmission electron microscopy revealed an epitaxial relationship between BaTiO3 and GdScO3 and a sharp interface between the substrate and the film. The refractive index of the BaTiO3 film was no = 2.329±0.002 and ne = 2.307±0.002 at a wavelength of 632.8 nm and no = 2.248±0.002 and ne = 2.228±0.002 at a wavelength of 1523 nm. The optical losses were less than 2 dB/cm at a wavelength of 632.8 nm. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka

Appl. Phys. Lett. 82, 3463 (2003); http://dx.doi.org/10.1063/1.1578162 (3 pages) | Cited 11 times

Online Publication Date: 12 May 2003

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For highly disordered n-type Al0.19Ga0.33In0.48P grown lattice matched to an undoped GaAs substrate, using far-infrared-magneto-optic generalized ellipsometry, the room-temperature free-charge-carrier parameters effective mass m∗ = 0.12(0.01) m0, concentration N = 6.7(0.2)×1017 cm−3, and mobility μ = 339(15) cm2/(V s) are determined by modeling the observed magneto-optic birefringence originating from the far-infrared free-charge-carrier excitations in the Al0.19Ga0.33In0.48P layer without additional electrical measurements. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Ls Magneto-optical effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.20.Fm Birefringence

Pulsed-laser-deposited ultraviolet-emitting SrS:Te thin films

J. M. Fitz-Gerald, J. Hoekstra, P. D. Rack, and J. D. Fowlkes

Appl. Phys. Lett. 82, 3466 (2003); http://dx.doi.org/10.1063/1.1571660 (3 pages) | Cited 3 times

Online Publication Date: 12 May 2003

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SrS has an indirect band gap of ∼4.32 eV, however, when it is doped with tellurium, ultraviolet emission occurs at 360 nm and 400 nm due to recombination from bound exciton states. In this letter, we discuss the ultraviolet emission of pulsed-laser-deposited thin films of SrS:Te grown at room temperature on Si. The deposited film thickness ranged from 0.1–1.5 μm, with optimized films grown at ∼0.5 μm. Te doping was incorporated by both ion implantation and conventional diffusion of deposited Te films. The characteristics of the ultraviolet emission will be discussed and correlated to the microstructural, chemical, and optical properties of the films. © 2003 American Institute of Physics.
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78.66.Li Other semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
68.55.-a Thin film structure and morphology
42.72.Bj Visible and ultraviolet sources
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