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26 May 2003

Volume 82, Issue 21, pp. 3587-3793

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3716 (2003); http://dx.doi.org/10.1063/1.1577808 (3 pages)

V. Novosad, M. Grimsditch, J. Darrouzet, J. Pearson, S. D. Bader, V. Metlushko, K. Guslienko, Y. Otani, H. Shima, and K. Fukamichi
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Supra-nonlinear photorefractive response of single-walled carbon nanotube- and C60-doped nematic liquid crystal

I. C. Khoo, J. Ding, Y. Zhang, K. Chen, and A. Diaz

Appl. Phys. Lett. 82, 3587 (2003); http://dx.doi.org/10.1063/1.1577215 (3 pages) | Cited 21 times

Online Publication Date: 20 May 2003

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We have observed an extremely large electro-optically induced photorefractive effect in nematic liquid crystal doped with single-walled carbon nanotubes and fullerene C60. The effective refractive index change coefficient can be as large as 7 cm2/W, which is >1000 times larger than previous observations. We describe the basic mechanisms and conditions necessary for occurrence of such nonlinearities. © 2003 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Jq Electro-optical effects
61.30.-v Liquid crystals
42.70.Df Liquid crystals

Optical filtering by leaky guided modes in macroporous silicon

Ivan Avrutsky and Vladimir Kochergin

Appl. Phys. Lett. 82, 3590 (2003); http://dx.doi.org/10.1063/1.1577382 (3 pages) | Cited 4 times

Online Publication Date: 20 May 2003

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We propose an optical filtering mechanism in a porous material based on wavelength-dependent losses for leaky modes in pore waveguides. The spectral transmission characteristics of such filters can be controlled by applying thin-film coatings to the pore walls. Such filters will find application in the deep UV spectral range where traditional approaches to filter design fail due to lack of suitable materials. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings

Electrically color-tunable defect mode lasing in one-dimensional photonic-band-gap system containing liquid crystal

Ryotaro Ozaki, Tatsunosuke Matsui, Masanori Ozaki, and Katsumi Yoshino

Appl. Phys. Lett. 82, 3593 (2003); http://dx.doi.org/10.1063/1.1577829 (3 pages) | Cited 69 times

Online Publication Date: 20 May 2003

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Electrical tuning of the wavelength of the defect-mode lasing in a one-dimensional periodic structure has been demonstrated using a dye-doped nematic liquid crystal as a defect layer in the periodic structure. Lasing wavelength is widely tuned upon applying an electric field, which is due to the refractive index change in the defect layer caused by the field-induced realignment of the liquid crystal molecules. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.70.Hj Laser materials
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.60.Fc Modulation, tuning, and mode locking
78.20.Jq Electro-optical effects

Enhanced single-photon emission from a quantum dot in a micropost microcavity

Jelena Vučković, David Fattal, Charles Santori, Glenn S. Solomon, and Yoshihisa Yamamoto

Appl. Phys. Lett. 82, 3596 (2003); http://dx.doi.org/10.1063/1.1577828 (3 pages) | Cited 76 times

Online Publication Date: 20 May 2003

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We demonstrate a single-photon source based on a quantum dot in a micropost microcavity that exhibits a large Purcell factor together with a small multiphoton probability. For a quantum dot on resonance with the cavity, the spontaneous emission rate is increased by a factor of 5, while the probability to emit two or more photons in the same pulse is reduced to 2% compared to a Poisson-distributed source of the same intensity. In addition to the small multiphoton probability, such a strong Purcell effect is important in a single-photon source for improving the photon outcoupling efficiency and the single-photon generation rate, and for bringing the emitted photon pulses closer to the Fourier transform limit. © 2003 American Institute of Physics.
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42.50.Ar Photon statistics and coherence theory
78.67.Hc Quantum dots
42.82.Gw Other integrated-optical elements and systems
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Fluorene-based polymer gain media for solid-state laser emission across the full visible spectrum

Ruidong Xia, George Heliotis, and Donal D. C. Bradley

Appl. Phys. Lett. 82, 3599 (2003); http://dx.doi.org/10.1063/1.1576906 (3 pages) | Cited 45 times

Online Publication Date: 20 May 2003

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We report a study of the optical gain properties of three polyfluorenes with chemically tuned emission characteristics that span 400–800 nm. We demonstrate low threshold light amplification in the blue, green, and red spectral ranges via amplified spontaneous emission (ASE) in optically pumped planar asymmetric waveguides. Gain and loss measurements at the peak ASE wavelengths show large net gains, 22 ⩽ g ⩽ 66 cm−1, and low losses, 15⩾α⩾3 cm−1. Our findings establish fluorene-based polymers as an attractive family of materials for use in tuneable solid-state lasers that emit at wavelengths across the whole visible spectrum. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

High-performance photorefractive organic glass with near-infrared sensitivity

Oksana Ostroverkhova, W. E. Moerner, Meng He, and Robert J. Twieg

Appl. Phys. Lett. 82, 3602 (2003); http://dx.doi.org/10.1063/1.1577214 (3 pages) | Cited 19 times

Online Publication Date: 20 May 2003

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A high-performance organic glass mixture comprised of two dicyanomethylenedihydrofuran derivatives is presented. A pronounced two-beam coupling effect was observed at a wavelength of 830 nm in an unsensitized composition. Sensitization with (2,4,7-trinitro-9fluorenylidene)malononitrile (TNFM) led to a significant increase in the two-beam coupling gain coefficient, reaching a net value of ∼ 370 cm−1 at an electric field of 45 V/μm at 1% TNFM, and resulted in an improvement in photorefractive speed. © 2003 American Institute of Physics.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Designer infrared filters using stacked metal lattices

Howard A. Smith, M. Rebbert, and O. Sternberg

Appl. Phys. Lett. 82, 3605 (2003); http://dx.doi.org/10.1063/1.1579115 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2003

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We have designed and fabricated infrared filters for use at wavelengths ≳15 microns. Unlike conventional dielectric filters used at the short wavelengths, ours are made from stacked metal grids, spaced at a very small fraction of the performance wavelengths. The individual lattice layers are gold, the spacers are polyimide, and they are assembled using integrated circuit processing techniques; they resemble some metallic photonic band-gap structures. We simulate the filter performance accurately, including the coupling of the propagating, near-field electromagnetic modes, using computer aided design codes. We find no anomalous absorption. The geometrical parameters of the grids are easily altered in practice, allowing for the production of tuned filters with predictable useful transmission characteristics. Although developed for astronomical instrumentation, the filters are broadly applicable in systems across infrared and terahertz bands. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers

Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure

Noriyuki Yokouchi, Aaron J. Danner, and Kent D. Choquette

Appl. Phys. Lett. 82, 3608 (2003); http://dx.doi.org/10.1063/1.1577835 (3 pages) | Cited 22 times

Online Publication Date: 20 May 2003

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A vertical-cavity surface-emitting laser with a two-dimensional photonic crystal (PC) structure has been investigated for single lateral mode operation. The PC confined mode can be controlled by the lattice constant, the hole diameter, the etching depth, and the defect structure. A seven-point defect structure is proposed to enhance the confinement effect, which is diluted by finite hole depth of the PC structure. We obtained a pure PC confined mode under room-temperature cw conditions with a PC lattice constant of 2 μm, hole diameters of 1.0 and 1.4 μm, and depths of 1.85 and 1.92 μm, respectively. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Anticompetition of laser modes

Ching-Fuh Lin, Chi-Chia Huang, Fei-Hung Chu, and Yi-Shin Su

Appl. Phys. Lett. 82, 3611 (2003); http://dx.doi.org/10.1063/1.1578708 (3 pages) | Cited 3 times

Online Publication Date: 20 May 2003

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Anticompetition of laser modes is observed. In this behavior, the increase of intensity in one lasing mode could enhance the intensity of another mode, which is opposite to the usual competition behavior and so-called anticompetition. In our experiments using the semiconductor laser with very broadband gain medium, anticompetition exists when the laser modes have their wavelengths widely separated. Anticompetition can be observed for spectral separation of 138 nm and is even more prominent for spectral separation up to 167 nm. Theoretical analysis shows that anticompetition is due to the physics similar to optical pumping. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory

Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes

X. A. Cao, S. F. LeBoeuf, L. B. Rowland, C. H. Yan, and H. Liu

Appl. Phys. Lett. 82, 3614 (2003); http://dx.doi.org/10.1063/1.1578539 (3 pages) | Cited 47 times

Online Publication Date: 20 May 2003

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Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) has been investigated to illustrate the role of localization effects in carrier capture and recombination. The devices have identical structure but with varying indium content in the active region. A large redshift of the emission peak with decreasing temperature is observed in the UV and blue LEDs over the temperature range of 77–200 K, accompanying a pronounced decrease of EL intensity. This redshift reflects carrier relaxation into lower energy localized states and the change in carrier recombination dynamics at low temperatures. In contrast, the peak energy of the green LEDs exhibits a smaller temperature-induced shift, and the emission intensity increases monotonically with decreasing temperature down to 5 K. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Fg Quantum wells
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Photonic band gap in (Pb,La)(Zr,Ti)O3 inverse opals

Bo Li, Ji Zhou, Lifeng Hao, Wei Hu, Ruilong Zong, Minmin Cai, Min Fu, Zhilun Gui, Longtu Li, and Qi Li

Appl. Phys. Lett. 82, 3617 (2003); http://dx.doi.org/10.1063/1.1578691 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2003

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(Pb,La)(Zr,Ti)O3 (PLZT) inverse opal photonic crystals were synthesized by a process of self-assembly in combination with a sol-gel technique. In this process, PLZT precursors were infiltrated into the interstices of the opal template assembled by monodisperse submicron polystyrene spheres, and then gelled in a humid environment. Polystyrene template was removed by calcining the specimen at a final temperature of 700 °C accompanied with the crystallization of perovskite phase in PLZT inverse opal network. Scanning electron microscope images show that the inverse opals possess a fcc structure with a lattice constant of 250 nm. A wide photonic band gap in the visible range is observed from transmission spectra of the sample. Such PLZT inverse opals as photonic crystals should be of importance in device applications. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Qs Photonic bandgap materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
42.50.-p Quantum optics
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.66.Fn Inorganic compounds

8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth

Appl. Phys. Lett. 82, 3620 (2003); http://dx.doi.org/10.1063/1.1579137 (3 pages) | Cited 17 times

Online Publication Date: 20 May 2003

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We demonstrate more than 8-W continuous-wave output power with good beam quality (M2<1.8) from an optically pumped semiconductor disk laser. The combination of low threshold density of 470 W/cm2 and high differential efficiency of 60% results in an optical-to-optical conversion efficiency of 46% for this high output level. Good epitaxial quality and low thermal resistance allow the scaling of output power with pump spot area. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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High-intensity regime of x-ray generation from relativistic laser plasmas

Georg Pretzler, Felix Brandl, Jürgen Stein, Ernst Fill, and Jaroslav Kuba

Appl. Phys. Lett. 82, 3623 (2003); http://dx.doi.org/10.1063/1.1577832 (3 pages) | Cited 5 times

Online Publication Date: 20 May 2003

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We report experiments exhibiting specific features in generating hard x rays with femtosecond laser plasmas as relativistic intensities are approached. Copper foils are irradiated with 1-J/130-fs Ti:sapphire laser pulses, and the x rays are detected with spatial resolution. The results demonstrate a dramatic reduction in the x-ray-emitting spot size at intensities around 1019 W/cm2, and a corresponding increase in the x-ray flux density. These findings are explained in terms of forward acceleration of electrons due to relativistic effects. © 2003 American Institute of Physics.
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52.59.Px Hard X-ray sources
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.27.Ny Relativistic plasmas
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

Mass spectrometry sampling method for characterizing high-density plasma etching mechanisms

C. R. Eddy, D. Leonhardt, V. A. Shamamian, J. E. Butler, and B. D. Thoms

Appl. Phys. Lett. 82, 3626 (2003); http://dx.doi.org/10.1063/1.1577831 (3 pages) | Cited 1 time

Online Publication Date: 20 May 2003

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Mass spectrometry sampling using a “through-the-platen” technique is described with respect to its utility in characterizing high-density plasma etching processes for semiconductors. A custom substrate platen/sampling aperture is described and its effectiveness in characterizing plasma/surface reactions is demonstrated. The technique is applied to the characterization of GaAs etching in a Cl2/Ar high-density plasma chemistry. © 2003 American Institute of Physics.
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52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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Improved photoluminescence of pulsed-laser-ablated Y2O3:Eu3+ thin-film phosphors by Gd substitution

Jong Seong Bae, Jung Hyun Jeong, Soung-soo Yi, and Jung-Chul Park

Appl. Phys. Lett. 82, 3629 (2003); http://dx.doi.org/10.1063/1.1573360 (3 pages) | Cited 23 times

Online Publication Date: 20 May 2003

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Gd-substituted Y2−xGdxO3:Eu3+ luminescent thin films have been grown on Al2O3 (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The PL brightness data obtained from Y2−xGdxO3:Eu3+ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than on the crystallinity of the films. In particular, the incorporation of Gd into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y1.35Gd0.60Eu0.05O3, thin film whose brightness was increased by a factor of 3.1 in comparison with that of Y2O3:Eu3+ films. This phosphor has promise for application to the flat panel displays. © 2003 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
81.15.Fg Pulsed laser ablation deposition
68.35.Dv Composition, segregation; defects and impurities

Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

A. Passaseo, M. De Vittorio, M. T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J. X. Chen, C. Paranthoen, U. Oesterle, and M. Ilegems

Appl. Phys. Lett. 82, 3632 (2003); http://dx.doi.org/10.1063/1.1578182 (3 pages) | Cited 16 times

Online Publication Date: 20 May 2003

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We have studied the radiative and structural properties of identical InxGa(1−x)As quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent spectroscopy, efficient lasing from the ground state is achieved only in the MBE sample, whereas excited state lasing is obtained in the MOCVD device. Such a difference is ascribed to the existence of the internal dipole field in the MOCVD structure, induced by the strong faceting of the dots, as observed by high-resolution transmission electron microscopy. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.Hc Quantum dots
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.60.Fi Electroluminescence
73.63.Kv Quantum dots
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
79.60.Jv Interfaces; heterostructures; nanostructures

Highly uniform (Cd,Mn,Zn)Se/(Zn,Mn)Se quantum dot array formation by means of thermal treatments

T. Topuria, P. Möck, Y. Lei, and N. D. Browning

Appl. Phys. Lett. 82, 3635 (2003); http://dx.doi.org/10.1063/1.1578163 (3 pages)

Online Publication Date: 20 May 2003

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Thermal treatments of (Cd,Mn,Zn)Se/(Zn,Mn)Se multiquantum well heterostructures inside the electron microscope resulted in the formation of three-dimensional CdSe based quantum dots (QDs). The array uniformity of the QDs was investigated by means of the Z-contrast imaging technique in the scanning transmission electron microscope and found to be superior to that of Stranski–Krastanow grown CdSe based QDs. The outcome of the heating experiment demonstrated that thermal treatments might be considered as one of the ways in obtaining highly ordered QD arrays. Possible mechanisms of the QD formation by means of thermal treatments are also discussed. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
68.37.Lp Transmission electron microscopy (TEM)
75.50.Pp Magnetic semiconductors

Spherical Nb single crystals containerlessly grown by electrostatic levitation

Y. S. Sung, H. Takeya, K. Hirata, and K. Togano

Appl. Phys. Lett. 82, 3638 (2003); http://dx.doi.org/10.1063/1.1578517 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2003

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Spherical Nb (Tm = 2750 K) single crystals were grown via containerless electrostatic levitation (ESL). Samples became spherical at melting in levitation and undercooled typically 300–450 K prior to nucleation. As-processed samples were still spherical without any macroscopic shape change by solidification showing a uniform dendritic surface morphology. Crystallographic {111} planes exposed in equilateral triangular shapes on the surface by preferential macroetching and spotty back-reflection Laue patterns confirm the single crystal nature of the ESL-processed Nb samples. No hysteresis in magnetization between zero field and field cooling also implies a clean defect-free condition of the spherical Nb single crystals. © 2003 American Institute of Physics.
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81.10.Fq Growth from melts; zone melting and refining
81.05.Bx Metals, semimetals, and alloys
68.47.De Metallic surfaces
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.70.D- Solid-liquid transitions
81.30.Fb Solidification
64.60.Q- Nucleation
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photoinduced phase transition of metallic SmS thin films by a femtosecond laser

R. Kitagawa, H. Takebe, and K. Morinaga

Appl. Phys. Lett. 82, 3641 (2003); http://dx.doi.org/10.1063/1.1577824 (3 pages) | Cited 9 times

Online Publication Date: 20 May 2003

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Metallic SmS thin films with 100–2000 nm in thickness were prepared by rf magnetron sputtering. The metallic- to semiconductor-phase transition was induced by a regeneratively amplified mode-locked Ti:sapphire laser. The shifts of the (200) peak due to the phase transition were observed by grazing incidence x-ray diffraction (GIXD) analysis. This phase transition was accompanied by the significant reflectance change of the thin films up to 45% in the near-infrared region. The depth of the phase transition layer from the surface of the film irradiated by a femtosecond laser pulse was estimated ∼200 nm from the depth profile of GIXD. © 2003 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
79.20.Ds Laser-beam impact phenomena
68.55.Nq Composition and phase identification
78.66.-w Optical properties of specific thin films
68.55.-a Thin film structure and morphology
78.40.-q Absorption and reflection spectra: visible and ultraviolet
61.72.S- Impurities in crystals
61.82.-d Radiation effects on specific materials

Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer

H. Y. Liu and M. Hopkinson

Appl. Phys. Lett. 82, 3644 (2003); http://dx.doi.org/10.1063/1.1577827 (3 pages) | Cited 20 times

Online Publication Date: 20 May 2003

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A combined InAlAs and GaAs strained buffer layer was presented to tailor the structural and optical properties of 1.3-μm InAs/GaAs quantum dots. This growth technique exhibits an increment of InAs quantum-dot density from 1.6×1010 to 2.8×1010 cm−2 and an improvement of energy separation between the quantum-dot ground and first-excited states from 84 to 93 meV upon adjusting the thickness of GaAs in InAlAs–GaAs buffer layer. We also investigate the effect of an InAlAs layer surrounding InAs quantum dots on photoluminescence intensity with increasing the thickness of InAlAs layer in a 6-nm InAlAs–InGaAs composite cap layer, and no negative effect has been observed. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
81.07.Ta Quantum dots
73.21.La Quantum dots
78.55.Cr III-V semiconductors
68.37.Ps Atomic force microscopy (AFM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Boron uphill diffusion during ultrashallow junction formation

R. Duffy, V. C. Venezia, A. Heringa, T. W. T. Hüsken, M. J. P. Hopstaken, N. E. B. Cowern, P. B. Griffin, and C. C. Wang

Appl. Phys. Lett. 82, 3647 (2003); http://dx.doi.org/10.1063/1.1578512 (3 pages) | Cited 41 times

Online Publication Date: 20 May 2003

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The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface. © 2003 American Institute of Physics.
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66.30.J- Diffusion of impurities
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.72.S- Impurities in crystals
68.35.Fx Diffusion; interface formation
68.47.Fg Semiconductor surfaces
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing

Transient-enhanced Si diffusion on native-oxide-covered Si(001) nanostructures during vacuum annealing

H. Lichtenberger, M. Mühlberger, and F. Schäffler

Appl. Phys. Lett. 82, 3650 (2003); http://dx.doi.org/10.1063/1.1577391 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2003

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We report on the transient-enhanced shape transformation of nanostructured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 900–950 °C for a few minutes. We find dramatic surface mass transport concomitant with the development of low-energy facets on surfaces that are covered by native oxide. The enhanced surface mass transport ceases after the oxide is completely desorbed, and it is also not observed on surfaces where the native oxide had been removed by HF before annealing. © 2003 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.47.Fg Semiconductor surfaces
61.46.-w Structure of nanoscale materials
61.72.Cc Kinetics of defect formation and annealing
68.35.Rh Phase transitions and critical phenomena
68.43.Mn Adsorption kinetics

Nanostructured silicon formations as a result of ionized N2 gas reactions on silicon with native oxide layers

Min-Cherl Jung, Tae Gyoung Lee, Young Ju Park, Sung Ho Jun, Joosang Lee, Moonsup Han, Jong Seok Jeong, and Jeong Yong Lee

Appl. Phys. Lett. 82, 3653 (2003); http://dx.doi.org/10.1063/1.1579124 (3 pages) | Cited 3 times

Online Publication Date: 20 May 2003

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Nanostructured silicon was formed by means of the ionized N2 gas reaction on SiO2/Si, and the electronic structure, surface morphology, and optical properties were investigated. The physicochemically modified thin layers were resolved to SiNy and SiOxNy through the observation of Si 2p, O 1s, and N 1s core-level spectra in x-ray photoelectron spectroscopy. The formations of SiOxNy and SiO2 nanostructures (3–4 nm in size), performed by the etching process followed by adsorption of ionized nitrogen, were confirmed by atomic force microscopy. The nanocrystalline Si (6 nm in size) distributed within the modified layer (approximately 10 nm thick) was observed after the in situ rapid thermal annealing processes, using high-resolution transmission electron microscopy. Photoluminescence with a wavelength peaking at around 400 nm was emitted from the nanocrystalline Si formed from the SiOxNy/SiO2/Si structures. This work suggests that the nanocrystalline-Si formation and the nanostructured surface modification method, using the controlled ionized gas, were simple and efficient methods requiring low energy and low temperatures. © 2003 American Institute of Physics.
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81.65.-b Surface treatments
68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
78.55.Ap Elemental semiconductors
68.43.Fg Adsorbate structure (binding sites, geometry)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)
79.60.Dp Adsorbed layers and thin films
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.07.Bc Nanocrystalline materials
73.22.-f Electronic structure of nanoscale materials and related systems
61.82.Rx Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Interface structure and chemistry in ZnSe/Ga1−xMnxAs/ZnSe heterostructures

G. D. Lian, E. C. Dickey, S. H. Chun, K. C. Ku, and N. Samarth

Appl. Phys. Lett. 82, 3656 (2003); http://dx.doi.org/10.1063/1.1577825 (3 pages) | Cited 1 time

Online Publication Date: 20 May 2003

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The structure and chemical composition of ZnSe/Ga1−xMnxAs/ZnSe multilayers grown on (100) GaAs substrates are investigated by high-resolution transmission electron microscopy imaging and spectroscopy techniques. While all layers grow epitaxially and the Ga1−xMnxAs layer is free of planar defects, a high density of stacking faults is observed in the ZnSe layer over Ga1−xMnxAs. The composition of the ferromagnetic layer is measured to be Ga0.93Mn0.07As, and the Mn valence was determined to be 2+. Compositional profiles across the interfaces quantified by electron energy-loss spectroscopy show that the ZnSe/Ga1−xMnxAs interfaces are wider than the ZnSe/GaAs–substrate interface, which is mainly attributed to interfacial roughness. © 2003 American Institute of Physics.
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68.65.Ac Multilayers
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
79.20.Uv Electron energy loss spectroscopy
61.72.Nn Stacking faults and other planar or extended defects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Cubic local order around Al and intermixing in short-period AlN/TiN multilayers studied by Al K-edge extended x-ray absorption fine structure spectroscopy and x-ray diffraction

O. Ersen, M.-H. Tuilier, O. Thomas, P. Gergaud, and P. Lagarde

Appl. Phys. Lett. 82, 3659 (2003); http://dx.doi.org/10.1063/1.1578692 (3 pages) | Cited 9 times

Online Publication Date: 20 May 2003

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Al K-edge extended x-ray absorption fine structure (EXAFS) experiments are performed on short-period TiN (50 nm)/AlN (Λ = 1, 2, 3, 5, and 15 nm) multilayers prepared by dc magnetron sputtering on MgO(100). It is shown that the local order around Al is hexagonal down to Λ = 3 nm and becomes clearly cubic B1 rocksalt-type below this thickness. This phase transition is correlated with x-ray diffraction results, which reveal increased compressive stresses in TiN layers for Λ = 3 nm. In addition, EXAFS provides direct evidence of substitution of Ti for Al within AlN layers, as well as an estimation of Ti content as a function of layer thickness. © 2003 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.65.Cd Superlattices
78.70.Dm X-ray absorption spectra
64.70.K- Solid-solid transitions
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