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26 May 2003

Volume 82, Issue 21, pp. 3587-3793

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Appl. Phys. Lett. 82, 3716 (2003); http://dx.doi.org/10.1063/1.1577808 (3 pages)

V. Novosad, M. Grimsditch, J. Darrouzet, J. Pearson, S. D. Bader, V. Metlushko, K. Guslienko, Y. Otani, H. Shima, and K. Fukamichi
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A high-extraction-efficiency nanopatterned organic light-emitting diode

Yong-Jae Lee, Se-Heon Kim, Joon Huh, Guk-Hyun Kim, Yong-Hee Lee, Sang-Hwan Cho, Yoon-Chang Kim, and Young Rag Do

Appl. Phys. Lett. 82, 3779 (2003); http://dx.doi.org/10.1063/1.1577823 (3 pages) | Cited 106 times

Online Publication Date: 20 May 2003

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To improve light extraction from organic light-emitting diodes (OLEDs), we introduced a photonic crystal pattern into the glass substrate of an OLED. The periodic modulation converts the guided waves in the high-refractive-index indium-tin-oxide/organic layers into external leaky waves. We used the finite-difference time-domain method to optimize the structural parameters of the photonic crystal pattern and to analyze the microcavity effect by the metallic cathode of the OLED. With the use of an optimized photonic crystal pattern, an increase of over 80% in the extraction efficiency of the OLED is expected theoretically. An increase in the extraction efficiency of over 50% was achieved experimentally, without detriment to the crucial electrical properties of the OLED. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.70.Qs Photonic bandgap materials
81.16.-c Methods of micro- and nanofabrication and processing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
02.70.Bf Finite-difference methods

A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Ya. Meltser, V. A. Solov’ev, Ya. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Yu. P. Yakovlev, P. S. Kop’ev, and Zh. I. Alferov

Appl. Phys. Lett. 82, 3782 (2003); http://dx.doi.org/10.1063/1.1577834 (3 pages) | Cited 9 times

Online Publication Date: 20 May 2003

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A mid-IR laser based on a hybrid pseudomorphic AlGaAsSb/InAs/CdMgSe heterostructure with a III–V/II–VI heterovalent interface at the 0.6-μm-InAs active region has been fabricated by molecular-beam epitaxy on p+-InAs substrate. It provides ∼1.5-eV asymmetric barriers for both electrons and holes in InAs, inhibiting carrier leakage from the active region. Despite a nonoptimal defect density at the CdMgSe/InAs interface (106–107 cm−2), the structure demonstrates lasing at ∼2.78 μm (up to 100 K) under pulse injection pumping with the threshold current density of 3–4 kA/cm2. The proposed design is promising for high-power mid-IR lasers operating at room temperature. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Optimized spectral collection efficiency obtained in diamond-based ultraviolet detectors using a three-electrode structure

F. Spaziani, M. C. Rossi, S. Salvatori, G. Conte, and P. Ascarelli

Appl. Phys. Lett. 82, 3785 (2003); http://dx.doi.org/10.1063/1.1576889 (3 pages) | Cited 14 times

Online Publication Date: 20 May 2003

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A diamond detector structure for uniform and efficient collection of photogenerated carriers in the ultraviolet spectral range is presented. The device operating principle is based on the contemporary collection of both photogenerated carriers in the bulk, and photoelectrons emitted from the diamond surface. A three-electrode device structure is used, having dual side contacts on the diamond surfaces, and a separated third electrode in the vacuum. A large improvement of the detector responsivity, as well as a compensation of the efficiency losses usually occurring for highly absorbed radiation is achieved, while keeping comparable wavelength selectivity. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Cyanine dye acting both as donor and acceptor in heterojunction photovoltaic devices

Fanshun Meng, Kongchang Chen, He Tian, Libero Zuppiroli, and Frank Nuesch

Appl. Phys. Lett. 82, 3788 (2003); http://dx.doi.org/10.1063/1.1579133 (3 pages) | Cited 25 times

Online Publication Date: 20 May 2003

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The use of cyanine dyes in thin-film heterojunction photovoltaic devices is investigated. It is demonstrated that a carbocyanine dye acts as donor in conjunction with buckminsterfullerene (C60). Due to its high electron affinity, the cyanine can also act as acceptor when using copoly(dicyano-phenylvinylene-triphenylamine) as donor. H and J aggregates of the cyanine dye play a determining role both in the photocurrent spectrum and in the open circuit voltage. Open-circuit voltages ranging from 0.25 to 1.28 V are obtained for devices using the cyanine as donor and acceptor, respectively. When the cyanine layer is sandwiched between the polymer donor and the C60 acceptor, incident photon to current conversion efficiencies greater than 10% are observed. The possibility of using cyanine dyes at the same time as donors and acceptors is a promising strategy to improve conversion efficiency. © 2003 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.ub Fullerenes and related materials
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
73.61.Wp Fullerenes and related materials
85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
73.61.Ph Polymers; organic compounds
71.55.Ht Other nonmetals
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