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26 May 2003

Volume 82, Issue 21, pp. 3587-3793

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3716 (2003); http://dx.doi.org/10.1063/1.1577808 (3 pages)

V. Novosad, M. Grimsditch, J. Darrouzet, J. Pearson, S. D. Bader, V. Metlushko, K. Guslienko, Y. Otani, H. Shima, and K. Fukamichi
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Chemical images generated by large area homogeneous illumination of metal–insulator–semiconductor structures

D. Filippini and I. Lundström

Appl. Phys. Lett. 82, 3791 (2003); http://dx.doi.org/10.1063/1.1576505 (3 pages) | Cited 8 times

Online Publication Date: 20 May 2003

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A controlled large area illumination, provided by a computer screen, is used to induce distinctive chemical images in field-effect devices upon gas exposure. The present measuring method uses the concurrent optical and chemical modulation of the semiconductor surface potential of a single metal–oxide–semiconductor capacitor to generate two-dimensional photocurrent images, displayed in a bias voltage-color space. Selective patterns for hydrogen, ammonia, and propene are demonstrated. The use of a computer screen as a programable light source allows to simplify a normally complex setup, making the technique more attractive for practical applications. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects
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