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26 May 2003

Volume 82, Issue 21, pp. 3587-3793

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3716 (2003); http://dx.doi.org/10.1063/1.1577808 (3 pages)

V. Novosad, M. Grimsditch, J. Darrouzet, J. Pearson, S. D. Bader, V. Metlushko, K. Guslienko, Y. Otani, H. Shima, and K. Fukamichi
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Supra-nonlinear photorefractive response of single-walled carbon nanotube- and C60-doped nematic liquid crystal

I. C. Khoo, J. Ding, Y. Zhang, K. Chen, and A. Diaz

Appl. Phys. Lett. 82, 3587 (2003); http://dx.doi.org/10.1063/1.1577215 (3 pages) | Cited 21 times

Online Publication Date: 20 May 2003

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We have observed an extremely large electro-optically induced photorefractive effect in nematic liquid crystal doped with single-walled carbon nanotubes and fullerene C60. The effective refractive index change coefficient can be as large as 7 cm2/W, which is >1000 times larger than previous observations. We describe the basic mechanisms and conditions necessary for occurrence of such nonlinearities. © 2003 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Jq Electro-optical effects
61.30.-v Liquid crystals
42.70.Df Liquid crystals

Optical filtering by leaky guided modes in macroporous silicon

Ivan Avrutsky and Vladimir Kochergin

Appl. Phys. Lett. 82, 3590 (2003); http://dx.doi.org/10.1063/1.1577382 (3 pages) | Cited 4 times

Online Publication Date: 20 May 2003

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We propose an optical filtering mechanism in a porous material based on wavelength-dependent losses for leaky modes in pore waveguides. The spectral transmission characteristics of such filters can be controlled by applying thin-film coatings to the pore walls. Such filters will find application in the deep UV spectral range where traditional approaches to filter design fail due to lack of suitable materials. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings

Electrically color-tunable defect mode lasing in one-dimensional photonic-band-gap system containing liquid crystal

Ryotaro Ozaki, Tatsunosuke Matsui, Masanori Ozaki, and Katsumi Yoshino

Appl. Phys. Lett. 82, 3593 (2003); http://dx.doi.org/10.1063/1.1577829 (3 pages) | Cited 70 times

Online Publication Date: 20 May 2003

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Electrical tuning of the wavelength of the defect-mode lasing in a one-dimensional periodic structure has been demonstrated using a dye-doped nematic liquid crystal as a defect layer in the periodic structure. Lasing wavelength is widely tuned upon applying an electric field, which is due to the refractive index change in the defect layer caused by the field-induced realignment of the liquid crystal molecules. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.70.Hj Laser materials
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.60.Fc Modulation, tuning, and mode locking
78.20.Jq Electro-optical effects

Enhanced single-photon emission from a quantum dot in a micropost microcavity

Jelena Vučković, David Fattal, Charles Santori, Glenn S. Solomon, and Yoshihisa Yamamoto

Appl. Phys. Lett. 82, 3596 (2003); http://dx.doi.org/10.1063/1.1577828 (3 pages) | Cited 76 times

Online Publication Date: 20 May 2003

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We demonstrate a single-photon source based on a quantum dot in a micropost microcavity that exhibits a large Purcell factor together with a small multiphoton probability. For a quantum dot on resonance with the cavity, the spontaneous emission rate is increased by a factor of 5, while the probability to emit two or more photons in the same pulse is reduced to 2% compared to a Poisson-distributed source of the same intensity. In addition to the small multiphoton probability, such a strong Purcell effect is important in a single-photon source for improving the photon outcoupling efficiency and the single-photon generation rate, and for bringing the emitted photon pulses closer to the Fourier transform limit. © 2003 American Institute of Physics.
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42.50.Ar Photon statistics and coherence theory
78.67.Hc Quantum dots
42.82.Gw Other integrated-optical elements and systems
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Fluorene-based polymer gain media for solid-state laser emission across the full visible spectrum

Ruidong Xia, George Heliotis, and Donal D. C. Bradley

Appl. Phys. Lett. 82, 3599 (2003); http://dx.doi.org/10.1063/1.1576906 (3 pages) | Cited 45 times

Online Publication Date: 20 May 2003

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We report a study of the optical gain properties of three polyfluorenes with chemically tuned emission characteristics that span 400–800 nm. We demonstrate low threshold light amplification in the blue, green, and red spectral ranges via amplified spontaneous emission (ASE) in optically pumped planar asymmetric waveguides. Gain and loss measurements at the peak ASE wavelengths show large net gains, 22 ⩽ g ⩽ 66 cm−1, and low losses, 15⩾α⩾3 cm−1. Our findings establish fluorene-based polymers as an attractive family of materials for use in tuneable solid-state lasers that emit at wavelengths across the whole visible spectrum. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

High-performance photorefractive organic glass with near-infrared sensitivity

Oksana Ostroverkhova, W. E. Moerner, Meng He, and Robert J. Twieg

Appl. Phys. Lett. 82, 3602 (2003); http://dx.doi.org/10.1063/1.1577214 (3 pages) | Cited 19 times

Online Publication Date: 20 May 2003

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A high-performance organic glass mixture comprised of two dicyanomethylenedihydrofuran derivatives is presented. A pronounced two-beam coupling effect was observed at a wavelength of 830 nm in an unsensitized composition. Sensitization with (2,4,7-trinitro-9fluorenylidene)malononitrile (TNFM) led to a significant increase in the two-beam coupling gain coefficient, reaching a net value of ∼ 370 cm−1 at an electric field of 45 V/μm at 1% TNFM, and resulted in an improvement in photorefractive speed. © 2003 American Institute of Physics.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Designer infrared filters using stacked metal lattices

Howard A. Smith, M. Rebbert, and O. Sternberg

Appl. Phys. Lett. 82, 3605 (2003); http://dx.doi.org/10.1063/1.1579115 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2003

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We have designed and fabricated infrared filters for use at wavelengths ≳15 microns. Unlike conventional dielectric filters used at the short wavelengths, ours are made from stacked metal grids, spaced at a very small fraction of the performance wavelengths. The individual lattice layers are gold, the spacers are polyimide, and they are assembled using integrated circuit processing techniques; they resemble some metallic photonic band-gap structures. We simulate the filter performance accurately, including the coupling of the propagating, near-field electromagnetic modes, using computer aided design codes. We find no anomalous absorption. The geometrical parameters of the grids are easily altered in practice, allowing for the production of tuned filters with predictable useful transmission characteristics. Although developed for astronomical instrumentation, the filters are broadly applicable in systems across infrared and terahertz bands. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers

Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure

Noriyuki Yokouchi, Aaron J. Danner, and Kent D. Choquette

Appl. Phys. Lett. 82, 3608 (2003); http://dx.doi.org/10.1063/1.1577835 (3 pages) | Cited 22 times

Online Publication Date: 20 May 2003

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A vertical-cavity surface-emitting laser with a two-dimensional photonic crystal (PC) structure has been investigated for single lateral mode operation. The PC confined mode can be controlled by the lattice constant, the hole diameter, the etching depth, and the defect structure. A seven-point defect structure is proposed to enhance the confinement effect, which is diluted by finite hole depth of the PC structure. We obtained a pure PC confined mode under room-temperature cw conditions with a PC lattice constant of 2 μm, hole diameters of 1.0 and 1.4 μm, and depths of 1.85 and 1.92 μm, respectively. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Anticompetition of laser modes

Ching-Fuh Lin, Chi-Chia Huang, Fei-Hung Chu, and Yi-Shin Su

Appl. Phys. Lett. 82, 3611 (2003); http://dx.doi.org/10.1063/1.1578708 (3 pages) | Cited 3 times

Online Publication Date: 20 May 2003

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Anticompetition of laser modes is observed. In this behavior, the increase of intensity in one lasing mode could enhance the intensity of another mode, which is opposite to the usual competition behavior and so-called anticompetition. In our experiments using the semiconductor laser with very broadband gain medium, anticompetition exists when the laser modes have their wavelengths widely separated. Anticompetition can be observed for spectral separation of 138 nm and is even more prominent for spectral separation up to 167 nm. Theoretical analysis shows that anticompetition is due to the physics similar to optical pumping. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory

Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes

X. A. Cao, S. F. LeBoeuf, L. B. Rowland, C. H. Yan, and H. Liu

Appl. Phys. Lett. 82, 3614 (2003); http://dx.doi.org/10.1063/1.1578539 (3 pages) | Cited 48 times

Online Publication Date: 20 May 2003

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Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) has been investigated to illustrate the role of localization effects in carrier capture and recombination. The devices have identical structure but with varying indium content in the active region. A large redshift of the emission peak with decreasing temperature is observed in the UV and blue LEDs over the temperature range of 77–200 K, accompanying a pronounced decrease of EL intensity. This redshift reflects carrier relaxation into lower energy localized states and the change in carrier recombination dynamics at low temperatures. In contrast, the peak energy of the green LEDs exhibits a smaller temperature-induced shift, and the emission intensity increases monotonically with decreasing temperature down to 5 K. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Fg Quantum wells
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Photonic band gap in (Pb,La)(Zr,Ti)O3 inverse opals

Bo Li, Ji Zhou, Lifeng Hao, Wei Hu, Ruilong Zong, Minmin Cai, Min Fu, Zhilun Gui, Longtu Li, and Qi Li

Appl. Phys. Lett. 82, 3617 (2003); http://dx.doi.org/10.1063/1.1578691 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2003

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(Pb,La)(Zr,Ti)O3 (PLZT) inverse opal photonic crystals were synthesized by a process of self-assembly in combination with a sol-gel technique. In this process, PLZT precursors were infiltrated into the interstices of the opal template assembled by monodisperse submicron polystyrene spheres, and then gelled in a humid environment. Polystyrene template was removed by calcining the specimen at a final temperature of 700 °C accompanied with the crystallization of perovskite phase in PLZT inverse opal network. Scanning electron microscope images show that the inverse opals possess a fcc structure with a lattice constant of 250 nm. A wide photonic band gap in the visible range is observed from transmission spectra of the sample. Such PLZT inverse opals as photonic crystals should be of importance in device applications. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Qs Photonic bandgap materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
42.50.-p Quantum optics
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.66.Fn Inorganic compounds

8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth

Appl. Phys. Lett. 82, 3620 (2003); http://dx.doi.org/10.1063/1.1579137 (3 pages) | Cited 17 times

Online Publication Date: 20 May 2003

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We demonstrate more than 8-W continuous-wave output power with good beam quality (M2<1.8) from an optically pumped semiconductor disk laser. The combination of low threshold density of 470 W/cm2 and high differential efficiency of 60% results in an optical-to-optical conversion efficiency of 46% for this high output level. Good epitaxial quality and low thermal resistance allow the scaling of output power with pump spot area. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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