APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 May 2003

Volume 82, Issue 21, pp. 3587-3793

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3716 (2003); http://dx.doi.org/10.1063/1.1577808 (3 pages)

V. Novosad, M. Grimsditch, J. Darrouzet, J. Pearson, S. D. Bader, V. Metlushko, K. Guslienko, Y. Otani, H. Shima, and K. Fukamichi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Orientation dependence of piezoelectric properties of single domain 0.67Pb(Mn1/3Nb2/3)O3–0.33PbTiO3 crystals

Rui Zhang, Bei Jiang, and Wenwu Cao

Appl. Phys. Lett. 82, 3737 (2003); http://dx.doi.org/10.1063/1.1576510 (3 pages) | Cited 51 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
The orientation dependence of piezoelectric properties has been calculated for 0.67Pb(Mn1/3Nb2/3)O3–0.33PbTiO3 (PMN–33%PT) single-domain crystals based on the measured full matrix properties. It is found that the maximum d33∗ = 2411 pC/N and k33∗ = 0.94 occur, respectively, in directions 63.0° and 70.8° from the spontaneous polarization direction. In [001] of the cubic coordinate, the rotated properties are d33∗ = 2316 pC/N and k33∗ = 0.93, respectively, comparable to the measured multidomain properties. The results revealed the origin of the superior electromechanical properties in [001] poled PMN–33%PT multidomain crystals as from the large d15 of the single-domain property. © 2003 American Institute of Physics.
Show PACS
77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Surface energy maps of nanostructures: Atomic force microscopy and numerical simulation study

Ádám Mechler, Janos Kokavecz, Peter Heszler, and Ratnesh Lal

Appl. Phys. Lett. 82, 3740 (2003); http://dx.doi.org/10.1063/1.1577392 (3 pages) | Cited 14 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Topography and surface energy distribution of etched graphite were examined by atomic force microscopy (AFM). AFM images show atomic monolayer deep circular holes (etch pits). At certain imaging conditions, these etch pits appear surrounded by rims. Numerical simulation of AFM images reveals that the rims are formed due to an increased surface energy zone at the edges. The vertical dimension of the rim correlates with the magnitude of the local surface energy. Such a correlation between the imaging features and the surface energy profiles can be used to demarcate local chemical constituents in a composite nanomaterial. © 2003 American Institute of Physics.
Show PACS
68.35.Md Surface thermodynamics, surface energies
61.46.-w Structure of nanoscale materials
68.37.Ps Atomic force microscopy (AFM)

Interface structures in FePt/Fe3Pt hard-soft exchange-coupled magnetic nanocomposites

Jing Li, Zhong Lin Wang, Hao Zeng, Shouheng Sun, and J. Ping Liu

Appl. Phys. Lett. 82, 3743 (2003); http://dx.doi.org/10.1063/1.1578515 (3 pages) | Cited 14 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-assembly of FePt and Fe3O4 nanoparticles of different sizes led to various FePt–Fe3O4 nanocomposites. Annealing the composite under reducing atmosphere at 650 and 700 °C induced magnetically hard FePt phase and magnetically soft Fe3Pt phase. The FePt and Fe3Pt phases were either linked by a common interface or coexisted within one grain as domains with sizes <10 nm. This ensures the effective exchange coupling of magnetically hard and soft phases. High-resolution transmission electron microscopy studies provide detailed structural characterization for the FePt based nanocomposites. © 2003 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
75.50.Tt Fine-particle systems; nanocrystalline materials
68.37.Lp Transmission electron microscopy (TEM)
81.05.Bx Metals, semimetals, and alloys
75.30.Et Exchange and superexchange interactions
68.35.Ct Interface structure and roughness
75.50.Bb Fe and its alloys
61.72.Cc Kinetics of defect formation and annealing
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments

Noncovalent functionalization of carbon nanotubes by aromatic organic molecules

Jijun Zhao, Jian Ping Lu, Jie Han, and Chih-Kai Yang

Appl. Phys. Lett. 82, 3746 (2003); http://dx.doi.org/10.1063/1.1577381 (3 pages) | Cited 75 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The interaction between carbon nanotubes and organic molecules including benzene (C6H6), cyclohexane (C6H12), and 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ: C8N2O2Cl2) have been studied using first principles calculations. The equilibrium tube-molecule distance, adsorption energy, and charge transfer are obtained. The hybridization between the DDQ molecular level and nanotube valence bands transforms the semiconducting tube into a metallic one. Coupling of π electrons between tubes and aromatic molecules are observed. Our results show that noncovalent functionalization of carbon nanotubes by aromatic molecules is an efficient way to control the electronic properties of carbon nanotubes. © 2003 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
73.22.Dj Single particle states
68.43.Bc Ab initio calculations of adsorbate structure and reactions

InAs nanowires and whiskers grown by reaction of indium with GaAs

Maoqi He, M. M. E. Fahmi, S. Noor Mohammad, Randolph N. Jacobs, Lourdes Salamanca-Riba, Frederick Felt, Muzar Jah, Ashok Sharma, and Darryl Lakins

Appl. Phys. Lett. 82, 3749 (2003); http://dx.doi.org/10.1063/1.1578519 (3 pages) | Cited 31 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N2 or NH3 to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 μm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. The method for synthesis involved no any template, catalyst, toxic As source, nor even lattice matched substrate. © 2003 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.16.Be Chemical synthesis methods
81.05.Ea III-V semiconductors

Nitrogen-doped gallium phosphide nanobelts

Hee Won Seo, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Myungil Kang, Sangsig Kim, Ju Chul Park, and Soun Young Lee

Appl. Phys. Lett. 82, 3752 (2003); http://dx.doi.org/10.1063/1.1578521 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nitrogen-doped gallium phosphide nanobelts were directly synthesized via a sublimation of ball-milled powders under ammonia flow. The average width of the nanobelts is 300 nm and the thickness is about 1/10 of the width. They consist of single-crystalline zinc blende structure crystal with the [111] direction parallel to the belt axis. Electron energy-loss spectroscopy reveals that the nitrogen doping occurs mainly in the surface region. Photoluminescence shows the typical isoelectronic bound exciton peaks in the range of 2.11–2.25 eV, suggesting a concentration of ∼ 1018 cm−3 nitrogen atoms. © 2003 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.07.Wx Nanopowders
81.16.Be Chemical synthesis methods
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.22.Lp Collective excitations
79.20.Uv Electron energy loss spectroscopy
68.65.La Quantum wires (patterned in quantum wells)
73.21.Hb Quantum wires
71.35.-y Excitons and related phenomena
64.70.Hz Solid-vapor transitions
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Effect of capillary-condensed water on the dynamic friction force at nanoasperity contacts

L. Sirghi

Appl. Phys. Lett. 82, 3755 (2003); http://dx.doi.org/10.1063/1.1572533 (3 pages) | Cited 16 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A single nanoasperity contact in ambient air is usually wetted by capillary condensation of water vapor and is surrounded by a water meniscus. This phenomenon strongly affects the contact friction, not only by the effect of meniscus loading force (superficial tension and capillary forces), but also by a friction force that accounts for the energy loss in the meniscus movement along with the sliding contact. Occurrence of the water-meniscus-generated friction is experimentally proved by atomic force microscopy measurements of the tip–sample friction force at minimum possible external load (before pull-off). A qualitative explanation for the observed dependence of the friction force on air humidity and solid surface wettability is proposed. © 2003 American Institute of Physics.
Show PACS
68.08.Bc Wetting
62.20.Qp Friction, tribology, and hardness
68.03.Cd Surface tension and related phenomena
64.70.F- Liquid-vapor transitions
68.03.Fg Evaporation and condensation of liquids

Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

D. M. Bruls, P. M. Koenraad, H. W. M. Salemink, J. H. Wolter, M. Hopkinson, and M. S. Skolnick

Appl. Phys. Lett. 82, 3758 (2003); http://dx.doi.org/10.1063/1.1578709 (3 pages) | Cited 3 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Structures containing stacked self-assembled InAs quantum dots within a GaAs matrix are studied by cross-sectional scanning tunneling microscopy. The dots consist of an InGaAs alloy with an increasing indium concentration in the growth direction. From comparison of the lattice constant profiles of stacked and unstacked dots, it is evident that the strain in the GaAs matrix around the dots is strongly affected by the stacking process. The results show an increasing deformation of the dots in the stack and a reduced growth rate of the GaAs spacer layers, resulting in the formation of terraces on the growth surface on which new dots form. If the total structure, containing the dot layers and the spacer layers, exceeds 30 nm, the local GaAs growth rate remains constant from this point on. The InAs dot growth rate remains constant throughout the entire stack. © 2003 American Institute of Physics.
Show PACS
68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Carrier storage and capture dynamics in quantum-dot heterostructures

J. M. Smith, P. A. Dalgarno, B. Urbaszek, E. J. McGhee, G. S. Buller, G. J. Nott, R. J. Warburton, J. M. Garcia, W. Schoenfeld, and P. M. Petroff

Appl. Phys. Lett. 82, 3761 (2003); http://dx.doi.org/10.1063/1.1577830 (3 pages) | Cited 7 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoluminescence and time-resolved photoluminescence measurements of charge tunable quantum-dot heterostructures reveal that by appropriate biasing of the device, about 90% of photogenerated holes can be stored at an interface near to the nanostructures and subsequently transferred into the nanostructures in a controlled fashion. The capture dynamics are sensitive to the form of the valence band potential in the layer that caps the Stranski–Krastanow dots. The dependence of the capture rate on applied electric field suggests that the valence band confinement potential is “soft” in the capping layer, with a spatial extent of around 14 nm. © 2003 American Institute of Physics.
Show PACS
78.67.Hc Quantum dots
73.61.Ey III-V semiconductors
73.21.La Quantum dots
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

The fabrication of photonic band gap materials with a two-dimensional defect

Yuxia Zhao, Kurt Wostyn, Gaetan de Schaetzen, Koen Clays, Louis Hellemans, Andre Persoons, Marta Szekeres, and Robert A. Schoonheydt

Appl. Phys. Lett. 82, 3764 (2003); http://dx.doi.org/10.1063/1.1578713 (3 pages) | Cited 31 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Colloidal crystals with three-dimensional periodicities in the refractive index have a photonic band gap (PBG) in which electromagnetic waves are forbidden. We present a method to fabricate stacked colloidal crystals containing a two-dimensional defect as a middle layer by combining vertical deposition method with the Langmuir–Blodgett (LB) technique. The defect layer introduces an impurity mode within the optical stop band, which is observed as a defect peak (pass band) in the optical density spectrum. The result shows that the combination of vertical deposition with LB technique provides a way for introducing defect modes in PBG materials. © 2003 American Institute of Physics.
Show PACS
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
42.70.Qs Photonic bandgap materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
82.70.Dd Colloids
42.50.-p Quantum optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Wc Optical coatings

Effects of discrete energy levels on single-electron tunneling in coupled metal particles

Bing Wang, Kedong Wang, Wei Lu, Haiqian Wang, Zhenyu Li, Jinlong Yang, and J. G. Hou

Appl. Phys. Lett. 82, 3767 (2003); http://dx.doi.org/10.1063/1.1579121 (3 pages) | Cited 13 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the measurements of single-electron tunneling (SET) spectra for individual and coupled ultrasmall palladium nanoparticles using scanning tunneling microscopy. Extra fine structures, in addition to the Coulomb blockade and staircases in current–voltage curves, was observed for individual Pd particles of about 2 nm in diameter, which is attributed to the interplay of the SET effect and the effects of discrete energy levels due to significant quantum confinement effects in nanoparticles. The origination of the negative differential resistance effect in series-coupled Pd particles is also attributed to the discreteness of energy levels of both the coupled Pd particles. © 2003 American Institute of Physics.
Show PACS
73.23.Hk Coulomb blockade; single-electron tunneling
73.61.At Metal and metallic alloys
73.22.Dj Single particle states

Fabrication of flexible field emitter arrays of carbon nanotubes using self-assembly monolayers

Ok-Joo Lee and Kun-Hong Lee

Appl. Phys. Lett. 82, 3770 (2003); http://dx.doi.org/10.1063/1.1578520 (3 pages) | Cited 29 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports on flexible field emitter arrays of single-walled carbon nanotubes (SWNTs) aligned on organic polymer substrates. An array of gold electrodes was patterned on the Ti-coated polymer substrate by sputtering gold through a shadow mask. A self-assembly monolayer of organic molecules was then formed on the gold electrodes using thiol chemistry. Cut SWNTs prepared by acidic treatment were attached to the end of the organic molecules. The field emission measurement showed that the turn-on field was 3.88 V/μm at the emission current density of 10 μA/cm2. The current density was 1.6 mA/cm2 at 6 V/μm. This room temperature process is suitable for the fabrication of flexible electronic devices with carbon nanotubes. © 2003 American Institute of Physics.
Show PACS
85.35.Kt Nanotube devices
81.07.De Nanotubes
85.45.Db Field emitters and arrays, cold electron emitters
81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
73.63.Fg Nanotubes
79.70.+q Field emission, ionization, evaporation, and desorption

Fabrication and transport characterization of a primary thermometer formed by Coulomb islands in a suspended silicon nanowire

Armin T. Tilke, Laura Pescini, Heribert Lorenz, and Robert H. Blick

Appl. Phys. Lett. 82, 3773 (2003); http://dx.doi.org/10.1063/1.1578184 (3 pages) | Cited 6 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We realized bolometers in suspended highly n-doped silicon nanowires with lateral dimensions down to about 40 nm. Random dopant fluctuations in the suspended wires lead to the formation of multiple tunnel junctions, utilized for Coulomb blockade thermometry. In the low bias regime, we observe relaxation via discrete acoustic phonon modes to give a lower bound for the sensitivity. © 2003 American Institute of Physics.
Show PACS
07.20.Dt Thermometers
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.23.Hk Coulomb blockade; single-electron tunneling
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Nanostructuring of silicon by electron-beam lithography of self-assembled hydroxybiphenyl monolayers

A. Küller, W. Eck, V. Stadler, W. Geyer, and A. Gölzhäuser

Appl. Phys. Lett. 82, 3776 (2003); http://dx.doi.org/10.1063/1.1578537 (3 pages) | Cited 32 times

Online Publication Date: 20 May 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the fabrication of silicon nanostructures using aromatic hydroxybiphenyl self-assembled monolayers as ultrathin (1.1 nm) negative tone electron-beam resist. The formation of the monolayer and the electron-induced crosslinking have been characterized by x-ray photoelectron spectroscopy. Nanometer size patterns were defined by electron-beam lithography in the molecular layer and transferred into silicon by wet chemical etching with potassium hydroxide. We demonstrate the fabrication of silicon line gratings with a resolution of ∼20 nm and of isolated silicon lines with linewidths down to ∼10 nm. © 2003 American Institute of Physics.
Show PACS
81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.47.Fg Semiconductor surfaces
81.16.Dn Self-assembly
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.65.Cf Surface cleaning, etching, patterning
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close