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26 May 2003

Volume 82, Issue 21, pp. 3587-3793

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Appl. Phys. Lett. 82, 3716 (2003); http://dx.doi.org/10.1063/1.1577808 (3 pages)

V. Novosad, M. Grimsditch, J. Darrouzet, J. Pearson, S. D. Bader, V. Metlushko, K. Guslienko, Y. Otani, H. Shima, and K. Fukamichi
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High-intensity regime of x-ray generation from relativistic laser plasmas

Georg Pretzler, Felix Brandl, Jürgen Stein, Ernst Fill, and Jaroslav Kuba

Appl. Phys. Lett. 82, 3623 (2003); http://dx.doi.org/10.1063/1.1577832 (3 pages) | Cited 5 times

Online Publication Date: 20 May 2003

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We report experiments exhibiting specific features in generating hard x rays with femtosecond laser plasmas as relativistic intensities are approached. Copper foils are irradiated with 1-J/130-fs Ti:sapphire laser pulses, and the x rays are detected with spatial resolution. The results demonstrate a dramatic reduction in the x-ray-emitting spot size at intensities around 1019 W/cm2, and a corresponding increase in the x-ray flux density. These findings are explained in terms of forward acceleration of electrons due to relativistic effects. © 2003 American Institute of Physics.
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52.59.Px Hard X-ray sources
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.27.Ny Relativistic plasmas
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

Mass spectrometry sampling method for characterizing high-density plasma etching mechanisms

C. R. Eddy, D. Leonhardt, V. A. Shamamian, J. E. Butler, and B. D. Thoms

Appl. Phys. Lett. 82, 3626 (2003); http://dx.doi.org/10.1063/1.1577831 (3 pages) | Cited 1 time

Online Publication Date: 20 May 2003

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Mass spectrometry sampling using a “through-the-platen” technique is described with respect to its utility in characterizing high-density plasma etching processes for semiconductors. A custom substrate platen/sampling aperture is described and its effectiveness in characterizing plasma/surface reactions is demonstrated. The technique is applied to the characterization of GaAs etching in a Cl2/Ar high-density plasma chemistry. © 2003 American Institute of Physics.
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52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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