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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Wavelength tuning of surface plasmon resonance using dielectric layers on silver island films

G. Xu, M. Tazawa, P. Jin, S. Nakao, and K. Yoshimura

Appl. Phys. Lett. 82, 3811 (2003); http://dx.doi.org/10.1063/1.1578518 (3 pages) | Cited 75 times

Online Publication Date: 27 May 2003

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A simple and effective method was demonstrated to tune surface plasmon resonance (SPR) wavelength of silver island films by introducing a dielectric medium to vary interisland dielectric constant. The medium, either overcoating or sandwiching the silver islands, can make a dramatic effect on the tunability. We had extended the SPR wavelength tunability of standard silver island film substrates from 432 to 482 nm to 506 to 1310 nm using two dielectric layering methods. A generalized Maxwell–Garnett theory was applied to interpret these results. © 2003 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
77.22.Ch Permittivity (dielectric function)
78.68.+m Optical properties of surfaces
77.55.-g Dielectric thin films
68.47.De Metallic surfaces
78.40.Kc Metals, semimetals, and alloys
78.30.Er Solid metals and alloys
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers

H. Shen, K. Aliberti, B. Stann, P. Newman, R. Mehandru, and F. Ren

Appl. Phys. Lett. 82, 3814 (2003); http://dx.doi.org/10.1063/1.1579117 (3 pages) | Cited 2 times

Online Publication Date: 27 May 2003

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We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal–semiconductor–metal photodetector (MSM–PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM–PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Sx Metal-semiconductor-metal structures
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors

Toshio Nishida, Tomoyuki Ban, and Naoki Kobayashi

Appl. Phys. Lett. 82, 3817 (2003); http://dx.doi.org/10.1063/1.1580649 (3 pages) | Cited 12 times

Online Publication Date: 27 May 2003

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The high-color-rendering (HCR) potential of the light sources consisting of 350-nm ultraviolet light-emitting diodes (UV-LED) and three-basal-color phosphors was simulated and experimentally confirmed. By using an AlGaN-based UV-LED as an excitation source at the 350-nm wavelength, we measured fluorescence spectra of three-basal-color phosphors, and simulated the optimum phosphor mixture based on the Commission Internationale de l’Eclairage standard light sources D75, D65, D55, D50, C, and A, with HCR indexes (Ra) over 92. We confirmed the potential of HCR of this light source consisting of 350-nm UV-LED and three-basal-color phosphors, by obtaining Ra = 86 ∼ 89 of the incandescent type of standard light source A experimentally. Such high Ra are due to the highly monochromatic UV-LED emission and the wide spectral separation between the UV excitation (350 nm) and visible fluorescences. This combination also provides a diffusive, nonglare light source with highly steady color independent of the emission orientation. We also examined the importance of the separation between the excitation wavelength and the fluorescence emission wavelength for practical lighting applications. © 2003 American Institute of Physics.
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42.72.Bj Visible and ultraviolet sources
85.60.Jb Light-emitting devices
78.55.Et II-VI semiconductors
78.55.Hx Other solid inorganic materials

Beam shaping by a periodic structure with negative refraction

Ilya V. Shadrivov, Andrey A. Sukhorukov, and Yuri S. Kivshar

Appl. Phys. Lett. 82, 3820 (2003); http://dx.doi.org/10.1063/1.1579849 (3 pages) | Cited 45 times

Online Publication Date: 27 May 2003

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We analyze transmission of a layered photonic structure (a one-dimensional photonic crystal) consisting of alternating slabs of two materials with positive and negative refractive index. For the periodic structure with zero averaged refractive index, we demonstrate a number of unique properties of the beam transmission observed in strong beam modification and reshaping. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.25.Bs Wave propagation, transmission and absorption
42.25.Gy Edge and boundary effects; reflection and refraction
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Polymeric wavelength filters fabricated using holographic surface relief gratings on azobenzene-containing polymer films

Jae-Wook Kang, Mi-Jeong Kim, Jae-Pil Kim, Seong-Jong Yoo, Jae-Suk Lee, Dong Yu Kim, and Jang-Joo Kim

Appl. Phys. Lett. 82, 3823 (2003); http://dx.doi.org/10.1063/1.1579847 (3 pages) | Cited 22 times

Online Publication Date: 27 May 2003

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Polymeric wavelength filters with Bragg gratings have been fabricated using holographic surface relief gratings on azobenzene polymer films. In order to fabricate Bragg gratings on polymer waveguides, we used holographic surface relief gratings on the azobenzene polymer film as an etch mask and the grating patterns were transferred to the polymer waveguides by O2 reactive ion etching. The grating period was ∼ 500 nm and the depth was ∼ 30 nm with a 10-mm-long Bragg grating length. A transmission dip of −15 dB at the Bragg wavelength and a 3-dB-transmission bandwidth of ∼ 0.2 nm were obtained from the device. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.40.Eq Holographic optical elements; holographic gratings
42.70.Jk Polymers and organics
42.25.Bs Wave propagation, transmission and absorption
42.82.Cr Fabrication techniques; lithography, pattern transfer

Excited-state absorption in NdAl3(BO3)4 laser crystal

A. Brenier, D. Jaque, J. Garcia Solé, and Z. D. Luo

Appl. Phys. Lett. 82, 3826 (2003); http://dx.doi.org/10.1063/1.1579123 (3 pages) | Cited 3 times

Online Publication Date: 27 May 2003

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We present an investigation in NdAl3(BO3)4 (NAB) crystal of the excited-state absorption (ESA) around the main laser lines (1060 and 1338 nm) by the so called excited-state excitation technique. The involved transitions are from the 4F3/2 level toward the 4G7/2+4G9/2+2K13/2 levels (1300–1400 nm range) or toward the 2G9/2+4G11/2+2D3/2+2K15/2 levels (1020–1100 nm range). We have performed the Judd–Ofelt analysis extended to anisotropic crystals in order to get the cross sections (cm2). In each case, the ESA peaks do not coincide with the laser emission ones, but a reduction of the effective laser emission cross section is observed at 1338 nm. Finally, the values obtained from the application of the Judd–Ofelt formalism have been used to estimate the influence of ESA in the pumping domain on the laser performance. It has been found that its contribution is not significant, indicating that NAB is an excellent candidate for efficient high-power microchip lasers emitting at 1060 and 1338 nm. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers

Mutual pulse injection-seeding scheme by the use of two Fabry–Pérot laser diodes for tunable dual-wavelength optical short-pulse generation

D. N. Wang and Xiaohui Fang

Appl. Phys. Lett. 82, 3829 (2003); http://dx.doi.org/10.1063/1.1579846 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2003

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Two Fabry–Pérot laser diodes, one being gain switched and the other dc biased, are used in a mutual pulse injection-seeding scheme for tunable dual-wavelength optical short-pulse generation. Wavelength selection and tuning are achieved by adjusting two fiber Bragg gratings and optical delay lines while a constant repetition frequency of 1.5053 GHz is maintained. An erbium-doped fiber amplifier is employed to enhance light intensity injected to the laser diode. The sidemode suppression ratio of the output pulses achieved is better than 25 dB over the wavelength-tuning range of 12.1 nm. The system is robust, flexible, and convenient for wavelength tuning. © 2003 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Orange and red upconversion laser pumped by an avalanche mechanism in Pr3+, Yb3+:BaY2F8

E. Osiac, E. Heumann, G. Huber, S. Kück, E. Sani, A. Toncelli, and M. Tonelli

Appl. Phys. Lett. 82, 3832 (2003); http://dx.doi.org/10.1063/1.1579561 (3 pages) | Cited 25 times

Online Publication Date: 27 May 2003

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The letter reports on upconverted orange (607.5 nm, 3P0→3H6) and red (638.7 nm, 3P0→3F2) laser oscillation at room temperature observed in Pr3+, Yb3+:BaY2F8 under excitation at 822 or 841 nm at 300 K. The upconversion mechanism that populates the emitting level is an avalanche excitation mechanism. Output powers up to 55 mW and slope efficiencies up to 27% were demonstrated at 607.5 nm. At 638.7 nm, the maximum output power was 26 mW with a slope efficiency of about 13.5%. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photonic crystal structure with square symmetry within each layer and a three-dimensional band gap

David Roundy and John Joannopoulos

Appl. Phys. Lett. 82, 3835 (2003); http://dx.doi.org/10.1063/1.1579873 (3 pages) | Cited 14 times

Online Publication Date: 27 May 2003

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We present a layered photonic crystal structure having a connectivity that is different from diamond which possesses square symmetry within each layer. This structure has a complete photonic band gap of 18% of the midgap frequency with a dielectric contrast of 12:1, and is a structure with layered square symmetry having a gap greater than 10%. We demonstrate a waveguide in this crystal created by removing a row of rods from a single layer. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

A 33% efficient chemical oxygen–iodine laser with supersonic mixing of iodine and oxygen

V. Rybalkin, A. Katz, B. D. Barmashenko, and S. Rosenwaks

Appl. Phys. Lett. 82, 3838 (2003); http://dx.doi.org/10.1063/1.1580634 (3 pages) | Cited 9 times

Online Publication Date: 27 May 2003

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We report on a highly efficient supersonic chemical oxygen–iodine laser (COIL), with supersonic mixing of iodine and oxygen. Output power exceeding 0.5 kW with chemical efficiency of ∼33% was obtained in a 5-cm gain length for Cl2 flow rate of 17 mmole/s. A 33% efficiency is the highest reported chemical efficiency of any supersonic COIL. Comparison between different mixing schemes shows that, for supersonic mixing, the output power and chemical efficiency are about 20% higher than for transonic mixing scheme. The optimal conditions for the efficient operation are investigated. © 2003 American Institute of Physics.
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42.55.Ks Chemical lasers
42.60.By Design of specific laser systems
47.40.Ki Supersonic and hypersonic flows
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
47.60.-i Flow phenomena in quasi-one-dimensional systems

Single-pass gain in a chirped quasi-phase-matched optical parametric oscillator

K. L. Baker

Appl. Phys. Lett. 82, 3841 (2003); http://dx.doi.org/10.1063/1.1579848 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2003

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In this letter, the single-pass gain of a quasi-phase-matched optical parametric oscillator with chirped poling is calculated. Specifically, the single-pass gain from optical parametric oscillators containing a zn chirped profile of their periodically poled grating wavelength is derived. Using the calculated gain, the parametric oscillator threshold is determined. Both the gain and threshold condition for a chirped device contain an increased power scaling in the pump intensity over a uniformly poled device due to the pump power dependence in the interaction length. The chirped poling structure exhibits a lower gain, a higher threshold, and a larger bandwidth at threshold than uniformly chirped devices with the same overall crystal length. © 2003 American Institute of Physics.
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42.65.Lm Parametric down conversion and production of entangled photons
77.22.Ej Polarization and depolarization
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Effects of pulsed potential on address electrode in a surface-discharge alternating-current plasma display panel

Jeong Chull Ahn, Youichi Shintani, Kunihide Tachibana, Tetsuo Sakai, and Naoki Kosugi

Appl. Phys. Lett. 82, 3844 (2003); http://dx.doi.org/10.1063/1.1580638 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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The influence of pulsed potential application onto the address electrode of an ac-type plasma display panel was investigated from the observation of front and side views of Xe atom densities in the metastable (1s5) and excited (2p) states in a unit discharge cell by using microscopic laser absorption spectroscopy and optical emission spectroscopy. It was seen that a predischarge occurs between the address electrode and one of the sustain electrode worked as a preceding anode, which is a similar effect found previously by applying a higher sustain voltage. The predischarge partially erases the surface charge accumulated in the preceding pulse, but it induces a faster main sustain discharge, bowing towards the address electrode, and enhances the production efficiency of Xe(1s5) atoms, if the applied potential is within an optimal range. © 2003 American Institute of Physics.
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85.60.Pg Display systems
52.75.-d Plasma devices
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Wq Discharge in liquids and solids
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Epitaxial (100) iridium on A-plane sapphire: A system for wafer-scale diamond heteroepitaxy

Z. Dai, C. Bednarski-Meinke, R. Loloee, and B. Golding

Appl. Phys. Lett. 82, 3847 (2003); http://dx.doi.org/10.1063/1.1579560 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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Large-scale heteroepitaxial growth of diamond depends critically on the development of a suitable lattice-matched buffer layer and substrate system. Epitaxial (100) iridium films have been grown on terraced, vicinal a-plane (11math0) α-Al2O3 (sapphire) by electron-beam evaporation. The epitaxial relationship, Ir(100)//Al2O3(11math0) with Ir[011]//Al2O3[1math00], was determined by x-ray diffraction and electron backscattering diffraction analysis. For a 300-nm thickness of Ir, a (200) rocking curve yielded a linewidth of 0.21°, and the film exhibited a macrostepped surface with low pinhole density. This Ir/sapphire system provides a basis for large-area growth of (100) heteroepitaxial diamond. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
81.05.U- Carbon/carbon-based materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells

Yue Jun Sun, Oliver Brandt, Manfred Ramsteiner, Holger T. Grahn, and Klaus H. Ploog

Appl. Phys. Lett. 82, 3850 (2003); http://dx.doi.org/10.1063/1.1579563 (3 pages) | Cited 48 times

Online Publication Date: 27 May 2003

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We investigate the polarization anisotropy of the photoluminescence of an M-plane (1math00) In0.1Ga0.9N/GaN multiple quantum well grown on γ-LiAlO2 (100) by molecular-beam epitaxy. In contrast to C-plane (0001) structures, a strong in-plane optical anisotropy with an energy-dependent polarization degree of up to 96% is observed for this M-plane sample. An apparent spectral shift of the emission with polarization angle is attributed to the impact of exciton localization on the polarization degree. The presence of localized states manifests itself further in the anomalous temperature dependence of the photoluminescence linewidth. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates

H. Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, and J. C. Sturm

Appl. Phys. Lett. 82, 3853 (2003); http://dx.doi.org/10.1063/1.1578168 (3 pages) | Cited 25 times

Online Publication Date: 27 May 2003

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Strain partitioning of crystalline Si and amorphous SiO2 deposited on crystalline SiGe on a compliant viscous borophosphorosilicate (BPSG) glass has been observed. Pseudomorphic epitaxial Si was deposited on SiGe films, which were fabricated on BPSG by wafer bonding and the Smart-cut® process. The strains in SiGe and Si films were found to change identically during a high-temperature anneal which softened the BPSG film, indicating a coherent interface between SiGe and Si films and precluding slippage or the formation of misfit dislocations along the interface. The stress balance between the layers dictated the final state, which confirmed that BPSG was a perfectly compliant substrate and did not exert any force on the layers above it. Similar results were found for amorphous SiO2 deposited on SiGe on BPSG and then annealed. This shows that the viscous BPSG is an effective compliant substrate for the strain engineering of elastic films without the introduction of dislocations. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.35.Np Adhesion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Ct Interface structure and roughness

Spatially resolved Poisson strain and anticlastic curvature measurements in Si under large deflection bending

Wenge Yang, B. C. Larson, G. E. Ice, J. Z. Tischler, J. D. Budai, K.-S. Chung, and W. P. Lowe

Appl. Phys. Lett. 82, 3856 (2003); http://dx.doi.org/10.1063/1.1579857 (3 pages) | Cited 20 times

Online Publication Date: 27 May 2003

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A scanning-monochromatic form of differential-aperture x-ray microscopy (DAXM) has been developed that provides micron-resolution depth-resolved dilatational strain measurements. This scanning-monochromatic DAXM technique is applied to measurements of Poisson dilatational strain in 25-μm-thick Si bent into an arch with an apex radius of R = 3 mm. Poisson strain measurements agree with anisotropic linear elasticity calculations for a Searle parameter as large as β = 1009. Local anticlastic bend radii were shown to oscillate across the arch and reach the R/ν limit for distances less than the plate thickness from the edges, where ν is the anisotropic Poisson’s ratio. © 2003 American Institute of Physics.
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62.20.D- Elasticity
62.20.F- Deformation and plasticity
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Zhangcheng Xu, Dan Birkedal, Jørn M. Hvam, Zongyan Zhao, Yanmei Liu, Kuntang Yang, Aloke Kanjilal, and Janusz Sadowski

Appl. Phys. Lett. 82, 3859 (2003); http://dx.doi.org/10.1063/1.1581005 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki–Taupin equations. Excellent agreement between the experimental curve and the simulation is achieved assuming that indium-rich VCSML QDs are embedded in a quantum well (QW) with lower indium content and an observed QD coverage of 10%. In the VCSML QDs, the vertical lattice mismatch of the InAs monolayer with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic—polarized in the edge geometry. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Electroluminescence of a quantum dot cascade structure

S. Anders, L. Rebohle, F. F. Schrey, W. Schrenk, K. Unterrainer, and G. Strasser

Appl. Phys. Lett. 82, 3862 (2003); http://dx.doi.org/10.1063/1.1579854 (3 pages) | Cited 17 times

Online Publication Date: 27 May 2003

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We present electroluminescence and photocurrent measurements on InAs quantum dots that are embedded into a cascaded GaAs/AlAs structure. Compared to a quantum cascade laser, population inversion in a quantum dot cascade laser should potentially occur at a lower threshold. The electroluminescence spectra of our device peak in the midinfrared at about 150 meV. From the polarization behavior of the electroluminescence, we conclude that quantum dots are the origin of the optical transition. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.60.Fi Electroluminescence
73.63.Kv Quantum dots
42.55.Px Semiconductor lasers; laser diodes
73.50.Pz Photoconduction and photovoltaic effects

Electrically active defects in silicon produced by ion channeling

H. Kortegaard Nielsen, B. G. Svensson, J.-J. Goubet, and A. Nylandsted Larsen

Appl. Phys. Lett. 82, 3865 (2003); http://dx.doi.org/10.1063/1.1580640 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2003

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Low-dose implantations with 65 Si and 150 keV Ge ions into the n+ top layer of Si n+p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM calculations and results from 2 MeV electron irradiations. Previously, ion channeling was disregarded in studies on point defect migration at room temperature using ion implantation in surface layers. In our studies, ion channeling is dominant and it overwhelms any contribution from point defect diffusion. © 2003 American Institute of Physics.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
61.80.Fe Electron and positron radiation effects

Time-resolved energy dispersive x-ray reflectometry measurements on ruthenium phthalocyanine gas sensing films

V. Rossi Albertini, A. Generosi, B. Paci, P. Perfetti, G. Rossi, A. Capobianchi, A. M. Paoletti, and R. Caminiti

Appl. Phys. Lett. 82, 3868 (2003); http://dx.doi.org/10.1063/1.1579868 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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The energy dispersive (ED) variant of the conventional x-ray reflectivity (XR) provides an atomic scale determination of the morphological characteristics of thin films, such as their thickness and surface roughness. We report on the in situ EDXR measurements of the (minimal) morphological changes of ruthenium phthalocyanine gas sensing thin films. A series of reflectivity spectra have been collected, during the exposure of the films to a gas flux of nitrogen oxides (NOx) molecules. The measurements allowed a very high density time sampling of the evolution of the two morphological parameters, providing important information on the gas-film interaction. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
68.55.-a Thin film structure and morphology
61.05.cm X-ray reflectometry (surfaces, interfaces, films)

Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2

G. Franzò, S. Boninelli, D. Pacifici, F. Priolo, F. Iacona, and C. Bongiorno

Appl. Phys. Lett. 82, 3871 (2003); http://dx.doi.org/10.1063/1.1579555 (3 pages) | Cited 79 times

Online Publication Date: 27 May 2003

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In this letter, the role of amorphous Si clusters in the excitation of Er implanted in substoichiometric SiOx films will be elucidated. It will be shown that the temperature of the SiOx thermal process prior to Er implantation is crucial in determining the luminescence properties of the samples. In particular, the luminescence intensity at 1.54 μm is almost constant for SiOx samples not annealed or pre-annealed at temperatures lower than 800 °C, reaches the maximum at 800 °C, and decreases at higher temperatures. The structural properties of these samples have been studied by energy filtered transmission electron microscopy. It will be shown that for annealing temperatures lower than 1000 °C, only amorphous Si nanoclusters are present. We demonstrate that a large density of small amorphous Si clusters produces the best luminescence performance and enhances the fraction of optically active Er. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
78.66.Nk Insulators

Band gap of GaAs1−xBix, 0<x<3.6%

S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, and T. Tiedje

Appl. Phys. Lett. 82, 3874 (2003); http://dx.doi.org/10.1063/1.1581983 (3 pages) | Cited 77 times

Online Publication Date: 27 May 2003

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The band gap of GaAsBi epitaxial layers as a function of bismuth concentration up to 3.6% is determined. The optical transitions were measured by modulated electroreflectance. The energy of the band gap decreases at a linearized rate of 88 meV/% Bi, or 83 meV/% Bi for the heavy hole to conduction band transition for GaAsBi strained to GaAs. The valence-band splitting increases faster than that of GaAs under similar compressive strain whereas the temperature dependence of the observed GaAsBi transitions is similar to that of GaAs. © 2003 American Institute of Physics.
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71.20.Nr Semiconductor compounds
81.05.Ea III-V semiconductors
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.20.Jq Electro-optical effects

Visible photoluminescence in amorphous SiOx thin films prepared by silicon evaporation under a molecular oxygen atmosphere

M. Molinari, H. Rinnert, and M. Vergnat

Appl. Phys. Lett. 82, 3877 (2003); http://dx.doi.org/10.1063/1.1578710 (3 pages) | Cited 20 times

Online Publication Date: 27 May 2003

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A simple reactive evaporation method is proposed to prepare light-emitting amorphous SiOx thin films. By evaporating pure silicon in a controlled molecular oxygen atmosphere, it is possible to obtain a very large composition range. By changing the pressure in the preparation chamber, x can be varied from 0.7 to 1.85. The composition and the structure of the films were investigated using energy dispersive x-ray, infrared absorption and x-ray photoelectron spectroscopies. The samples contain amorphous silicon clusters dispersed inside an insulating silicon oxide matrix. The room-temperature photoluminescence properties were then measured. By conveniently choosing the oxygen pressure, the as-deposited films exhibit visible photoluminescence without any annealing post-treatments. The luminescence intensity initially increases with excess silicon concentration and then disappears for a too-high silicon excess. The above effect is interpreted in terms of confinement of the amorphous silicon clusters in the insulating matrix. © 2003 American Institute of Physics.
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78.55.Qr Amorphous materials; glasses and other disordered solids
78.66.Jg Amorphous semiconductors; glasses
68.55.Nq Composition and phase identification
61.43.Er Other amorphous solids
81.15.Kk Vapor phase epitaxy; growth from vapor phase
79.60.Ht Disordered structures
78.35.+c Brillouin and Rayleigh scattering; other light scattering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Void nucleation in thin HfO2 layer on Si

Noriyuki Miyata, Toshihide Nabatame, Tsuyoshi Horikawa, Masakazu Ichikawa, and Akira Toriumi

Appl. Phys. Lett. 82, 3880 (2003); http://dx.doi.org/10.1063/1.1581006 (3 pages) | Cited 18 times

Online Publication Date: 27 May 2003

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We examined void nucleation in a thin HfO2 film on Si at 820–920 °C in an ultrahigh vacuum. The clustering of mobile species on the HfO2 surface led to the opening of micron-scale voids containing Hf silicide. The incubation period observed for void nucleation exhibited transition of decomposition process with activation energies of 2.3 eV (<890 °C) and 11 eV (>890 °C). We propose that the former energy corresponds to the creation of mobile species and the latter to the decomposition of the HfO2 film under the cluster. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Qq Microscopic defects (voids, inclusions, etc.)
68.60.Dv Thermal stability; thermal effects

Observation of self-organized superlattice in AlGaInAsSb pentanary alloys

D. H. Jaw, J. R. Chang, and Y. K. Su

Appl. Phys. Lett. 82, 3883 (2003); http://dx.doi.org/10.1063/1.1581979 (3 pages) | Cited 3 times

Online Publication Date: 27 May 2003

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An unexpected self-organized superlattice structure has been observed in the AlGaInAsSb pentanary alloys grown by metalorganic vapor-phase epitaxy. The samples were studied by transmission electron microscopy, double-crystal x-ray diffraction, and secondary ion mass spectrometry measurements. The modulation strength and period of the self-organized superlattice are correlated to the alloy composition. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
81.05.Ea III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
61.05.cp X-ray diffraction
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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